Search Results - "Kazakova, L. P"
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Optical Properties of the Ge14Sb29Te57 and Ge15Sb15Te70 Phase-Change Materials in the Far-Infrared Range
Published in Semiconductors (Woodbury, N.Y.) (01-12-2021)“…The infrared absorption spectra of Ge 14 Sb 29 Te 57 and Ge 15 Sb 15 Te 70 chalcogenide alloys in the amorphous and crystalline states are measured and…”
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2
Multilevel Recording in Ge2Sb2Te5 Thin Films
Published in Semiconductors (Woodbury, N.Y.) (01-04-2020)“…The current–voltage characteristics measured on Ge 2 Sb 2 Te 5 thin films in the current mode are studied. The effect of multilevel recording is established…”
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3
Estimation of the Temperature of the Current Filament that Forms upon Switching in GeSbTe
Published in Semiconductors (Woodbury, N.Y.) (01-12-2018)“…The current–voltage characteristics of thin-film samples of the GeSbTe system are measured in the current control mode. Voltage oscillations observed after…”
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4
Drift mobility of charge carriers in AsSe films in the course of photoinduced transformations
Published in Glass physics and chemistry (01-05-2000)“…The drift mobility of charge carriers in AsSe films of three types (initial, irradiated, and annealed after irradiation) has been investigated in the…”
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5
Optical Properties of the Ge.sub.14Sb.sub.29Te.sub.57 and Ge.sub.15Sb.sub.15Te.sub.70 Phase-Change Materials in the Far-Infrared Range
Published in Semiconductors (Woodbury, N.Y.) (01-12-2021)“…The infrared absorption spectra of Ge.sub.14Sb.sub.29Te.sub.57 and Ge.sub.15Sb.sub.15Te.sub.70 chalcogenide alloys in the amorphous and crystalline states are…”
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6
Multilevel Recording in Ge.sub.2Sb.sub.2Te.sub.5 Thin Films
Published in Semiconductors (Woodbury, N.Y.) (01-04-2020)“…The current-voltage characteristics measured on Ge.sub.2Sb.sub.2Te.sub.5 thin films in the current mode are studied. The effect of multilevel recording is…”
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7
Carrier drift mobility in porous silicon carbide
Published in Semiconductors (Woodbury, N.Y.) (01-09-2004)Get full text
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8
Carrier transport in porous silicon
Published in Semiconductors (Woodbury, N.Y.) (01-03-2002)Get full text
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9
Composition and structure of resins in lube distillates from West Siberian crudes
Published in Chemistry and technology of fuels and oils (01-02-1994)Get full text
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10
Transient photocurrent and photoluminescence in porous silicon
Published in Semiconductors (Woodbury, N.Y.) (01-10-2003)Get full text
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11
Reversible photoinduced changes in the spectrum of localized states in AsSe films
Published in Semiconductors (Woodbury, N.Y.) (01-01-2005)Get full text
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12
Influence of polyarenes on lubricating properties of oils
Published in Chemistry and technology of fuels and oils (01-03-1989)“…The efficiency of antiwear and antiscoring additives whose molecules contain trichloromethyl group greatly depends on the hydrocarbon composition of the base…”
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13
Effective Control over the Photoelectric Properties of Triphenylamine-containing Polyimides
Published in Semiconductors (Woodbury, N.Y.) (01-06-2001)Get full text
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14
Current-voltage characteristics of thin Ge2Sb2Te5 films taken using a measuring circuit with a current source
Published in Technical physics (01-04-2014)“…The measuring circuit with a voltage generator, which is traditionally used for studying electric properties of glasslike semiconductors, is compared with an…”
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15
Controlling the U −-center density in Se-As chalcogenide-glass semiconductors by doping with metals and halogens
Published in Semiconductors (Woodbury, N.Y.) (01-07-1999)Get full text
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16
Optical and electrical properties of porous gallium arsenide
Published in Semiconductors (Woodbury, N.Y.) (01-01-2000)Get full text
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17
Drift mobility of carriers in porous silicon
Published in Semiconductors (Woodbury, N.Y.) (01-05-2001)Get full text
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18
Transient current in amorphous, porous semiconductor-crystalline semiconductor structures
Published in Semiconductors (Woodbury, N.Y.) (01-02-1998)Get full text
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19
Voltage oscillations in the case of the switching effect in thin layers of Ge–Sb–Te chalcogenides in the current mode
Published in Semiconductors (Woodbury, N.Y.) (01-07-2016)“…The I–V characteristics obtained for layers of chalcogenide vitreous semiconductor of the Ge–Sb–Te system in the current-generator mode are investigated. The…”
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20
Crystal-glass phase transition induced by pulses of electric field in chalcogenide semiconductors
Published in Semiconductors (Woodbury, N.Y.) (01-01-2000)Get full text
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