Search Results - "Kazantsev, D.Y."

Diffusion of zinc in gallium arsenide with the participation isovalent impurities by Karlina, L.B., Vlasov, A.S., Ber, B.Y., Kazantsev, D.Y.

“…The diffusion of Zn into GaAs in the presence of indium and phosphorus was studied. Zn diffusion was performed from the gas phase in a hydrogen flow under…”
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Au-catalyzed lateral Ga(In)AsP nanostructures grown in a quasi-closed cell by Vlasov, A.S., Karlina, L.B., Ber, B.Ya, Bert, N.A., Boiko, M.E., Kazantsev, D.Y., Levin, A.A., Smirnov, A.B., Smirnova, I.P., Soshnikov, I.P.

“…A new method for growth of Au-catalyzed lateral Ga(In)AsP nanostructures in a quasi-closed volume from a vapor source under semi-equilibrium conditions has…”
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Electrochemical lithiation of silicon with varied crystallographic orientation by Astrova, E. V., Rumyantsev, A. M., Li, G. V., Nashchekin, A. V., Kazantsev, D. Yu, Ber, B. Ya, Zhdanov, V. V.

“…The anisotropy of lithium intercalation into the silicon anodes of Li-ion batteries is studied on microstructures having the form of a grid with 0.5-μm-thick…”
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Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes by Tsatsulnikov, A. F., Lundin, W. V., Sakharov, A. V., Zavarin, E. E., Usov, S. O., Nikolaev, A. E., Cherkashin, N. A., Ber, B. Ya, Kazantsev, D. Yu, Mizerov, M. N., Park, Hee Seok, Hytch, M., Hue, F.

“…The structural and optical properties of light-emitting diode structures with an active region based on ultrathin InGaN quantum wells limited by short-period…”
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