Search Results - "Kayis, C."

Degradation and phase noise of InAlN/AlN/GaN heterojunction field effect transistors: Implications for hot electron/phonon effects by Zhu, C. Y., Wu, M., Kayis, C., Zhang, F., Li, X., Ferreyra, R. A., Matulionis, A., Avrutin, V., Özgür, Ü., Morkoç, H.

“…In15.7%Al84.3%N/AlN/GaN heterojunction field effect transistors have been electrically stressed under four different bias conditions: on-state-low-field…”
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Scanning-probe spectroscopy of semiconductor donor molecules by Tessmer, S. H, Kuljanishvili, I, Kayis, C, Harrison, J. F, Piermarocchi, C, Kaplan, T. A, Pfeiffer, L. N, West, K. W

“…Semiconductor devices continue to press into the nanoscale regime, and new applications have been proposed for which a single dopant atom acts as the…”
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Window for better reliability of nitride heterostructure field effect transistors by Matulionis, A., Liberis, J., Šermukšnis, E., Ardaravičius, L., Šimukovič, A., Kayis, C., Zhu, C.Y., Ferreyra, R., Avrutin, V., Özgür, Ü., Morkoç, H.

“…Phase-noise technique was applied to monitor channel degradation of nitride heterostructure field effect transistors (HFETs) subjected to a fixed drain voltage…”
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Nanometer-scale capacitance spectroscopy of semiconductor donor molecules by Tessmer, S.H., Kuljanishvili, I., Kayis, C., Harrison, J.F., Piermarocchi, C., Kaplan, T.A.

“…We review recently reported scanned-probe capacitance measurements of electrons entering silicon donors in a gallium-arsenide heterostructure. Single-electron…”
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Degradation in InAlN/AlN/GaN heterostructure field-effect transistors as monitored by low-frequency noise measurements: Hot phonon effects by Kayis, C., Ferreyra, R. A., Wu, M., Li, X., Özgür, Ü., Matulionis, A., Morkoç, H.

“…Low-frequency noise technique was applied to analyze performance of nearly lattice-matched InAlN/AlN/GaN heterostructure field-effect transistors and their…”
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Low-Frequency Noise Measurements of AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors With HfAlO Gate Dielectric by Kayis, C, Leach, J H, Zhu, C Y, Wu, M, Li, X, Özgür, Ümit, Morkoç, H, Yang, X, Misra, V, Handel, P H

“…We report on the low-frequency phase-noise measurements of AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors employing HfAlO as the…”
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Reduction of Flicker Noise in AlGaN/GaN-Based HFETs After High Electric-Field Stress by Congyong Zhu, Kayis, C., Mo Wu, Xing Li, Fan Zhang, Avrutin, V., Ozgur, Umit, Morkoc, H.

“…We report on the evolution of AlGaN/GaN-based heterojunction field-effect transistor (HFET) operation under high-electric-field stress. Specifically, a 10 ~ 15…”
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Review: Nanometer-scale capacitance spectroscopy of semiconductor donor molecules by Tessmer, S H, Kuljanishvili, I, Kayis, C, Harrison, J F, Piermarocchi, C, Kaplan, T A

“…We review recently reported scanned-probe capacitance measurements of electrons entering silicon donors in a gallium-arsenide heterostructure. Single-electron…”
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