Search Results - "Kenzhaev, Z. T."

Optimal Conditions for Nickel Doping to Improve the Efficiency of Silicon Photoelectric Cells by Bakhadyrkhanov, M. K., Kenzhaev, Z. T.

“…The stability of a nickel-enriched silicon surface layer against thermal treatment has been studied. It has been shown that the surface layer persists at…”
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Radiation Stability of Nickel Doped Solar Cells by Ismailov, K. A., Kenzhaev, Z. T., Koveshnikov, S. V., Kosbergenov, E. Zh, Ismaylov, B. K.

“…The effect of doping with nickel on the radiation stability of silicon solar cells has been studied within a γ-radiation dose range of 10 5 –10 8 rad. It has…”
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Clusters of impurity nickel atoms and their migration in the crystal lattice of silicon by Ismaylov, B. K., Zikrillayev, N. F., Ismailov, K. A., Kenzhaev, Z. T.

“…The formation of clusters of impurity atoms in the crystal lattice of semiconductor materials is of great interest. The formation of nanoclusters with…”
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Formation of Complexes of Phosphorus and Boron Impurity Atoms in Silicon by Bakhadyrkhanov, M. K., Kenzhaev, Z. T., Koveshnikov, S. V., Usmonov, A. A., Mavlonov, G. Kh

“…— We have studied the effect of high phosphorus concentration on the diffusion of boron impurity atoms in silicon and, vice versa, the effect of boron on…”
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Enhancing the Efficiency of Silicon Solar Cells through Nickel Doping by Kenzhaev, Z. T., Zikrillaev, N. F., Ayupov, K. S., Ismailov, K. A., Koveshnikov, S. V., Ismailov, T. B.

“…It was demonstrated that the concentration of nickel atoms near the surface of solar cells (SCs) is higher by 2–3 orders of magnitude in comparison with the…”
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Codiffusion of Gallium and Phosphorus Atoms in Silicon by Zikrillaev, N. F., Isamov, S. B., Koveshnikov, S. V., Kenzhaev, Z. T., Turekeev, Kh. S.

“…It has been found that the gas-phase diffusion of gallium and phosphorus atoms into silicon provides not only the compensation but also partial interaction of…”
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Influence of Nickel Impurity on the Operating Parameters of a Silicon Solar Cell by Kenzhaev, Z. T., Zikrillaev, N. F., Odzhaev, V. B., Ismailov, K. A., Prosolovich, V. S., Zikrillaev, Kh. F., Koveshnikov, S. V.

“…The research results present the influence of nickel impurities introduced by diffusion into monocrystalline silicon on the characteristics of solar cells…”
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Studying the Effect of Doping with Nickel on Silicon-Based Solar Cells with a Deep p–n-Junction by Bakhadyrkhanov, M. K., Isamov, S. B., Kenzhaev, Z. T., Koveshnikov, S. V.

“…It has been shown that the doping of the front side of a solar cell with a deep-level p – n junction with nickel atoms increases short-circuit current density…”
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Silicon Photovoltaic Cells with Deep p–n-Junction by Bakhadyrkhanov, M. K., Isamov, S. B., Kenzhaev, Z. T., Melebaev, D., Zikrillayev, Kh. F., Ikhtiyarova, G. A.

“…By the diffusion obtained the Si 〈B, P〉 (group I) and Si 〈B, P + Ni〉 (group II) structures with deep p – n -junctions. It is demonstrated that the parameters…”
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Physical mechanism of gettering of impurity Ni atom clusters in Si lattice by Ismaylov, B.K., Zikrillayev, N.F., Ismailov, K.A., Kenzhaev, Z.T.

“…This article presents the gettering mechanism and the physical model of impurity Ni atom clusters in the Si crystal lattice. The study finds out that the…”
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