Search Results - "Khairi, M. Azim"

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  1. 1

    The effects of electron irradiation and thermal dependence measurements on 4H-SiC Schottky diode by Ganiyev, Sabuhi, Azim Khairi, M., Ahmad Fauzi, D., Abdullah, Yusof, Hasbullah, N. F.

    Published in Semiconductors (Woodbury, N.Y.) (01-12-2017)
    “…In this paper the effects of high energy (3.0 MeV) electrons irradiation over a dose ranges from 6 to 15 MGy at elevated temperatures 298 to 448 K on the…”
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    Journal Article
  2. 2

    The impact of scaling on single event upset in 6T and 12T SRAMs from 130 to 22 nm CMOS technology by Yusop, N. S., Nordin, A. N., Khairi, M. Azim, Hasbullah, N. F.

    Published in Radiation effects and defects in solids (02-12-2018)
    “…As transistor sizes scale down to nanometres dimensions, CMOS circuits become more sensitive to radiation. High-performance static random access memory (SRAM)…”
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    Journal Article
  3. 3

    Reliability Study of Silicon Carbide Schottky Diode with Fast Electron Irradiation by Khairi, M. Azim, Rahim, Rosminazuin Ab, Saidin, Norazlina, Hasbullah, N. F., Abdullah, Yusof

    “…The impact of fast electron exposure upon the performance of commercial silicon carbide Schottky diodes has been studied. Under 3 MeV electrons, absorbed dose…”
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    Conference Proceeding