Search Results - "Kelson, D"

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    beta -Ga2O3 MOSFETs for Radio Frequency Operation by Green, Andrew Joseph, Chabak, Kelson D., Baldini, Michele, Moser, Neil, Gilbert, Ryan, Fitch, Robert C., Wagner, Gunter, Galazka, Zbigniew, Mccandless, Jonathan, Crespo, Antonio, Leedy, Kevin, Jessen, Gregg H.

    Published in IEEE electron device letters (01-06-2017)
    “…We demonstrate a β-Ga 2 O 3 MOSFET with record-high transconductance (gm) of 21 mS/mm and extrinsic cutoff frequency (fT) and maximum oscillating frequency…”
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    Flexible Gallium Nitride for High‐Performance, Strainable Radio‐Frequency Devices by Glavin, Nicholas R., Chabak, Kelson D., Heller, Eric R., Moore, Elizabeth A., Prusnick, Timothy A., Maruyama, Benji, Walker, Dennis E., Dorsey, Donald L., Paduano, Qing, Snure, Michael

    Published in Advanced materials (Weinheim) (01-12-2017)
    “…Flexible gallium nitride (GaN) thin films can enable future strainable and conformal devices for transmission of radio‐frequency (RF) signals over large…”
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    Optimal Techniques in Two‐dimensional Spectroscopy: Background Subtraction for the 21st Century by Kelson, Daniel D.

    “…In two‐dimensional spectrographs, the optical distortions in the spatial and dispersion directions produce variations in the subpixel sampling of the…”
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    Donors and deep acceptors in β-Ga2O3 by Neal, Adam T., Mou, Shin, Rafique, Subrina, Zhao, Hongping, Ahmadi, Elaheh, Speck, James S., Stevens, Kevin T., Blevins, John D., Thomson, Darren B., Moser, Neil, Chabak, Kelson D., Jessen, Gregg H.

    Published in Applied physics letters (06-08-2018)
    “…We have studied the properties of Si, Ge shallow donors and Fe, Mg deep acceptors in β-Ga2O3 through temperature dependent van der Pauw and Hall effect…”
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    Confirmation of a Substantial Discrepancy between Radio and UV–IR Measures of the Star Formation Rate Density at 0.2 < z < 1.3 by Matthews, A. M., Kelson, D. D., Newman, A. B., Camilo, F., Condon, J. J., Cotton, W. D., Dickinson, M., Jarrett, T. H., Lacy, M.

    Published in The Astrophysical journal (01-05-2024)
    “…Abstract We present the initial sample of redshifts for 3839 galaxies in the MeerKAT DEEP2 field—the most sensitive ∼1.4 GHz radio field yet observed with σ n…”
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    Transient Thermal Management of a β-Ga₂O₃ MOSFET Using a Double-Side Diamond Cooling Approach by Kim, Samuel H., Shoemaker, Daniel, Green, Andrew J., Chabak, Kelson D., Liddy, Kyle J., Graham, Samuel, Choi, Sukwon

    Published in IEEE transactions on electron devices (01-04-2023)
    “…<inline-formula> <tex-math notation="LaTeX">\beta </tex-math></inline-formula>-phase gallium oxide (<inline-formula> <tex-math notation="LaTeX">\beta…”
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    Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition by Leedy, Kevin D., Chabak, Kelson D., Vasilyev, Vladimir, Look, David C., Boeckl, John J., Brown, Jeff L., Tetlak, Stephen E., Green, Andrew J., Moser, Neil A., Crespo, Antonio, Thomson, Darren B., Fitch, Robert C., McCandless, Jonathan P., Jessen, Gregg H.

    Published in Applied physics letters (03-07-2017)
    “…Si-doped Ga2O3 thin films were fabricated by pulsed laser deposition on semi-insulating (010) β-Ga2O3 and (0001) Al2O3 substrates. Films deposited on β-Ga2O3…”
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    Incomplete Ionization of a 110 meV Unintentional Donor in β-Ga2O3 and its Effect on Power Devices by Neal, Adam T., Mou, Shin, Lopez, Roberto, Li, Jian V., Thomson, Darren B., Chabak, Kelson D., Jessen, Gregg H.

    Published in Scientific reports (16-10-2017)
    “…Understanding the origin of unintentional doping in Ga 2 O 3 is key to increasing breakdown voltages of Ga 2 O 3 based power devices. Therefore, transport and…”
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    Late Bloomer Galaxies: Growing Up in Cosmic Autumn by Dressler, Alan, Kelson, Daniel D., E. Abramson, Louis

    Published in The Astrophysical journal (20-12-2018)
    “…Late bloomers (LBs) are massive ( ) galaxies at z < 1 that formed the majority of their stars within ∼2 Gyr of the epoch of observation. Our improved…”
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    LATIS: The Stellar Mass–Metallicity Relation of Star-forming Galaxies at z ∼ 2.5 by Chartab, Nima, Newman, Andrew B., Rudie, Gwen C., Blanc, Guillermo A., Kelson, Daniel D.

    Published in The Astrophysical journal (01-01-2024)
    “…Abstract We present the stellar mass–stellar metallicity relation for 3491 star-forming galaxies at 2 ≲ z ≲ 3 using rest-frame far-ultraviolet spectra from the…”
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    Constraints on Fluctuating Star Formation Rates for Intermediate-mass Galaxies with Hα and UV Luminosities by Patel, Shannon G., Kelson, Daniel D., Abramson, Louis E., Sattari, Zahra, Lorenz, Brian

    Published in The Astrophysical journal (01-03-2023)
    “…Abstract We study the recent star formation histories (SFHs) of 575 intermediate-mass galaxies (IMGs, 10 9 ≤ M / M ⊙ ≤ 10 10 ) in COSMOS at 0.3 < z < 0.4 by…”
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    ScAlN/GaN High-Electron-Mobility Transistors With 2.4-A/mm Current Density and 0.67-S/mm Transconductance by Green, Andrew J., Gillespie, James K., Fitch, Robert C., Walker, Dennis E., Lindquist, Miles, Crespo, Antonio, Brooks, Dan, Beam, Edward, Xie, Andy, Kumar, Vipan, Jimenez, Jose, Lee, Cathy, Cao, Yu, Chabak, Kelson D., Jessen, Gregg H.

    Published in IEEE electron device letters (01-07-2019)
    “…We report the dc and RF performance of ScAlN/GaN high-electron-mobility transistors (HEMTs). The ScAlN/GaN material was epitaxially grown onto a GaN template…”
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    Nanoscale groove textured β-Ga2O3 by room temperature inverse metal-assisted chemical etching and photodiodes with enhanced responsivity by Kim, Munho, Huang, Hsien-Chih, Kim, Jeong Dong, Chabak, Kelson D., Kalapala, Akhil Raj Kumar, Zhou, Weidong, Li, Xiuling

    Published in Applied physics letters (26-11-2018)
    “…β-Ga2O3 is an emerging wide band-gap semiconductor that holds great promise for next generation power electronics and optoelectronics. β-Ga2O3 based…”
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    Wide-field Optical Spectroscopy of Abell 133: A Search for Filaments Reported in X-Ray Observations by Connor, Thomas, Kelson, Daniel D., Mulchaey, John, Vikhlinin, Alexey, Patel, Shannon G., Balogh, Michael L., Joshi, Gandhali, Kraft, Ralph, Nagai, Daisuke, Starikova, Svetlana

    Published in The Astrophysical journal (01-11-2018)
    “…Filaments of the cosmic web have long been associated with the threadlike structures seen in galaxy redshift surveys. However, despite their baryon content…”
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    RF Power Performance of Sc(Al,Ga)N/GaN HEMTs at Ka-Band by Green, Andrew J., Moser, Neil, Miller, Nicholas C., Liddy, Kyle J., Lindquist, Miles, Elliot, Michael, Gillespie, James K., Fitch, Robert C., Gilbert, Ryan, Walker, Dennis E., Werner, Elizabeth, Crespo, Antonio, Beam, Edward, Xie, Andy, Lee, Cathy, Cao, Yu, Chabak, Kelson D.

    Published in IEEE electron device letters (01-08-2020)
    “…We report the RF power results of Sc(Al,Ga)N/GaN high electron mobility transistors (HEMTs). We show dc, small-signal RF and load-pull performance at 30 GHz…”
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