Search Results - "Keast, Craig"
-
1
Epitaxial Graphene Transistors on SiC Substrates
Published in IEEE transactions on electron devices (01-08-2008)“…This paper describes the behavior of top-gated transistors fabricated using carbon, specifically epitaxial graphene on SiC, as the active material. Although…”
Get full text
Journal Article -
2
Work-Function-Tuned TiN Metal Gate FDSOI Transistors for Subthreshold Operation
Published in IEEE transactions on electron devices (01-02-2011)“…The effective work function of a reactively sputtered TiN metal gate is shown to be tunable from 4.30 to 4.65 eV. The effective work function decreases with…”
Get full text
Journal Article -
3
FDSOI Process Technology for Subthreshold-Operation Ultralow-Power Electronics
Published in Proceedings of the IEEE (01-02-2010)“…Ultralow-power electronics will expand the technological capability of handheld and wireless devices by dramatically improving battery life and portability. In…”
Get full text
Journal Article -
4
A wafer-scale 3-D circuit integration technology
Published in IEEE transactions on electron devices (01-10-2006)“…The rationale and development of a wafer-scale three-dimensional (3-D) integrated circuit technology are described. The essential elements of the 3-D…”
Get full text
Journal Article -
5
Wafer-Scale Packaged RF Microelectromechanical Switches
Published in IEEE transactions on microwave theory and techniques (01-02-2008)“…This paper presents results of fully packaged RF microelectromechanical (RF-MEM) switches including capacitive series, series-shunt, and single-pole-four-throw…”
Get full text
Journal Article -
6
Generation and Propagation of Single Event Transients in 0.18- \mu Fully Depleted SOI
Published in IEEE transactions on nuclear science (01-12-2008)“…Single event transients were characterized experimentally in fast logic circuits fabricated in 0.18-mum FDSOI CMOS process using laser-probing techniques. We…”
Get full text
Journal Article -
7
Graphene-on-Insulator Transistors Made Using C on Ni Chemical-Vapor Deposition
Published in IEEE electron device letters (01-07-2009)“…Graphene transistors are made by transferring a thin graphene film grown on Ni onto an insulating SiO 2 substrate. The properties and integration of these…”
Get full text
Journal Article -
8
InAlN/GaN-on-Si HEMT with 4.5 W/mm in a 200-mm CMOS-Compatible MMIC Process for 3D Integration
Published in 2020 IEEE/MTT-S International Microwave Symposium (IMS) (01-08-2020)“…In this paper we present a fully CMOS-compatible fabrication process for GaN-on-Si monolithic microwave integrated circuits (MMICs) on 200-mm-diameter wafers…”
Get full text
Conference Proceeding -
9
-
10
MEMS microswitches for reconfigurable microwave circuitry
Published in IEEE microwave and wireless components letters (01-03-2001)“…The performance is reported for a new microelectromechanical structure (MEMS) cantilever microswitch. We report on both dc- and capacitively-contacted…”
Get full text
Journal Article -
11
Effects of Ionizing Radiation on Digital Single Event Transients in a 180-nm Fully Depleted SOI Process
Published in IEEE transactions on nuclear science (01-12-2009)“…Effects of ionizing radiation on single event transients are reported for Fully Depleted SOI (FDSOI) technology using experiments and simulations. Logic…”
Get full text
Journal Article -
12
Megapixel CMOS image sensor fabricated in three-dimensional integrated circuit technology
Published in ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State Circuits Conference, 2005 (2005)“…A 1024/spl times/1024 integrated image sensor with 8 /spl mu/m pixels, is developed with 3D fabrication in 150 mm wafer technology. Each pixel contains a 2…”
Get full text
Conference Proceeding -
13
Large tuning range analog and multi-bit MEMS varactors
Published in 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535) (2004)“…This paper presents a variety of analog and multi-bit RF MEMS varactors for use in tunable circuits and filters. Novel use of multiple pull-down electrodes…”
Get full text
Conference Proceeding -
14
Epitaxial graphene transistors on SiC substrates
Published in 2008 Device Research Conference (01-06-2008)“…Graphene holds great promise for future electronic technology. It has very high mobility even for thin films, and is compatible with high-k dielectrics. Thus…”
Get full text
Conference Proceeding -
15
Wide-band low-loss MEMS packaging technology
Published in IEEE MTT-S International Microwave Symposium Digest, 2005 (2005)“…This paper presents a wafer scale low-loss and broad-band RF MEMS packaging technology developed at MIT Lincoln Laboratory. The fabrication includes CMOS…”
Get full text
Conference Proceeding -
16
Power handling and linearity of MEM capacitive series switches
Published in IEEE MTT-S International Microwave Symposium Digest, 2003 (2003)“…This paper presents the power handling and linearity of a capacitive series MEMS switch. The switching time as a function of incident RF power is also…”
Get full text
Conference Proceeding -
17
A CCD/CMOS-based imager with integrated focal plane signal processing
Published in IEEE journal of solid-state circuits (01-04-1993)“…Using a CCD/CMOS technology, a fully parallel 4*4 focal plane processor, which performs image acquisition, smoothing, and segmentation, has been fabricated and…”
Get full text
Journal Article -
18
Enhanced resolution for future fabrication
Published in IEEE circuits and devices magazine (01-01-2003)“…We have developed resolution-enhanced optical lithography processes that have enabled us to fabricate devices with deep sub-100 nm feature sizes. Isolated gate…”
Get full text
Journal Article -
19
Analog VLSI systems for image acquisition and fast early vision processing
Published in International journal of computer vision (01-09-1992)“…This article describes a project to design and build prototype analog early vision systems that are remarkably low-power, small, and fast. Three chips are…”
Get full text
Journal Article -
20
Wideband compressive receiver based on advanced superconductor and semiconductor circuits
Published in IEEE transactions on applied superconductivity (01-06-1997)“…A novel compressive cryoreceiver architecture has been proposed combining analog HTS, cryoelectronic, and advanced high-speed GaAs and high-speed/low-power SOI…”
Get full text
Journal Article Conference Proceeding