Search Results - "Keh-Yung Cheng"

An analytical programming model for the drain-coupling source-side injection split gate flash EEPROM by Yu-Hsiung Wang, Meng-Chyi Wu, Chrong-Jong Lin, Wen-Ting Chu, Yung-Tao Lin, Wang, C.S., Keh-Yung Cheng

“…This paper presents a compact and accurate analytical model for evaluating the programming behaviors of the drain-coupling source-side injection (SSI)…”
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Graded base type-II InP/GaAsSb DHBT with fT=475 GHz by Snodgrass, W., Bing-Ruey Wu, Hafez, W., Keh-Yung Cheng, Milton Feng

“…The first demonstration of a type-II InP/GaAsSb double heterojunction bipolar transistor (DHBT) with a compositionally graded InGaAsSb to GaAsSb base layer is…”
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Optimization of AuGe-Ni-Au ohmic contacts for GaAs MOSFETs by Hung-Cheng Lin, Senanayake, S., Keh-Yung Cheng, Minghwei Hong, Kwo, J.R., Bin Yang, Mannaerts, J.P.

“…GaAs-based metal-oxide-semiconductor field-effect transistors (MOSFETs) are promising devices for high-speed and high-power applications. One important factor…”
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Edge-coupled InGaAs PIN photodiode with a light funnel waveguide by Chyi-Da Yang, Po-Hsun Lei, Der-Jin Pong, Ming-Yuan Wu, Ho, C.-L., Wen-Jeng Ho, Meng-Chyi Wu, Keh-Yung Cheng

“…We have successfully fabricated InGaAs edge-coupled photodiodes (EC-PDs) with a light funnel integrated (LIFI) in front of the coupling aperture, called LIFI…”
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AlGaInP multiple quantum wire heterostructure lasers prepared by the strain-induced lateral-layer ordering process by Pearah, P.J., Chen, A.C., Moy, A.M., Kuang-Chien Hsieh, Keh-Yung Cheng

“…We have established an in situ technique, the strain-induced lateral-layer ordering (SILO) process, whereby lateral composition modulation perpendicular to the…”
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Design the GaN junction barrier schottky diodes with array p-type pillar by Shao-Yen Chiu, Yu-Li Wang, Wei-Chen Yang, Yu-Teng Tseng, Cheng, Keh-Yung Norman

“…The performance of JBS (P, S) structure within threading dislocations-induced (GaN on PSS~108cm-2) traps and in drift-diffusion simulations, including the…”
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Modeling the effect of acceptor-type traps on internal electric field of a GaN-pin device phenomenon by Shao-Yen Chiu, Yu-Teng Tseng, Wei-Chen Yang, Cheng, Keh-Yung Norman

“…The performance of a pin structure diode fabricated on epitaxial layer on a GaN template using re-growth p-type GaN technology by PAMBE. Experimental results…”
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A MODFET-based optoelectronic integrated circuit receiver for optical interconnects by Ketterson, A.A., Seo, J.-W., Tong, M.H., Nummila, K.L., Morikuni, J.J., Cheng, K.-Y., Kang, S.-M., Adesida, I.

“…The design, fabrication, and characterization of a 0.85- mu m sensitive photoreceiver is described. The monolithically integrated optoelectronic receiver is…”
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Graded base type-II InP/GaAsSb DHBT with f/sub T/=475 GHz by Snodgrass, W., Bing-Ruey Wu, Hafez, W., Keh-Yung Cheng, Milton Feng

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Graded base type-II InP/GaAsSb DHBT with f/sub T/%3D475 GHz by Snodgrass, W, Wu, Bing-Ruey, Hafez, W, Cheng, Keh-Yung, Feng, Milton

“…The first demonstration of a type-II InP/GaAsSb double heterojunction bipolar transistor (DHBT) with a compositionally graded InGaAsSb to GaAsSb base layer is…”
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Graded base type-II InP/GaAsSb DHBT with f sub(T)=475 GHz by Snodgrass, W, Wu, Bing-Ruey, Hafez, W, Cheng, Keh-Yung, Feng, Milton

“…The first demonstration of a type-II InP/GaAsSb double heterojunction bipolar transistor (DHBT) with a compositionally graded InGaAsSb to GaAsSb base layer is…”
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AIGalnP multiple quantum wire heterostructure lasers prepared by the strain-Induced lateral-layer ordering process by Pearah, Paul J, Chen, Arnold C, Moy, Aaron M, Hsieh, Kuang-Chien, Cheng, Keh-Yung

“…We have established an in situ technique, the strain-induced lateral-layer ordering (SILO) process, whereby lateral composition modulation perpendicular to the…”
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AlGaInP multiple wire heterostructure lasers prepared by the strain-induced lateral-layer ordering process : Strained-layer optoelectronic materials and devices: Strained-layer optoelectronic materials and devices by PEARAH, P. J, CHEN, A. C, MOY, A. M, KUANG-CHIEN HSIEH, KEH-YUNG CHENG

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A comparative study of metal-semiconductor-metal photodetectors on GaAs with indium-tin-oxide and Ti/Au electrodes by Seo, J.-W., Ketterson, A.A., Ballegeer, D.G., Cheng, K.-Y., Adesida, I., Li, X., Gessert, T.

“…Metal-semiconductor-metal (MSM) photodiodes with interdigitated indium-tin-oxide (ITO) electrodes have been fabricated on undoped GaAs using…”
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