Search Results - "Kent, Thomas F"

Semiconductor Nanowire Light-Emitting Diodes Grown on Metal: A Direction Toward Large-Scale Fabrication of Nanowire Devices by Sarwar, ATM Golam, Carnevale, Santino D., Yang, Fan, Kent, Thomas F., Jamison, John J., McComb, David W., Myers, Roberto C.

“…Bottom‐up nanowires are attractive for realizing semiconductor devices with extreme heterostructures because strain relaxation through the nanowire sidewalls…”
Get full text

GdN Nanoisland-Based GaN Tunnel Junctions by Krishnamoorthy, Sriram, Kent, Thomas F, Yang, Jing, Park, Pil Sung, Myers, Roberto C, Rajan, Siddharth

“…Tunnel junctions could have a great impact on gallium nitride and aluminum nitride-based devices such as light-emitting diodes and lasers by overcoming…”
Get full text

Polarization-Induced pn Diodes in Wide-Band-Gap Nanowires with Ultraviolet Electroluminescence by Carnevale, Santino D, Kent, Thomas F, Phillips, Patrick J, Mills, Michael J, Rajan, Siddharth, Myers, Roberto C

“…Almost all electronic devices utilize a pn junction formed by random doping of donor and acceptor impurity atoms. We developed a fundamentally new type of pn…”
Get full text

Mixed Polarity in Polarization-Induced p–n Junction Nanowire Light-Emitting Diodes by Carnevale, Santino D, Kent, Thomas F, Phillips, Patrick J, Sarwar, A. T. M. G, Selcu, Camelia, Klie, Robert F, Myers, Roberto C

“…Polarization-induced nanowire light emitting diodes (PINLEDs) are fabricated by grading the Al composition along the c-direction of AlGaN nanowires grown on Si…”
Get full text

Anisotropic defect-induced ferromagnetism and transport in Gd-doped GaN two-dimensional electron gasses by Yang, Zihao, Kent, Thomas F., Yang, Jing, Jin, Hyungyu, Heremans, Joseph P., Myers, Roberto C.

Get full text

Tuning the polarization-induced free hole density in nanowires graded from GaN to AlN by Golam Sarwar, A. T. M., Carnevale, Santino D., Kent, Thomas F., Yang, Fan, McComb, David W., Myers, Roberto C.

“…We report a systematic study of p-type polarization-induced doping in graded AlGaN nanowire light emitting diodes grown on silicon wafers by plasma-assisted…”
Get full text

Molecular beam epitaxy of InN nanowires on Si by Golam Sarwar, A.T.M., Carnevale, Santino D., Kent, Thomas F., Laskar, Masihhur R., May, Brelon J., Myers, Roberto C.

“…We report on a systematic growth study of the nucleation process of InN nanowires on Si(111) substrates using plasma assisted molecular beam epitaxy (PAMBE)…”
Get full text

A note on the enumeration degrees of 1-generic sets by Badillo, Liliana, Bianchini, Caterina, Ganchev, Hristo, Kent, Thomas F., Sorbi, Andrea

“…We show that every nonzero Δ 2 0 enumeration degree bounds the enumeration degree of a 1-generic set. We also point out that the enumeration degrees of…”
Get full text

Bounding nonsplitting enumeration degrees by Kent, Thomas F., Sorbi, Andrea

“…We show that every nonzero $\Sigma _{2}^{0}$ enumeration degree bounds a nonsplitting nonzero enumeration degree…”
Get full text

Branching in the -enumeration degrees: a new perspective by Affatato, Maria L., Kent, Thomas F., Sorbi, Andrea

“…We give an alternative and more informative proof that every incomplete -enumeration degree is the meet of two incomparable -degrees, which allows us to show…”
Get full text

Self-assembled InN micro-mushrooms by upside-down pendeoepitaxy by Sarwar, A.T.M. Golam, Yang, Fan, Esser, Bryan D., Kent, Thomas F., McComb, David W., Myers, Roberto C.

“…Self-assembly of hexagonal InN micro-mushrooms on Si (111) substrates by molecular beam epitaxy is reported. Scanning electron microscopy (SEM) reveals…”
Get full text

INTERPRETING TRUE ARITHMETIC IN THE$\Delta _{2}^{0}\text{-ENUMERATION}$DEGREES by KENT, THOMAS F.

“…We show that there is a first order sentence φ(x; a, b, l) such that for every computable partial order $\scr{P}$ and $\Delta _{2}^{0}\text{-degree}$ u > 0 e ,…”
Get full text

Interpreting true arithmetic in the -enumeration degrees by Kent, Thomas F.

“…We show that there is a first order sentence φ( x: a, b, l ) such that for every computable partial order and -degree u > 0 e , there are -enumeration degrees…”
Get full text

The structure of the s -degrees contained within a single e -degree by Kent, Thomas F.

“…For any enumeration degree a let D a s be the set of s -degrees contained in a . We answer an open question of Watson by showing that if a is a nontrivial Σ 2…”
Get full text

Atomically sharp 318 nm Gd:AlGaN ultraviolet light emitting diodes on Si with low threshold voltage by Kent, Thomas F., Carnevale, Santino D., Myers, Roberto C.

“…Self-assembled AlxGa1–xN polarization-induced nanowire light emitting diodes (PINLEDs) with Gd-doped AlN active regions are prepared by plasma-assisted…”
Get full text

Interpreting true arithmetic in the Δ02-enumeration degrees by Kent, Thomas F

“…We show that there is a first order sentence φ(x; a, b, l) such that for every computable partial order 𝒫 and Δ02-degree u > 0e, there are Δ02-enumeration…”
Get full text

The Π3-theory of the -enumeration degrees is undecidable by Kent, Thomas F.

Get full text

The Π 3 -theory of the -enumeration degrees is undecidable by Kent, Thomas F.

“…We show that in the language of { ≤ }. the Π 3 -fragment of the first order theory of the -enumeration degrees is undecidable. We then extend this result to…”
Get full text

The Π₃-Theory of the$\Sigma _{2}^{0}$-Enumeration Degrees Is Undecidable by Kent, Thomas F.

“…We show that in the language of {≤}, the Π₃-fragment of the first order theory of the $\Sigma _{2}^{0}$-enumeration degrees is undecidable. We then extend this…”
Get full text

Empty intervals in the enumeration degrees by Kent, Thomas F., Lewis, Andrew E.M., Sorbi, Andrea

“…We construct a Π20 enumeration degree which is a strong minimal cover. ► There is a Π20 enumeration degree which is a strong minimal cover. ► This is the best…”
Get full text