Search Results - "Kehias, L."

Wideband, High-Efficiency GaN Power Amplifiers Utilizing a Non-Uniform Distributed Topology by Gassmann, J., Watson, P., Kehias, L., Henry, G.

“…A highly efficient, wideband power amplifier designed in GaN technology and utilizing a non-uniform distributed topology is reported in this paper. Measured…”
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High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates by Sheppard, S.T., Doverspike, K., Pribble, W.L., Allen, S.T., Palmour, J.W., Kehias, L.T., Jenkins, T.J.

“…Record performance of high-power GaN/Al/sub 0.14/-Ga/sub 0.86/N high-electron mobility transistors (HEMTs) fabricated on semi-insulating (SI) 4H-SiC substrates…”
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High Al-content AlGaN/GaN MODFETs for ultrahigh performance by Wu, Y.-F., Keller, B.P., Fini, P., Keller, S., Jenkins, T.J., Kehias, L.T., Denbaars, S.P., Mishra, U.K.

“…The use of an AlGaN layer with high Al mole-fraction is proposed to increase the equivalent figures of merit of the AlGaN/GaN MODFET structure. It is shown…”
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Microwave performance of AlGaN/GaN inverted MODFET's by Aktas, O., Fan, Z.F., Botchkarev, A., Mohammad, S.N., Roth, M., Jenkins, T., Kehias, L., Morkoc, H.

“…A continuous wave output power of 1.5 W/mm with a power added efficiency of 17.5% has been achieved at 4 GHz in inverted AlGaN/GaN MODFET's (IMODFET's) with 2…”
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Highest efficiency, linear X-band performance using InP DHBTs - 48% PAE at 30 dB C/IM3 by Kehias, L., Jenkins, T., Quach, T., Watson, P., Welch, R., Worley, R., Oki, A.K., Yen, H.C., Gutierrez-Aitken, A., Okamura, W., Kaneshiro, E.

“…InP single heterojunction bipolar transistors have previously demonstrated 5-10 dB lower third-order intermodulation products (IM3) compared to GaAs…”
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Ultrahigh-efficiency power amplifier for space radar applications by Quach, T.K., Watson, P.M., Okamura, W., Kaneshiro, E.N., Gutierrez-Aitken, A., Block, T.R., Eldredge, J.W., Jenkins, T.J., Kehias, L.T., Oki, A.K., Sawdai, D., Welch, R.J., Worley, R.D.

“…This paper describes a broad-band switch mode power amplifier based on the indium phosphide (InP) double heterojunction bipolar transistor (DHBT) technology…”
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Very high-power-density CW operation of GaAs/AlGaAs microwave heterojunction bipolar transistors by Bayraktaroglu, B., Barrette, J., Kehias, L., Huang, C.I., Fitch, R., Neidhard, R., Scherer, R.

“…Thermal instability of multi-emitter high-power microwave heterojunction bipolar transistors (HBTs) was eliminated using a novel heat spreading technique that…”
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Ultrahigh efficiency obtained with GaAs-on-insulator MESFET technology by Jenkins, T.J., Kehias, L., Parikh, P., Ibbetson, J., Mishra, U., Docter, D., Le, M., Pusl, J., Widman, D.

“…Significant results of measurement and calculation of power-added efficiency (PAE) and drain efficiency are presented for MESFET's that use GaAs-on-insulator…”
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Record power-added-efficiency, low-voltage GOI (GaAs on insulator) MESFET technology for wireless applications by Parikh, P., Ibbetson, J., Mishra, U., Docter, D., Minh Le, Kiziloglu, K., Grider, D., Pusl, J., Widman, D., Kehias, L., Jenkins, T.

“…A record-high power-added efficiency (PAE) is obtained from a GaAs on insulator (GOI) MESFET. Al/sub 2/O/sub 3/ obtained by the wet oxidation of Al/sub…”
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Ultra-efficient X-band and linear-efficient Ka-band power amplifiers using indium phosphide double heterojunction bipolar transistors by Quach, T., Okamura, W., Gutierrez-Aitken, A., Jenkins, T., Kaneshiro, E., Kehias, L., Sawdai, D., Watson, P., Welch, R., Worley, R., Yen, H.C.

“…We report on an ultra-efficient circuit at X-band and a linear-efficient circuit at Ka-band using InP double heterojunction bipolar transistors (DHBTs). The…”
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Thermally stable AlGaAs/GaAs microwave power HBT's by Bayraktaroglu, B., Barrette, J., Fitch, R., Kehias, L., Huang, C.I., Neidhard, R., Scherer, R.

“…Novel thermal shunt and thermal lens techniques have been used in the design of multiple-emitter AlGaAs/GaAs power HBTs (heterojunction bipolar transistors)…”
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High linearity, robust, AlGaN-GaN HEMTs for LNA and receiver ICs by Parikh, P., Wu, Y., Moore, M., Chavarkar, P., Mishra, U., Neidhard, R., Kehias, L., Jenkins, T.

“…AlGaN-GaN HEMTs have not only been identified as the technology of choice for next generation high-power, high frequency applications but recently have also…”
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Low noise hybrid amplifier using AlGaN/GaN power HEMT devices by Welch, R., Jenkins, T., Neidhard, B., Kehias, L., Quach, T., Watson, P., Worley, R., Barsky, M., Sandhu, R., Wojtowicz, M.

“…This work reports on efforts to demonstrate AlGaN/GaN Low Noise Amplifiers (LNAs) in epitaxial material designed to build power transistors. The hybrid LNA…”
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Ultra-high efficiency operation based on an alternative class-E mode by Watson, P., Neidhard, R., Kehias, L., Welch, R., Quach, T., Worley, R., Pacer, M., Pappaterra, R., Schweller, R., Jenkins, T.

“…This work demonstrates an alternative ultra-high efficiency solution for class-E amplifier design when non-ideal device characteristics are present. The result…”
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Short channel AlGaN/GaN MODFET's with 50-GHz fT and 1.7-W/mm output-power at 10 GHz by Wu, Y.-F., Keller, B.P., Keller, S., Nguyen, N.X., Le, M., Nguyen, C., Jenkins, T.J., Kehias, L.T., Denbaars, S.P., Mishra, U.K.

“…A thin barrier-donor layer of 200 /spl Aring/ was used to increase the active input capacitance and improve the extrinsic current-gain cutoff frequency (f T )…”
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Broadband class-E power amplifier for space radar application by Quach, T., Watson, P., Okamura, W., Kaneshiro, E., Gutierrez-Aitken, A., Block, T., Eldredge, J., Jenkins, T., Kehias, L., Oki, A., Sawdai, D., Welch, R., Worley, R.

“…We report on a broadband high efficiency power amplifier using Indium Phosphide (InP) double heterojunction bipolar transistor (DHBT) technology. The amplifier…”
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InP double heterojunction bipolar transistor linear-efficient power amplifiers by Kehias, L., Calcatera, M., Jenkins, T., Quach, T., Watson, P., Welch, R., Worley, R.

“…Excellent linear efficiency has been demonstrated with InP double heterojunction bipolar transistors (DHBTs) being developed for military and commercial…”
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Record power-added efficiency using GaAs on insulator MESFET technology by Jenkins, T., Kehias, L., Parikh, P., Ibbetson, J., Mishra, U., Docter, D., Minh Le, Kiziloglu, K., Grider, D., Pusl, J.

“…Record power-added efficiency (PAE) of 89% was obtained at 8 GHz with a gain of 9.6 dB using GaAs on insulator (GOI) MESFETs, which were operated using a 3 V…”
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Design and fabrication of thermally-stable AlGaAs/GaAs microwave power HBTs by Bayraktaroglu, B., Fitch, R., Barrette, J., Scherer, R., Kehias, L., Huang, C.I.

“…Record power density performance of AlGaAs/GaAs microwave power heterojunction bipolar transistors (HBTs) was accomplished through the use of novel design and…”
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Short channel AlGaN/GaN MODFET''s with 50-GHz f(T) and1.7-W/mm output-power at 10 GHz by Wu, Y-F, Keller, B P, Keller, S, Nguyen, N X, Le, M, Nguyen, C, Jenkins, T J, Kehias, L T, Denbaars, S P, Mishra, U K

“…A thin barrier-donor layer of 200 A was used to increase the active input capacitance and improve the extrinsic current-gain cutoff frequency (f(t)) of…”
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