Search Results - "Ketteniss, N."

Polarization-Engineered Enhancement-Mode High-Electron-Mobility Transistors Using Quaternary AlInGaN Barrier Layers by Reuters, Benjamin, Wille, A., Ketteniss, N., Hahn, H., Holländer, B., Heuken, M., Kalisch, H., Vescan, A.

“…Group III nitride heterostructures with low polarization difference recently moved into the focus of research for realization of enhancement-mode (e-mode)…”
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Growth Studies on Quaternary AlInGaN Layers for HEMT Application by Reuters, Benjamin, Wille, A., Holländer, B., Sakalauskas, E., Ketteniss, N., Mauder, C., Goldhahn, R., Heuken, M., Kalisch, H., Vescan, A.

“…Quaternary barrier layers for GaN-based high-electron-mobility transistors (HEMT) have recently been a focus of interest because of the possible…”
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InAlN/GaN HEMTs on Sapphire Substrate With 2.9-W/mm Output Power Density at 18 GHz by Lecourt, F., Ketteniss, N., Behmenburg, H., Defrance, N., Hoel, V., Eickelkamp, M., Vescan, A., Giesen, C., Heuken, M., De Jaeger, J.-C

“…In this letter, small- and large-signal measurements of an In 0.15 Al 0.82 N/AlN/GaN high-electron-mobility transistor (HEMT) grown on a sapphire substrate…”
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Oxygen addition to fluorine based SiN etch process: Impact on the electrical properties of AlGaN/GaN 2DEG and transistor characteristics by Hahn, H., Achenbach, J., Ketteniss, N., Noculak, A., Kalisch, H., Vescan, A.

“…► We investigate consequences using CF 4/O 2 or CF 4 dry etches for gate trench opening. ► Oxygen addition reduces the incorporation of fluorine ions. ► We…”
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Quaternary Enhancement-Mode HFET With In Situ SiN Passivation by Ketteniss, N., Behmenburg, H., Hahn, H., Noculak, A., Hollander, B., Kalisch, H., Heuken, M., Vescan, A.

“…A lattice-matched InAlGaN/GaN heterostructure with a barrier-layer thickness of 4 nm has been grown and passivated in situ with a 63-nm SiN by metal-organic…”
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The role of strain in controlling the surface morphology of AlxGa1−xN following in situ treatment with SiH4 and NH3 by Ketteniss, N., Oliver, R.A., McAleese, C., Kappers, M.J., Zhang, Y., Humphreys, C.J.

“…Treatment of GaN with SiH4 and NH3 increases the size of surface pits associated with threading dislocations, allowing them to be easily imaged by atomic force…”
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Processing and characterization of recessed-gate AlGaN/GaN HFETs by Kettenib, N., Eickelkamp, M., Noculak, A., Jansen, R.H., Vescan, A.

“…AlGaN/GaN heterostructure field effect transistors with different gate recess depths have been fabricated using an ICP etch process. Subsequently, electrical…”
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The role of strain in controlling the surface morphology of Al x Ga 1− x N following in situ treatment with SiH 4 and NH 3 by Ketteniss, N., Oliver, R.A., McAleese, C., Kappers, M.J., Zhang, Y., Humphreys, C.J.

“…Treatment of GaN with SiH 4 and NH 3 increases the size of surface pits associated with threading dislocations, allowing them to be easily imaged by atomic…”
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Quaternary nitride enhancement mode HFET with 260 mS/mm and a threshold voltage of +0.5 V by Ketteniss, N., Reuters, B., Hollander, B., Hahn, H., Kalisch, H., Vescan, A.

“…A new approach for the heterostructure design following the idea to reduce the interface charge itself by applying a quaternary barrier layer with rather low…”
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75-nm-T-shaped-gate InAlN/AlN/GaN HEMT on sapphire with 100 GHz cutoff frequency by Lecourt, F., Defrance, N., Hoel, V., De Jaeger, J-C, Ketteniss, N., Behmenburg, H., Eickelkamp, M., Vescan, A., Giesen, C., Heuken, M.

“…This paper reports on DC and RF performances of an In 0.15 Al 0.85 N/AlN/GaN high electron mobility transistor (HEMT) on sapphire substrate with a…”
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