Search Results - "Kazzi, Salim El"

Reactive plasma cleaning and restoration of transition metal dichalcogenide monolayers by Marinov, Daniil, de Marneffe, Jean-François, Smets, Quentin, Arutchelvan, Goutham, Bal, Kristof M., Voronina, Ekaterina, Rakhimova, Tatyana, Mankelevich, Yuri, El Kazzi, Salim, Nalin Mehta, Ankit, Wyndaele, Pieter-Jan, Heyne, Markus Hartmut, Zhang, Jianran, With, Patrick C., Banerjee, Sreetama, Neyts, Erik C., Asselberghs, Inge, Lin, Dennis, De Gendt, Stefan

“…The cleaning of two-dimensional (2D) materials is an essential step in the fabrication of future devices, leveraging their unique physical, optical, and…”
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Assessment of wafer scale MoS2 atomic layers grown by metal–organic chemical vapor deposition using organo-metal, organo-sulfide, and H2S precursors by Curtis, Michael, Maryon, Olivia, McKibben, Nicholas, Eixenberger, Josh, Chen, Chen, Chinnathambi, Karthik, Pasko, Sergej, Salim El Kazzi, Redwing, Joan M, Estrada, David

“…Transition Metal Dichalcogenides (TMDs) are a unique class of materials that exhibit attractive electrical and optical properties which have generated…”
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Epitaxial registry and crystallinity of MoS2 via molecular beam and metalorganic vapor phase van der Waals epitaxy by Mortelmans, Wouter, El Kazzi, Salim, Groven, Benjamin, Nalin Mehta, Ankit, Balaji, Yashwanth, De Gendt, Stefan, Heyns, Marc, Merckling, Clement

“…Two-dimensional transition metal dichalcogenide (TMD) semiconductors have risen as an important material class for novel nanoelectronic applications…”
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Calibration of the Effective Tunneling Bandgap in GaAsSb/InGaAs for Improved TFET Performance Prediction by Smets, Quentin, Verhulst, Anne S., El Kazzi, Salim, Gundlach, David, Richter, Curt A., Mocuta, Anda, Collaert, Nadine, Thean, Aaron Voon-Yew, Heyns, Marc M.

“…The effective bandgap for heterojunction band-to-band tunneling (E g,eff ) is a crucial design parameter for a heterojunction tunneling FET (TFET). However,…”
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Record 47 mV/dec top-down vertical nanowire InGaAs/GaAsSb tunnel FETs by Alian, Alireza, Kazzi, Salim El, Verhulst, Anne, Milenin, Alexey, Pinna, Nicolo, Ivanov, Tsvetan, Lin, Dennis, Mocuta, Dan, Collaert, Nadine

“…Pocketed vertical nanowire InGaAs/GaAsSb tunnel FETs (TFET) with sub-threshold swing (SS) reaching 47 mV/dec are demonstrated. The achieved sub-threshold…”
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Extracting the effective bandgap of heterojunctions using Esaki diode I-V measurements by Smets, Quentin, Verhulst, Anne S., El Kazzi, Salim, Verreck, Devin, Richard, Olivier, Bender, Hugo, Collaert, Nadine, Mocuta, Anda, Thean, Aaron, Heyns, Marc M.

“…The effective bandgap is a crucial design parameter of heterojunction tunneling field-effect transistors. In this letter, we demonstrate a method to measure…”
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Impact of field-induced quantum confinement on the onset of tunneling field-effect transistors: Experimental verification by Smets, Quentin, Verhulst, Anne S., Martens, Koen, Lin, Han Chung, Kazzi, Salim El, Verreck, Devin, Simoen, Eddy, Collaert, Nadine, Thean, Aaron, Raskin, Jean-Pierre, Heyns, Marc M.

“…The Tunneling Field-Effect Transistor (TFET) is a promising device for future low-power logic. Its performance is often predicted using semiclassical…”
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Built-In Sheet Charge As an Alternative to Dopant Pockets in Tunnel Field-Effect Transistors by Verreck, Devin, Verhulst, Anne S., Xiang, Yang, Yakimets, Dmitry, El Kazzi, Salim, Parvais, Bertrand, Groeseneken, Guido, Collaert, Nadine, Mocuta, Anda

“…Dopant pockets in combination with a III-V heterostructure have become a staple in simulations of tunnel field-effect transistors (TFET) to achieve acceptable…”
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Material-Selective Doping of 2D TMDC through AlxOy Encapsulation by Leonhardt, Alessandra, Chiappe, Daniele, Afanas'ev, Valeri V, El Kazzi, Salim, Shlyakhov, Ilya, Conard, Thierry, Franquet, Alexis, Huyghebaert, Cedric, de Gendt, Stefan

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Assessment of wafer scale MoS 2 atomic layers grown by metal-organic chemical vapor deposition using organo-metal, organo-sulfide, and H 2 S precursors by Curtis, Michael, Maryon, Olivia, McKibben, Nicholas, Eixenberger, Josh, Chen, Chen, Chinnathambi, Karthik, Pasko, Sergej, El Kazzi, Salim, Redwing, Joan M, Estrada, David

“…Transition Metal Dichalcogenides (TMDs) are a unique class of materials that exhibit attractive electrical and optical properties which have generated…”
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Record performance InGaAs homo-junction TFET with superior SS reliability over MOSFET by Alian, Alireza, Franco, Jacopo, Vandooren, Anne, Mols, Yves, Verhulst, Anne, El Kazzi, Salim, Rooyackers, Rita, Verreck, Devin, Smets, Quentin, Mocuta, Anda, Collaert, Nadine, Lin, Dennis, Thean, Aaron

“…InGaAs planar TFETs with 70% In content are fabricated and characterized. The increase of the In content of the 8 nm channel from 53% to 70% is found to…”
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Alcohol-Based Digital Etch for III-V Vertical Nanowires With Sub-10 nm Diameter by Wenjie Lu, Xin Zhao, Dongsung Choi, El Kazzi, Salim, del Alamo, Jesus A.

“…This letter introduces a novel alcohol-based digital etch technique for III-V FinFET and nanowire MOSFET fabrication. The new technique addresses the…”
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Nucleation and coalescence of tungsten disulfide layers grown by metalorganic chemical vapor deposition by Tang, Haonan, Pasko, Sergej, Krotkus, Simonas, Anders, Thorsten, Wockel, Cornelia, Mischke, Jan, Wang, Xiaochen, Conran, Ben, McAleese, Clifford, Teo, Ken, Banerjee, Sreetama, Silva, Henry Medina, Morin, Pierre, Asselberghs, Inge, Ghiami, Amir, Grundmann, Annika, Tang, Songyao, Fiadziushkin, Hleb, Kalisch, Holger, Vescan, Andrei, El Kazzi, Salim, Marty, Alain, Dosenovic, Djordje, Okuno, Hanako, Le Van-Jodin, Lucie, Heuken, Michael

“…•Lateral growth of nucleated WS2 domains on C-plane sapphire by MOCVD in a commercial showerhead reactor was demonstrated.•The crystalline quality of coalesced…”
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Future materials for beyond Si integrated circuits: a Perspective by Colombo, Luigi, Kazzi, Salim El, Popovici, Mihaela, Delie, Gilles, Kwon, Dae Seon, McMitchell, Sean RC, Adelmann, Christoph

“…The integration of novel materials has been pivotal in advancing Si-based devices ever since Si became the preferred material for transistors, and later,…”
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Material-Selective Doping of 2D TMDC through Al x O y Encapsulation by Leonhardt, Alessandra, Chiappe, Daniele, Afanas’ev, Valeri V, El Kazzi, Salim, Shlyakhov, Ilya, Conard, Thierry, Franquet, Alexis, Huyghebaert, Cedric, de Gendt, Stefan

“…For the integration of two-dimensional (2D) transition metal dichalcogenides (TMDC) with high-performance electronic systems, one of the greatest challenges is…”
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Assessing Ultrathin Wafer-Scale WS2 as a Diffusion Barrier for Cu Interconnects by El Kazzi, Salim, Lum, Ya Woon, Erofeev, Ivan, Vajandar, Saumitra, Pasko, Sergej, Krotkus, Simonas, Conran, Ben, Whear, Oliver, Osipowicz, Thomas, Mirsaidov, Utkur

“…To maintain the scaling trends in the complementary metal oxide semiconductor (CMOS) technology, the thickness of barrier/liner systems used in…”
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Assessing Ultrathin Wafer-Scale WS 2 as a Diffusion Barrier for Cu Interconnects by El Kazzi, Salim, Lum, Ya Woon, Erofeev, Ivan, Vajandar, Saumitra, Pasko, Sergej, Krotkus, Simonas, Conran, Ben, Whear, Oliver, Osipowicz, Thomas, Mirsaidov, Utkur

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Antimony-Mediated Control of Misfit Dislocations and Strain at the Highly Lattice Mismatched GaSb/GaAs Interface by Wang, Yi, Ruterana, Pierre, Chen, Jun, Kret, Slawomir, El Kazzi, Salim, Genevois, Cecile, Desplanque, Ludovic, Wallart, Xavier

“…Determining the atomic structure of misfit dislocations at highly lattice mismatched interface is essential to optimize the quality of the epitaxial layer…”
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Growth mode dependence of misfit dislocation configuration at lattice mismatched III-V semiconductor interfaces by Wang, Yi, Ruterana, Pierre, Desplanque, Ludovic, El Kazzi, Salim, Wallart, Xavier

“…In GaSb/GaAs hetero-epitaxy, it is shown that a two-dimensional growth of GaSb promotes the generation of Lomer dislocations and confines the lattice…”
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Ultra-scaled MOCVD MoS2 MOSFETs with 42nm contact pitch and 250µA/µm drain current by Smets, Quentin, Groven, Benjamin, Caymax, Matty, Radu, Iuliana, Arutchelvan, Goutham, Jussot, Julien, Verreck, Devin, Asselberghs, Inge, Mehta, Ankit Nalin, Gaur, Abhinav, Lin, Dennis, Kazzi, Salim El

“…We show that downscaling the top-contact length to 13nm induces no penalty on the electrical characteristics for CVD MoS 2 FETs. We demonstrate this for…”
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