Search Results - "Keng Foo Lo"

Correlation between Charge Pumping Method and Direct-Current Current Voltage Method in p-Type Metal-Oxide-Semiconductor Field-Effect Transistors by Jie, Bin-Bin, Ng, Kok-Hooi, Lo, Ming-FuLi

“…In this study, the correlation between the charge pumping (CP) method and the direct-current current voltage (DCIV) method in p-type metal-oxide-semiconductor…”
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Massively parallel GOI test by Tze Kiong Ng, Keng Foo Lo, Jie, B., Andrew, Y.

“…Massively parallel GOI (gate oxide integrity) Vramp tests offer a fast method, capable of testing 6 test structures on a single touchdown of the probe card…”
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Wafer level electromigration testing on via/line structure with a poly-heated method in comparison to standard package level tests by Hin-Kiong Yap, Kin-Leong Yap, Yew-Chee Tan, Keng-Foo Lo

“…In this study, we present data from alternative wafer level EM technique, poly-heated electromigration test on via chain structure. We show that there is a…”
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Step like degradation profile of electromigration of W-plug contact by Guo Qiang, Lo Keng Foo, Zeng Xu, Neo Soh Ping, Yao Pei, Oh Chong Khiam

“…The electromigration (EM) of a W-plug contact to silicon has been investigated by high resolution resistance measurement (HRRM). Step-like resistance…”
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Wafer-level electromigration reliability test for deep-submicron interconnect metallization by Loh, Wye Boon, Tse, Man Siu, Chan, Lap, Eo, Keng Foo

“…An automatic Wafer-level Electromigration Test (WET) System with interactive interface was developed. The WET System has the advantages of reduced stressing…”
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Gate oxide integrity improvement by optimising poly deposition process by Tze Kiong Ng, Yap, A., Keng Foo Lo, Poh Chuan Ang

“…The gate oxide integrity of oxide thickness 13.5 nm has been studied for different amorphous poly deposition conditions. The poly grain was varied by the poly…”
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The study of sputtered RF Ta on the PID in Cu dual damascene technology [plasma induced damage] by Wen Hui Lu, Kim Keng Teo, Chaw Sing Ho, Andrew, K.L.Y., Keng Foo Lo

“…Different recipes of barrier metal using a sputtered Ta process in 0.13 /spl mu/m dual gate oxide are developed. Low-throughput RF Ta, baseline Ta and…”
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Studies on X-ray reflectivity technique and application in thickness measurements in wafer fabrication by Ramesh Rao, N., Hua Younan, Li Kun, Lo Keng Foo

“…In advanced ULSI technologies, 90nm and beyond, ultra-thin materials play a key role in device performance and its reliability. Conventional optical…”
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Failure analysis of bondpads peeling problem in 0.13 /spl mu/m copper process in wafer fabrication by Hua Younan, Rao, N.R., Tan Chin Wang, Lo Keng Foo

“…A bondpad peeling case due to passivation residue is presented for 0.13 /spl mu/m copper process in wafer fabrication (fab). It was reported that some dies…”
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A latch-up immunized lateral trench-gate conductivity modulated power transistor by Jun Cai, Keng Foo Lo, Sin, J.K.O.

“…In this paper, a latch-up immunized lateral trench-gate bipolar transistor (LTGBT) is presented, along with its numerical simulations and experimental results…”
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A study on surface charging reduction in Auger electron spectroscopy by Ramesh Rao, N., Tan Chin Wang, Hua Younan, Lo Keng Foo

“…In this paper, a simple method of charge reduction on the surface of an insulating sample and its usefulness in the analysis of Auger electron spectroscopy…”
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Applications of XRD and TOF-SIMS in failure analysis of SiGe epi wafer by Ramesh Rao, N., Hua Younan, Liu Jinping, Tan Boon Lay, Lo Keng Foo

“…In a BiCMOS process, interface quality of SiGe base region determines the performance of heterojunction bipolar transistor. At present, in wafer fabrication,…”
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Failure analysis of discolored and nonstick Al bondpad during wafer sorting process by Hua Younan, Ramesh Rao, N., Tan Chin Wang, Lo Keng Foo

“…In this paper, a discolored and nonstick bondpad case due to Si dust contamination is discussed. It was found that discoloration surrounded the probe mark…”
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Application of Auger electron spectroscopy (AES), TEM electron energy loss spectrum (EELS) in failure analysis on poly grooves issue in wafer fabrication by Phong Ooi Lin, Ang Ghim Boon, Chua Kok Keng, Oh Chong Khiam, Lo Keng Foo

“…In this paper, a case study on the failure analysis and yield enhancement on poly grooves/divots in wafer fabrication was investigated and studied. Several…”
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Effect of new processes of inter-layer-dielectric on plasma charging damage in 0.13/spl mu/ dual gate oxide by Wen Hui Lu, Lian Hoon Ko, Kin Leong Yap Andrew, Keng Foo Lo

“…New processes of Inter-Layer-Dielectric (ILD) in 0.13/spl mu/m dual gate oxide have been developed. Etch stop liner (ESL) changes from single stack SiN to dual…”
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A study of high current characteristics of devices in a 0.13µm CMOS technology by Tan, Pee-Ya, Manna, Indrajit, Tan, Yew-Chee, Lo, Keng-Foo, Li, Pian-Hong

“…This paper evaluates the high current performance of several devices in 0.13µm CMOS process as function of layout parameters using transmission line pulse…”
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Impact of test structure design on electromigration of metal interconnect by Guo Qiang, Lo Keng Foo, Zeng Xu, Yao Pei, Neo Soh Ping

“…The impact of test structure design on the electromigration (EM) lifetime of metal interconnects has been investigated using high resolution resistance…”
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Impact of failure criteria on electromigration of W-plug contact by Guo Qiang, Lo Keng Foo, Zeng Xu, Liu Xu, Yao Pei, Tan Pee Ya

“…This work presents an investigation of the impact of failure criteria on electromigration of a W-plug contact by using high resolution resistance measurement…”
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