Search Results - "Kechang Song"
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1
Failure mode characterizations of semiconductor lasers
Published in AIP advances (01-09-2023)“…Catastrophic optical mirror damage (COMD) and catastrophic optical bulk damage (COBD) are the main factors that affect the reliability of semiconductor lasers…”
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Journal Article -
2
Carrier Transport in InGaN MQWs of Aquamarine- and Green-Laser Diodes
Published in IEEE journal of selected topics in quantum electronics (01-09-2011)“…We studied experimentally and theoretically the substrate-orientation impact on carrier transport and capture in InGaN multiple quantum well (MQW) laser diodes…”
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Journal Article -
3
107-mW low-noise green-light emission by frequency doubling of a reliable 1060-nm DFB semiconductor laser diode
Published in IEEE photonics technology letters (01-03-2006)“…We have generated 107-mW green-light emission by frequency doubling of a reliable 1060-nm distributed feedback (DFB) laser diode using a periodically poled…”
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Journal Article -
4
High-power high-Modulation-speed 1060-nm DBR lasers for Green-light emission
Published in IEEE photonics technology letters (15-02-2006)“…We report on the static and dynamic performance of high-power and high-modulation-speed 1060-nm distributed Bragg reflector (DBR) lasers for green-light…”
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Journal Article -
5
Optical gain and gain saturation of blue-green InGaN quantum wells
Published in Physica status solidi. A, Applications and materials science (01-06-2010)“…Using varied stripe length method we systematically studied optical gain properties of blue‐green 3 nm InGaN QWs grown on c‐plane and (11−22) semipolar…”
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Journal Article -
6
Testing of high-power semiconductor laser bars
Published in Journal of lightwave technology (01-02-2005)“…A measurement system called laser bar prober for characterizing high-power semiconductor edge-emitting laser bars is described. The laser bar prober is fully…”
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Journal Article -
7
480-mW DBR Laser Integrated with Micro Heaters for Wavelength Tuning
Published in 2007 Conference on Lasers and Electro-Optics (CLEO) (01-05-2007)“…We fabricated 1060-nm DBR lasers with 480-mW output power and integrated micro heaters. A 20-nm discrete wavelength tuning using Bragg-section heater alone and…”
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Conference Proceeding -
8
A metallization scheme for junction-down bonding of high-power semiconductor lasers
Published in IEEE transactions on advanced packaging (01-08-2006)“…High-power semiconductor lasers have found increasing applications in industrial, military, commercial, and consumer products. The thermal management of…”
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Journal Article -
9
X-ray diffraction of strain relaxation in Si-Si1-xGex heterostructures
Published in Applied physics letters (23-01-1989)Get full text
Journal Article -
10
Reliability and qualification of high-power wavelength-tunable 1060-nm laser diode for ultra-compact laser projector application
Published in 2009 IEEE LEOS Annual Meeting Conference Proceedings (01-10-2009)“…We report highly reliable 1060-nm DBR semiconductor lasers after aging the gain section and DBR-section heater for up to 24000 and 11000 hrs, respectively, at…”
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Conference Proceeding
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11
Design and implementation of metallization structures for epi-down bonded high power semiconductor lasers
Published in 2004 Proceedings. 54th Electronic Components and Technology Conference (IEEE Cat. No.04CH37546) (2004)“…High power semiconductor lasers have found increasing applications in industrial, military, commercial and consumer products. The thermal management of high…”
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Conference Proceeding -
12
High power 880nm laser chip with a predicted MTTF of 200,000 hours
Published in 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) (01-06-2019)“…Large optical cavity and low internal losses less than 0.62cm -1 were both used in the 880nm laser structure design, and the epitaxy of this structure was…”
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Conference Proceeding -
13
Polarization measurement method of semiconductor laser
Published in 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) (01-06-2019)“…In this paper, the polarization degree of semiconductor laser device in COS package form is measured according to the principle of collimation lens, the light…”
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Conference Proceeding -
14
X-ray diffraction of strain relaxation in Si-Si1− x Ge x heterostructures
Published in Applied physics letters (23-01-1989)“…We report a double-crystal x-ray diffraction study of the relaxation of molecular beam epitaxy grown Si-Si1−xGex strained single layers and superlattices on…”
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Journal Article -
15
High power 1060 nm DBR lasers with quantum well intermixed passive sections
Published in 2005 IEEE LEOS Annual Meeting Conference Proceedings (2005)“…We report a single-wavelength 1060 nm distributed Bragg reflector laser with a record high single lateral mode optical power of 400 mW. These lasers are…”
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Conference Proceeding -
16
Boron redistribution in doping superlattices grown by silicon molecular beam epitaxy using B2O3
Published in Applied physics letters (05-09-1988)“…Coevaporation of B2O3 during silicon molecular beam epitaxy has been used to prepare heavily doped superlattices (pipi’s). Full activation up to 3×1020 cm−3…”
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Journal Article -
17
High-power uncooled 975-nm Bragg grating stabilized thick-quantum-well lasers
Published in Conference on Lasers and Electro-Optics, 2004. (CLEO) (2004)“…Coherence-collapse operation of a Bragg grating stabilized thick-quantum-well laser diode yields 975-nm wavelength emission with >40 dB side-mode-suppression…”
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Conference Proceeding -
18
Reliability of High-Power 1060-nm DBR Lasers
Published in LEOS 2006 - 19th Annual Meeting of the IEEE Lasers and Electro-Optics Society (01-10-2006)“…We report highly reliable 1060-nm DBR lasers with a single-wavelength output power larger than 350 mW and a failure rate as low as 3.2 kFITs at a heat-sink…”
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Conference Proceeding -
19
High power 1060-nm raised-ridge strained single-quantum-well lasers
Published in 2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest (2004)“…We report a high kink-free facet power of 852 mW and a high single-wavelength facet power of 350 mW for 1060-nm raised-ridge Fabry-Perot (FP) and…”
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Conference Proceeding