OES diagnostics as a universal technique to control the Si etching structures profile in ICP

In this work, we demonstrate the high efficiency of optical emission spectroscopy to estimate the etching profile of silicon structures in SF 6 /C 4 F 8 /O 2 plasma. The etching profile is evaluated as a ratio of the emission intensity of the oxygen line (778.1 nm) to the fluorine lines (685.8 nm an...

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Bibliographic Details
Published in:	Scientific reports Vol. 12; no. 1; p. 5287
Main Authors:	Osipov, Artem A., Iankevich, Gleb A., Speshilova, Anastasia B., Gagaeva, Alina E., Osipov, Armenak A., Enns, Yakov B., Kazakin, Alexey N., Endiiarova, Ekaterina V., Belyanov, Ilya A., Ivanov, Viktor I., Alexandrov, Sergey E.
Format:	Journal Article
Language:	English
Published:	London Nature Publishing Group UK 28-03-2022 Nature Publishing Group Nature Portfolio
Subjects:	639/301/1005 639/301/930 Aluminum Emission spectroscopy Etching Humanities and Social Sciences multidisciplinary Science Science (multidisciplinary) Silicon Spectroscopy
Online Access:	Get full text
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Summary:	In this work, we demonstrate the high efficiency of optical emission spectroscopy to estimate the etching profile of silicon structures in SF 6 /C 4 F 8 /O 2 plasma. The etching profile is evaluated as a ratio of the emission intensity of the oxygen line (778.1 nm) to the fluorine lines (685.8 nm and 703.9 nm). It was found that for the creation of directional structures with line sizes from 13 to 100 μm and aspect ratio from ≈ 0.15 to ≈ 5 the optimal intensities ratio is in the range of 2–6, and for structures from 400 to 4000 μm with aspect ratio from ≈ 0.03 to ≈ 0.37 it is in the range 1.5–2. Moreover, the influence of the process parameters on the etching rate of silicon, the etching rate of aluminum, the inclination angle of the profile wall of the etched window, the selectivity of silicon etching with respect to aluminum, and the influence on the overetching (Bowing effect) of the structure was investigated.
Bibliography:	ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23
ISSN:	2045-2322 2045-2322
DOI:	10.1038/s41598-022-09266-x