Search Results - "Kempisty, J.J."

Diffusion barrier cladding in Si/SiGe resonant interband tunneling diodes and their patterned growth on PMOS source/drain regions by Niu Jin, Sung-Yong Chung, Rice, A.T., Berger, P.R., Thompson, P.E., Rivas, C., Lake, R., Sudirgo, S., Kempisty, J.J., Curanovic, B., Rommel, S.L., Hirschman, K.D., Kurinec, S.K., Chi, P.H., Simons, D.S.

“…Si/SiGe resonant interband tunnel diodes (RITDs) employing /spl delta/-doping spikes that demonstrate negative differential resistance (NDR) at room…”
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Role of fluorine in low temperature dopant activation of boron by Kempisty, J.J., Kurinec, S., Jain, A.

“…Summary form only given. MOS device scaling requires a decrease in lateral dimensions and in junction depths. Current projections call for junction depths in…”
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High performance cmos bulk technology using direct silicon bond (dsb) mixed crystal orientation substrates by Chun-Yung Sung, Haizhou Yin, Ng, H.Y., Saenger, K.L., Chan, V., Crowder, S.W., Jinghong Li, Ott, J.A., Bendernagel, R., Kempisty, J.J., Ku, V., Lee, H.K., Zhijiong Luo, Madan, A., Mo, R.T., Nguyen, P.Y., Pfeiffer, G., Raccioppo, M., Rovedo, N., Sadana, D., de Souza, J.P., Rong Zhang, Zhibin Ren, Wann, C.H.

“…High performance 65-nm technology (L poly =45nm, EOT=1.2nm) bulk CMOS has been demonstrated for the first time on mixed orientation substrates formed by using…”
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Integration of silicon-based tunnel diodes with CMOS: an RIT-OSU-NRL-NSF effort by Kempisty, J.J., Hirschman, K.D., Kurinec, S.K., Niu Jin, Sung-Yong Chung, Berger, P.R., Thompson, P.E.

“…Resonant tunneling diodes (RTDs) are promising band gap engineered heterostructures that exhibit a distinctive negative differential resistance (NDR) that can…”
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