Search Results - "Kemp, T W"

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  1. 1

    Maximizing the power of deep extragalactic imaging surveys with the James Webb Space Telescope by Kemp, T W, Dunlop, J S, McLure, R J, Schreiber, C, Carnall, A C, Cullen, F

    “…Abstract We present a new analysis of the potential power of deep, near-infrared, imaging surveys with the James Webb Space Telescope (JWST) to improve our…”
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    Journal Article
  2. 2

    Spectrum determination and modification of the AFRL Co-60 cell by Turinetti, J.R., Kemp, W.T., Chavez, J.R.

    Published in IEEE transactions on nuclear science (01-12-1998)
    “…The spectrum of a Co-60 facility includes more than the two photopeaks of gamma ray emission. If there is a large low energy contribution from scattering, dose…”
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    Journal Article
  3. 3

    Electron irradiation effects on photoconductive semiconductor switches (PCSSs) used in sub-nanosecond transient generators by Islam, N.E., Schamiloglu, E., Kirby, T.H., Shipley, B., Kemp, W.T., Schoenberg, J.S.H., Howard, J.W.

    Published in IEEE transactions on nuclear science (01-12-1999)
    “…Radiation-induced damage occurs in GaAs photoconductive semiconductor switches used in sub-nanosecond transient generators when subjected to 600 keV and 6 MeV…”
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    Journal Article
  4. 4

    Determination of low energy (<160 keV) X-ray spectra and verification of transport calculations through silicon by Turinetti, J.R., Critchfield, K.L., Chavez, J.R., Kemp, W.T., Bellem, R.D., Beutler, D.E.

    Published in IEEE transactions on nuclear science (01-12-1997)
    “…X-ray spectroscopy discrepancies at measured energies below 50 keV are shown through ITS detector response calculations to be caused by germanium K edge escape…”
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    Journal Article
  5. 5

    Maximising the power of deep extragalactic imaging surveys with the James Webb Space Telescope by Kemp, T. W, Dunlop, J. S, McLure, R. J, Schreiber, C, Carnall, A. C, Cullen, F

    Published 19-03-2019
    “…We present a new analysis of the potential power of deep, near-infrared, imaging surveys with the James Webb Space Telescope (JWST) to improve our knowledge of…”
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    Journal Article
  6. 6

    The effects of ionizing radiation on commercial power MOSFETs operated at cryogenic temperatures by Johnson, G.H., Kemp, W.T., Schrimpf, R.D., Galloway, K.F., Ackermann, M.R., Pugh, R.D.

    Published in IEEE transactions on nuclear science (01-12-1994)
    “…This is the first report of commercial n- and p-channel power MOSFETs exposed to ionizing radiation while operating in a cryogenic environment. The transistors…”
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    Journal Article Conference Proceeding
  7. 7

    Effects of Ar+ sputtering and thermal annealing on optical scatter from Si(100) and Si(111) by Cohen, M. R., Simonson, R. J., Altamirano, M. M., Critchfield, K. L., Kemp, W. T., Meinhardt, J. A.

    “…The applications of crystalline silicon in imaging detectors and other devices motivate an interest in the ‘‘macroscopic’’ optical properties of Si surfaces,…”
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    Conference Proceeding Journal Article
  8. 8

    Radiation Damage in MOS Transistors as a Function of the Angle between an Applied Electric Field and Various Incident Radiations (Protons, Electrons, and Co-60 Gamma Rays) by Tallon, R. W., Kemp, W. T., Ackermann, M. R., Owen, M. H., Hoffland, A. H.

    Published in IEEE transactions on nuclear science (01-12-1987)
    “…Data is presented which shows that ionizing radiation damage produced by 2 to 16 MeV protons in MOS transistors, with applied electrical fields across the gate…”
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    Journal Article
  9. 9

    A Comparison of Ionizing Radiation Damage in MOSFETs from Cobalt-60 Gamma Rays, 0.5 TO 22 MeV Protons and 1 to 7 MeV Electrons by Tallon, R. W., Ackermann, M. R., Kemp, W. T., Owen, M. H., Saunders, D. P.

    “…Non-radiation hardened P-channel and N-channel MOS transistors were irradiated with Co-60 gamma rays, 0.5 to 22 MeV protons, and 1 to 7 MeV electrons to…”
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    Journal Article
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    Total dose radiation response of CMOS compatible SOI MESFETs by Spann, J., Kushner, V., Thornton, T.J., Jinman Yang, Balijepalli, A., Barnaby, H.J., Xiao Jie Chen, Alexander, D., Kemp, W.T., Sampson, S.J., Wood, M.E.

    Published in IEEE transactions on nuclear science (01-12-2005)
    “…Metal semiconductor field effect transistors (MESFETs) have been fabricated using a silicon-on-insulator (SOI) CMOS process. The MESFETs make use of a TiSi/sub…”
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    Journal Article
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