Search Results - "Kenyon, J. A."
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Light-activated resistance switching in SiOx RRAM devices
Published in Applied physics letters (04-12-2017)“…We report a study of light-activated resistance switching in silicon oxide (SiOx) resistive random access memory (RRAM) devices. Our devices had an indium tin…”
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Committee machines—a universal method to deal with non-idealities in memristor-based neural networks
Published in Nature communications (26-08-2020)“…Artificial neural networks are notoriously power- and time-consuming when implemented on conventional von Neumann computing systems. Consequently, recent years…”
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Quantum Conductance in Silicon Oxide Resistive Memory Devices
Published in Scientific reports (19-09-2013)“…Resistive switching offers a promising route to universal electronic memory, potentially replacing current technologies that are approaching their fundamental…”
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Brain-inspired computing needs a master plan
Published in Nature (London) (14-04-2022)“…New computing technologies inspired by the brain promise fundamentally different ways to process information with extreme energy efficiency and the ability to…”
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The interaction of gold and silver nanoparticles with a range of anionic and cationic dyes
Published in Physical chemistry chemical physics : PCCP (07-04-2014)“…We describe the synthesis of charge-stabilised gold and silver nanoparticles by a modified Turkevich method and their interaction with a selection of cationic…”
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Probing electrochemistry at the nanoscale: in situ TEM and STM characterizations of conducting filaments in memristive devices
Published in Journal of electroceramics (01-12-2017)“…Memristors or memristive devices are two-terminal nanoionic systems whose resistance switching effects are induced by ion transport and redox reactions in…”
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Selenium (IV,VI) reduction and tolerance by fungi in an oxic environment
Published in Geobiology (01-05-2017)“…Microbial processes are known to mediate selenium (Se) oxidation–reduction reactions, strongly influencing Se speciation, bioavailability, and transport…”
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Modification of erbium photoluminescence decay rate due to ITO layers on thin films of SiO2:Er doped with Si-nanoclusters
Published in Journal of luminescence (01-04-2013)“…During the fabrication of MOS light emitting devices, the thin film of active material is usually characterized by photoluminescence measurements before…”
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Time-correlated single-photon counting study of multiple photoluminescence lifetime components of silicon nanoclusters
Published in Journal of luminescence (01-04-2013)“…We report time-resolved photoluminescence measurements of thin films of silica containing silicon nanoclusters (Si NCs), produced by PECVD and annealed at…”
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10
Investigation of quartz grain surface textures by atomic force microscopy for forensic analysis
Published in Forensic science international (30-11-2012)“…Abstract This paper presents a study of quartz sand grain surface textures using atomic force microscopy (AFM) to image the surface. Until now scanning…”
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11
Losses in luminescent solar concentrators unveiled
Published in Solar energy materials and solar cells (01-01-2016)“…A novel experimental method is presented to determine the optical efficiency and the loss channels of a luminescent solar concentrator (LSC). Despite strong…”
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Re‐Evaluating Hydrogen Sulfide as a Sink for Cadmium and Zinc in the Oxic to Suboxic Upper Water Column of the Pacific Ocean
Published in Global biogeochemical cycles (01-03-2024)“…Hydrogen sulfide is produced by heterotrophic bacteria in anoxic waters and via carbonyl sulfide hydrolysis and phytoplankton emissions under oxic conditions…”
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Simulation of Cycle-to-Cycle Instabilities in SiO } -Based ReRAM Devices Using a Self-Correlated Process With Long-Term Variation
Published in IEEE electron device letters (01-01-2019)“…Cycle-to-cycle (C2C) current variability occurring in ReRAM devices is not only a stochastic feature inherent to electron transport in low-dimensional…”
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Evidence of energy coupling between Si nanocrystals and Er3+ in ion-implanted silica thin films
Published in Applied physics letters (04-10-1999)“…Silica thin films containing Si nanocrystals and Er3+ were prepared by ion implantation. Excess Si concentrations ranged from 5% to 15%; Er3+ concentration for…”
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Retention of data in heat-damaged SIM cards and potential recovery methods
Published in Forensic science international (02-05-2008)“…Abstract Examination of various SIM cards and smart card devices indicates that data may be retained in SIM card memory structures even after heating to…”
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Intrinsic Resistance Switching in Amorphous Silicon Suboxides: The Role of Columnar Microstructure
Published in Scientific reports (24-08-2017)“…We studied intrinsic resistance switching behaviour in sputter-deposited amorphous silicon suboxide (a-SiO x ) films with varying degrees of roughness at the…”
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The nature of column boundaries in micro-structured silicon oxide nanolayers
Published in APL materials (01-12-2021)“…Columnar microstructures are critical for obtaining good resistance switching properties in SiOx resistive random access memory (ReRAM) devices. In this work,…”
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Multi-channel conduction in redox-based resistive switch modelled using quantum point contact theory
Published in Applied physics letters (25-11-2013)“…A simple analytic model for the electron transport through filamentary-type structures in Si-rich silica (SiOx)-based resistive switches is proposed. The model…”
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Quantum confinement in rare-earth doped semiconductor systems
Published in Current opinion in solid state & materials science (01-04-2003)“…Rare-earth doped materials are widely deployed in optoelectronics and optical telecommunications technology, despite the difficulties associated with doping…”
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Towards population inversion of electrically pumped Er ions sensitized by Si nanoclusters
Published in Optics express (01-02-2010)“…This study reports the estimation of the inverted Er fraction in a system of Er doped silicon oxide sensitized by Si nanoclusters, made by magnetron…”
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