Search Results - "Keast, Craig"

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  1. 1

    Epitaxial Graphene Transistors on SiC Substrates by Kedzierski, Jakub, Hsu, Pei-Lan, Healey, Paul, Wyatt, Peter W., Keast, Craig L., Sprinkle, Mike, Berger, Claire, de Heer, Walt A.

    Published in IEEE transactions on electron devices (01-08-2008)
    “…This paper describes the behavior of top-gated transistors fabricated using carbon, specifically epitaxial graphene on SiC, as the active material. Although…”
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    Journal Article
  2. 2

    Work-Function-Tuned TiN Metal Gate FDSOI Transistors for Subthreshold Operation by Vitale, S A, Kedzierski, J, Healey, P, Wyatt, P W, Keast, C L

    Published in IEEE transactions on electron devices (01-02-2011)
    “…The effective work function of a reactively sputtered TiN metal gate is shown to be tunable from 4.30 to 4.65 eV. The effective work function decreases with…”
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    Journal Article
  3. 3

    FDSOI Process Technology for Subthreshold-Operation Ultralow-Power Electronics by Vitale, Steven A., Wyatt, Peter W., Checka, Nisha, Kedzierski, Jakub, Keast, Craig L.

    Published in Proceedings of the IEEE (01-02-2010)
    “…Ultralow-power electronics will expand the technological capability of handheld and wireless devices by dramatically improving battery life and portability. In…”
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    Journal Article
  4. 4

    A wafer-scale 3-D circuit integration technology by Burns, J.A., Aull, B.F., Chen, C.K., Chang-Lee Chen, Keast, C.L., Knecht, J.M., Suntharalingam, V., Warner, K., Wyatt, P.W., Yost, D.-R.W.

    Published in IEEE transactions on electron devices (01-10-2006)
    “…The rationale and development of a wafer-scale three-dimensional (3-D) integrated circuit technology are described. The essential elements of the 3-D…”
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    Journal Article
  5. 5

    Wafer-Scale Packaged RF Microelectromechanical Switches by Muldavin, J., Bozler, C.O., Rabe, S., Wyatt, P.W., Keast, C.L.

    “…This paper presents results of fully packaged RF microelectromechanical (RF-MEM) switches including capacitive series, series-shunt, and single-pole-four-throw…”
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    Journal Article
  6. 6

    Generation and Propagation of Single Event Transients in 0.18- \mu Fully Depleted SOI by Gouker, P., Brandt, J., Wyatt, P., Tyrrell, B., Soares, A., Knecht, J., Keast, C., McMorrow, D., Narasimham, B., Gadlage, M., Bhuva, B.

    Published in IEEE transactions on nuclear science (01-12-2008)
    “…Single event transients were characterized experimentally in fast logic circuits fabricated in 0.18-mum FDSOI CMOS process using laser-probing techniques. We…”
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    Journal Article
  7. 7

    Graphene-on-Insulator Transistors Made Using C on Ni Chemical-Vapor Deposition by Kedzierski, J., Pei-Lan Hsu, Reina, A., Jing Kong, Healey, P., Wyatt, P., Keast, C.

    Published in IEEE electron device letters (01-07-2009)
    “…Graphene transistors are made by transferring a thin graphene film grown on Ni onto an insulating SiO 2 substrate. The properties and integration of these…”
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    Journal Article
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    MEMS microswitches for reconfigurable microwave circuitry by Duffy, S., Bozler, C., Rabe, S., Knecht, J., Travis, L., Wyatt, P., Keast, C., Gouker, M.

    “…The performance is reported for a new microelectromechanical structure (MEMS) cantilever microswitch. We report on both dc- and capacitively-contacted…”
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  11. 11

    Effects of Ionizing Radiation on Digital Single Event Transients in a 180-nm Fully Depleted SOI Process by Gouker, P.M., Gadlage, M.J., McMorrow, D., McMarr, P., Hughes, H., Wyatt, P., Keast, C., Bhuva, B.L., Narasimham, B.

    Published in IEEE transactions on nuclear science (01-12-2009)
    “…Effects of ionizing radiation on single event transients are reported for Fully Depleted SOI (FDSOI) technology using experiments and simulations. Logic…”
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    Journal Article
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    Large tuning range analog and multi-bit MEMS varactors by Muldavin, J., Bozler, C., Rabe, S., Keast, C.

    “…This paper presents a variety of analog and multi-bit RF MEMS varactors for use in tunable circuits and filters. Novel use of multiple pull-down electrodes…”
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    Conference Proceeding
  14. 14

    Epitaxial graphene transistors on SiC substrates by Kedzierski, J., Pei-Lan Hsu, Healey, P., Wyatt, P., Keast, C.

    Published in 2008 Device Research Conference (01-06-2008)
    “…Graphene holds great promise for future electronic technology. It has very high mobility even for thin films, and is compatible with high-k dielectrics. Thus…”
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    Conference Proceeding
  15. 15

    Wide-band low-loss MEMS packaging technology by Muldavin, J., Bozler, C., Rabe, S., Keast, C.

    “…This paper presents a wafer scale low-loss and broad-band RF MEMS packaging technology developed at MIT Lincoln Laboratory. The fabrication includes CMOS…”
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    Conference Proceeding
  16. 16

    Power handling and linearity of MEM capacitive series switches by Muldavin, J., Boisvert, R., Bozler, C., Rabe, S., Keast, C.

    “…This paper presents the power handling and linearity of a capacitive series MEMS switch. The switching time as a function of incident RF power is also…”
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    Conference Proceeding
  17. 17

    A CCD/CMOS-based imager with integrated focal plane signal processing by Keast, C.L., Sodini, C.G.

    Published in IEEE journal of solid-state circuits (01-04-1993)
    “…Using a CCD/CMOS technology, a fully parallel 4*4 focal plane processor, which performs image acquisition, smoothing, and segmentation, has been fabricated and…”
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    Journal Article
  18. 18

    Enhanced resolution for future fabrication by Fritze, M., Keast, C.L., Chen, C.K., Astolfi, D.K., Yost, D.R., Burns, J.A., Chang-Lee Chen, Gouker, P.M., Suntharalingam, V., Wyatt, P.W.

    Published in IEEE circuits and devices magazine (01-01-2003)
    “…We have developed resolution-enhanced optical lithography processes that have enabled us to fabricate devices with deep sub-100 nm feature sizes. Isolated gate…”
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    Journal Article
  19. 19

    Analog VLSI systems for image acquisition and fast early vision processing by Wyatt, John L., Keast, Craig, Seidel, Mark, Standley, David, Horn, Berthold, Knight, Tom, Sodini, Charles, Lee, Hae-Seung, Poggio, Tomaso

    Published in International journal of computer vision (01-09-1992)
    “…This article describes a project to design and build prototype analog early vision systems that are remarkably low-power, small, and fast. Three chips are…”
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  20. 20

    Wideband compressive receiver based on advanced superconductor and semiconductor circuits by Lyons, W.G., Arsenault, D.R., Keast, C.L., Shaver, D.C., Berger, R., Anderson, A.C., Murphy, P.G., Sollner, T.C.L.G., Ralston, R.W.

    “…A novel compressive cryoreceiver architecture has been proposed combining analog HTS, cryoelectronic, and advanced high-speed GaAs and high-speed/low-power SOI…”
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    Journal Article Conference Proceeding