Search Results - "Kazior, T. E."

Monolithic integration of InP-based transistors on Si substrates using MBE by Liu, W.K., Lubyshev, D., Fastenau, J.M., Wu, Y., Bulsara, M.T., Fitzgerald, E.A., Urteaga, M., Ha, W., Bergman, J., Brar, B., Hoke, W.E., LaRoche, J.R., Herrick, K.J., Kazior, T.E., Clark, D., Smith, D., Thompson, R.F., Drazek, C., Daval, N.

“…We report on a direct epitaxial growth approach for the heterogeneous integration of high-speed III–V devices with Si CMOS logic on a common Si substrate…”
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GaN-Based RF Power Devices and Amplifiers by Mishra, Umesh K., Shen, Likun, Kazior, Thomas E., Wu, Yi-Feng

“…The rapid development of the RF power electronics requires the introduction of wide bandgap material due to its potential in high output power density, high…”
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High Performance Mixed Signal and RF Circuits Enabled by the Direct Monolithic Heterogeneous Integration of GaN HEMTs and Si CMOS on a Silicon Substrate by Kazior, T. E., Chelakara, R., Hoke, W., Bettencourt, J., Palacios, T., Lee, H. S.

“…In this work we present recent results on the direct heterogeneous integration of GaN HEMTs and Si CMOS on a silicon substrate. GaN HEMTs whose DC and RF…”
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40-Gbit/s OEIC on GaAs substrate through metamorphic buffer technology by Zhang, Y., Whelan, C.S., Leoni, R., Marsh, P.F., Hoke, W.E., Hunt, J.B., Laighton, C.M., Kazior, T.E.

“…An optoelectronic integrated circuit operating in the 1.55-μm wavelength range was realized on GaAs substrate through metamorphic technology. High indium…”
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Trapping effects in wide-bandgap microwave FETs by Binari, S.C., Klein, P.B., Kazior, T.E.

“…It is well known that trapping effects can limit the output power performance of microwave field-effect transistors. This is particularly true for the…”
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Reliability of metamorphic HEMTs on GaAs substrates by Marsh, P.F, Whelan, C.S, Hoke, W.E, Leoni III, R.E, Kazior, T.E

“…Metamorphic HEMT (MHEMT) technology enables the growth of high indium content channels on GaAs substrates, giving them the performance of InP HEMTs. MHEMT…”
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Low noise metamorphic HEMT devices and amplifiers on GaAs substrates by Marsh, P.F., Chu, S.L.G., Lardizabal, S.M., Leoni, R.E., Kang, S., Wohlert, R., Bowlby, A.M., Hoke, W.E., McTaggart, R.A., Whelan, C.S., Lemonias, P.J., McIntosh, P.M., Kazior, T.E.

“…Excellent noise (0.41 dB minimum noise figure with 11.5 dB associated gain at 18 GHz) and linearity (third order intercept point of 37.6 dBm at 42.5 mW DC…”
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High Performance Mixed Signal Circuits Enabled by the Direct Monolithic Heterogeneous Integration of InP HBT and Si CMOS on a Silicon Substrate by Kazior, T E, LaRoche, J R, Urteaga, M, Bergman, J, Choe, M J, Lee, K J, Seong, T, Seo, M, Yen, A, Lubyshev, D, Fastenau, J M, Liu, W K, Smith, D, Clark, D, Thompson, R, Bulsara, M T, Fitzgerald, E A, Drazek, C, Guiot, E

“…We present recent results on the direct heterogeneous integration of InP HBTs and Si CMOS on a silicon template wafer or SOLES (Silicon On Lattice Engineered…”
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Millimeter-wave low-noise and high-power metamorphic HEMT amplifiers and devices on GaAs substrates by Whelan, C.S., Kazior, T.E., Marsh, P.F., Hoke, W.E., McTaggart, R.A., Lyman, P.S., Lemonias, P.J., Lardizabal, S.M., Leoni, R.E., Lichwala, S.J.

“…This paper reports on state of-the-art HEMT devices and circuit results utilizing 32% and 60% indium content InGaAs channel metamorphic technology on GaAs…”
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Capless rapid thermal annealing of GaAs using a graphite susceptor by Kazior, T.E., Brierley, S.K., Piekarski, F.J.

“…The results of experiments performed to evaluate the use of a commercially available rapid thermal annealer (RTA) with a graphite susceptor for capless rapid…”
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More Than Moore: GaN HEMTs and Si CMOS Get It Together by Kazior, T. E., LaRoche, J. R., Hoke, W. E.

“…Advances in silicon technology continue to revolutionize microelectronics. However, Si cannot do everything and circuits based on other materials systems are…”
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Low noise In sub(0.32)(AlGa) sub(0.68)As/In sub(0.43)Ga sub(0.57)As metamorphic HEMT on GaAs substrate with 850 mW/mm output power density by Whelan, C S, Hoke, W E, McTaggart, R A, Lardizabal, S M, Lyman, P S, Marsh, P F, Kazior, T E

“…A double-pulse-doped InAlGaAs/In sub(0.43)Ga sub(0.57)As metamorphic high electron mobility transistor (MHEMT) on a GaAs substrate is demonstrated with…”
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Metamorphic optoelectronic integrated circuits by Leoni, R.E., Whelan, C.S., Marsh, P.F., Zhang, Y., Hunt, J.G., Laighton, C.S., Hoke, W.E., Kazior, T.E.

“…As the required operational bandwidth of photoreceivers is increased, it becomes desirable to monolithically integrate photodiodes and transistors in order to…”
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High performance double pulse doped pseudomorphic AlGaAs/InGaAs transistors grown by molecular‐beam epitaxy by Hoke, W. E., Lyman, P. S., Labossier, W. H., Brierley, S. K., Hendriks, H. T., Shanfield, S. R., Aucoin, L. M., Kazior, T. E.

“…Double pulse doped AlGaAs/InGaAs pseudomorphic high electron mobility transistors have been grown by molecular‐beam epitaxy on GaAs substrates. Hall mobilities…”
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Trapping effects in GaN and SiC microwave FETs by Binari, S.C., Klein, P.B., Kazior, T.E.

“…It is well known that trapping effects can limit the output power performance of microwave field-effect transistors (FETs). This is particularly true for the…”
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A high performance differential amplifier through the direct monolithic integration of InP HBTs and Si CMOS on silicon substrates by Kazior, T.E., LaRoche, J.R., Lubyshev, D., Fastenau, J.M., Liu, W.K., Urteaga, M., Ha, W., Bergman, J., Choe, M.J., Bulsara, M.T., Fitzgerald, E.A., Smith, D., Clark, D., Thompson, R., Drazek, C., Daval, N., Benaissa, L., Augendre, E.

“…We present results on the direct monolithic integration of III-V devices and Si CMOS on a silicon substrate. InP HBTs (0.5 times 5 um 2 emitter) with ft and…”
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GaN technology for microwave and millimeter wave applications by Kolias, N. J., Whelan, C. S., Kazior, T. E., Smith, K. V.

“…After many years of development to improve the material and devices, GaN technology is now in production and poised to revolutionize many of today's Radar and…”
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GaAs-oxide interface states: A gigantic photoionization effect and its implications to the origin of these states by Lagowski, J., Walukiewicz, W., Kazior, T. E., Gatos, H. C., Siejka, J.

“…Gigantic photoionization was discovered on GaAs-oxide interfaces leading to the discharge of deep surface states with rates exceeding 103 times those of…”
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Progress and challenges in the direct monolithic integration of III-V devices and Si CMOS on silicon substrates by Kazior, T.E., LaRoche, J.R., Lubyshev, D., Fastenau, J.M., Liu, W.K., Urteaga, M., Ha, W., Bergman, J., Choe, M.J., Bulsara, M.T., Fitzgerald, E.A., Smith, D., Clark, D., Thompson, R., Drazek, C., Daval, N., Benaissa, L., Augendre, E.

“…We present results on the direct monolithic integration of III-V devices and Si CMOS on a silicon substrate. Through optimization of device fabrication and…”
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Thermal considerations for advanced SOI substrates designed for III-V/Si heterointegration by Yang, N., Bulsara, M.T., Fitzgerald, E.A., Liu, W.K., Lubyshev, D., Fastenau, J.M., Wu, Y., Urteaga, M., Ha, W., Bergman, J., Brar, B., Drazekd, C., Daval, N., Benaissa, L., Augendre, E., Hoke, W.E., LaRoche, J.R., Herrick, K.J., Kazior, T.E.

“…Silicon-on-lattice engineered substrates (SOLES) are SOI substrates with embedded Ge layers that facilitate III-V compound integration for advanced integrated…”
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