Search Results - "Kelchner, K. M."

Pulsed high-power AlGaN-cladding-free blue laser diodes on semipolar (202¯1¯) GaN substrates by Pourhashemi, A., Farrell, R. M., Hardy, M. T., Hsu, P. S., Kelchner, K. M., Speck, J. S., DenBaars, S. P., Nakamura, S.

“…We demonstrate high-power AlGaN-cladding-free blue laser diodes (LDs) on semipolar (202¯1¯) GaN substrates with peak output powers and external quantum…”
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Photoexcited carrier recombination in wide m -plane InGaN/GaN quantum wells by Marcinkevičius, S., Kelchner, K. M., Kuritzky, L. Y., Nakamura, S., DenBaars, S. P., Speck, J. S.

“…Carrier recombination in single 10 nm wide m-plane homoepitaxial In0.15Ga0.85N/GaN quantum wells was examined by time-resolved photoluminescence. The radiative…”
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Optical properties of extended and localized states in m -plane InGaN quantum wells by Marcinkevičius, S., Kelchner, K. M., Nakamura, S., DenBaars, S. P., Speck, J. S.

“…Scanning near-field and time-resolved photoluminescence spectroscopy were applied to study potential fluctuations and photoexcited carrier dynamics in single…”
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Near-field investigation of spatial variations of (202¯1¯) InGaN quantum well emission spectra by Marcinkevičius, S., Zhao, Y., Kelchner, K. M., Nakamura, S., DenBaars, S. P., Speck, J. S.

“…Scanning near-field optical spectroscopy was applied to semipolar (202¯1¯) InGaN/GaN quantum wells (QWs) to evaluate spatial homogeneity of QW band gap and its…”
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Stable vicinal step orientations in m-plane GaN by Kelchner, K.M., Kuritzky, L.Y., Nakamura, S., DenBaars, S.P., Speck, J.S.

“…The performance of InxGa1−xN-based m-plane LEDs and laser diodes grown by metalorganic chemical vapor deposition on bulk GaN substrates is currently limited by…”
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Emission characteristics of single InGaN quantum wells on misoriented nonpolar m-plane bulk GaN substrates by Kelchner, Kathryn M., Kuritzky, Leah Y., Fujito, Kenji, Nakamura, Shuji, DenBaars, Steven P., Speck, James S.

“…InGaN single quantum wells (SQWs) grown on m-plane bulk GaN substrates show significant differences in peak emission wavelength when grown on substrates…”
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Assessment of deep level defects in m -plane GaN grown by metalorganic chemical vapor deposition by Henry, T. A., Armstrong, A., Kelchner, K. M., Nakamura, S., DenBaars, S. P., Speck, J. S.

“…We report on deep level defect incorporation in n -type m -plane ( 10 1 ¯ 0 ) GaN grown by metalorganic chemical vapor deposition (MOCVD) on bulk m -plane GaN…”
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Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes by Farrell, R.M., Haeger, D.A., Chen, X., Iza, M., Hirai, A., Kelchner, K.M., Fujito, K., Chakraborty, A., Keller, S., DenBaars, S.P., Speck, J.S., Nakamura, S.

“…The properties of Si-doped GaN (GaN:Si) thin films and InGaN/GaN light-emitting diodes (LEDs) grown by metalorganic chemical vapor deposition on free-standing…”
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Stable vicinal step orientations in m- plane GaN by Kelchner, K. M., Kuritzky, L. Y., Nakamura, S., DenBaars, S. P., Speck, J. S.

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Assessment of deep level defects in m -plane GaN grown by metalorganic chemical vapor deposition by Henry, T. A., Armstrong, A., Kelchner, K. M., Nakamura, S., DenBaars, S. P., Speck, J. S.

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Assessment of deep level defects in m -plane GaN grown by metalorganic chemical vapor deposition by Henry, T. A., Armstrong, A., Kelchner, K. M., Nakamura, S., DenBaars, S. P., Speck, J. S.

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Near UV AlGaN-cladding free nonpolar InGaN/GaN laser diodes by Haeger, D. A., Holder, C., Farrell, R. M., Po Shan Hsu, Kelchner, K. M., Fujito, K., Cohen, D. A., DenBaars, S. P., Speck, J. S., Nakamura, S.

“…We have previously demonstrated the AlGaN-cladding-free (ACF) laser diode (LD) concept over a wide visible spectral range and various nonpolar/semipolar…”
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