Search Results - "Kennedy, Gary P"

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  1. 1

    Modification of Electrical Properties of Graphene by Substrate-Induced Nanomodulation by Lee, Jong-Kwon, Yamazaki, Shiro, Yun, Hoyeol, Park, Jinwoo, Kennedy, Gary P, Kim, Gyu-Tae, Pietzsch, Oswald, Wiesendanger, Roland, Lee, SangWook, Hong, Suklyun, Dettlaff-Weglikowska, Urszula, Roth, Siegmar

    Published in Nano letters (14-08-2013)
    “…A periodically modulated graphene (PMG) generated by nanopatterned surfaces is reported to profoundly modify the intrinsic electronic properties of graphene…”
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    Journal Article
  2. 2

    Effect of Intertube Junctions on the Thermoelectric Power of Monodispersed Single Walled Carbon Nanotube Networks by Piao, Mingxing, Joo, Min-Kyu, Na, Junhong, Kim, Yun-Jeong, Mouis, Mireille, Ghibaudo, Gérard, Roth, Siegmar, Kim, Wung-Yeon, Jang, Ho-Kyun, Kennedy, Gary P, Dettlaff-Weglikowska, Urszula, Kim, Gyu-Tae

    Published in Journal of physical chemistry. C (20-11-2014)
    “…The thermoelectric power (TEP) of single walled carbon nanotube (SWCNT) thin films in pure metallic SWCNT (m-SWCNT) and pure semiconducting SWCNT (s-SWCNT)…”
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    Journal Article
  3. 3

    Preparation and characterization of expanded graphite polymer composite films for thermoelectric applications by Piao, Mingxing, Kim, Gyutae, Kennedy, Gary P., Roth, Siegmar, Dettlaff-Weglikowska, Urszula

    “…This report demonstrates application of expanded graphite (ExG) for thermoelectric energy conversion, where it serves as a filler for both p‐ and n‐type…”
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    Journal Article
  4. 4

    Increasing the thermoelectric power generated by composite films using chemically functionalized single-walled carbon nanotubes by Piao, Mingxing, Na, Junhong, Choi, Jaewan, Kim, Jaesung, Kennedy, Gary P., Kim, Gyutae, Roth, Siegmar, Dettlaff-Weglikowska, Urszula

    Published in Carbon (New York) (01-10-2013)
    “…We prepared and characterized flexible thermoelectric (TE) materials based on thin films of single-walled carbon nanotube (SWCNT) composites with…”
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    Journal Article
  5. 5

    Thermoelectric properties of single walled carbon nanotube networks in polycarbonate matrix by Piao, Mingxing, Kim, Gyutae, Kennedy, Gary P., Roth, Siegmar, Dettlaff-Weglikowska, Urszula

    “…We report on single walled carbon nanotubes (SWCNTs) used as a filler material for polycarbonate (PC) composites in this paper. Thin flexible composite films…”
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    Journal Article
  6. 6

    Chemical functionalization of multi-walled carbon nanotubes by coating with titanium by Dettlaff-Weglikowska, Urszula, Koizhaiganova, Raushan, Piao, Minxing, Kim, Do-Hyun, Kennedy, Gary P., Glanz, Carsten, Kolaric, Ivica, Roth, Siegmar

    Published in physica status solidi (b) (01-12-2012)
    “…In this study, we investigated the effect of coating multi‐walled carbon nanotubes (MWNTs) with titanium using chemical vapor deposition. This coating process…”
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    Journal Article
  7. 7

    An 11.5 GHz Cascode VCO with Low Phase Noise in InGaP/GaAs HBT Technology by Shrestha, Bhanu, Kennedy, Gary P, Kim, Nam-Young

    Published in Technical review - IETE (01-03-2007)
    “…A MMIC cascode VCO is designed, fabricated, and characterized for an X-band Low Noise Block(LNB) system using InGaP/GaAs HBT technology. A phase noise of…”
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    Journal Article
  8. 8

    Structural analysis of silicon dioxide and silicon oxynitride films produced using an oxygen plasma by Buiu, O., Kennedy, G.P., Gartner, M., Taylor, S.

    Published in IEEE transactions on plasma science (01-12-1998)
    “…Plasma grown silicon dioxide and oxynitride layers are shown to represent, for microelectronic applications, a good alternative method to conventional…”
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    Journal Article
  9. 9
  10. 10

    Optimized phase noise of LC VCO using an asymmetric-inductance tank in InGaP/GaAs HBT technology by Yoon, Jae-Ho, Lee, Sang-Hun, Koh, Ah-Rah, Kennedy, Gary P., Kim, Nam-Young

    Published in Microwave and optical technology letters (01-06-2006)
    “…This paper describes fully integrated low‐phase‐noise MMIC voltage‐controlled oscillators (VCOs) for an adaptive‐feedback interference‐cancellation system…”
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    Journal Article
  11. 11

    A Novel Harmonic Noise Frequency Filtering VCO for Optimizing Phase Noise by Jae-Ho Yoon, Sang-Hun Lee, Ah-Rah Koh, Bhanu Shrestha, Sang-Hoon Cheon, Kennedy, G.P., Nam-Young Kim

    “…InGaP/GaAs HBT LC-VCOs designed with and without the proposed harmonic noise frequency filtering (HNFF) technique are presented here. To optimize phase noise,…”
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    Conference Proceeding
  12. 12

    A high linearity InGaP/GaAs HBT up-conversion double balanced mixer with common base drive stage by Se-Hwan Kim, Sang-Hun Lee, Shrestha, B., Sun-jin Kim, Kennedy, G.P., Nam-Young Kim, Sang-Hoon Cheon

    “…A high linearity double balanced mixer has been developed using InGaP/GaAs HBT technology. Features of the design include a common base drive stage and a…”
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    Conference Proceeding
  13. 13

    Circuit techniques to improve the linearity of an up-conversion double balanced mixer with an active balun using InGaP/GaAs HBT technology by Rok-Hee Lee, Jae-Young Lee, Sang-Hun Lee, Shrestha, B., Sun-Jin Kim, Kennedy, G.P., Chan Hyeong Park, Nam-Young Kim, Sang-Hoon Cheon

    “…This paper describes two circuit techniques to improve the linearity of an up-conversion double balanced mixer (DBM). These techniques are optimized for…”
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    Conference Proceeding
  14. 14

    A comparative analysis of differential LC VCOs with different tank structures in InGaP/GaAs HBT technology by Jae-Ho Yoon, Sang-Hun Lee, Ah-Rah Koh, Shrestha, B., Sun-Jin Kim, Sang-Hoon Cheon, Kennedy, G.P., Nam-Young Kim

    “…InGaP/GaAs HBT differential LC VCOs designed with low current consumption and low phase noise performance are presented here. To this end, the two types of…”
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    Conference Proceeding
  15. 15

    Design of an MMIC broadband mixer with high output power using InGaP/GaAs HBT technology by Young-Ho Lee, Sang-Hun Lee, Jeiyoung Lee, Deok-Soo Park, Sang-Hoon Cheon, Bhanu Shrestha, Sun-Jin Kim, Kennedy, G.P., Nam-Young Kim

    “…In this paper, an InGaP/GaAs HBT MMIC broadband mixer with high output power is designed within a total chip area of 2.3 /spl times/ 0.85 mm/sup 2/. The…”
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    Conference Proceeding