Thermoelectric properties of the Kondo semiconductor CeRu4As12 prepared under high pressure

Thermoelectric properties of the Kondo semiconductor CeRu4As12 prepared under high pressure

The thermoelectric properties of the Kondo semiconductor CeRu 4 As 12 with a filled skutterudite-type structure have been studied. The compound CeRu 4 As 12 exhibits a hybridization gap insulating state with a small activation energy of 50 K. We report further results for CeRu 4 As 12 synthesized at...

Full description

Saved in:
Bibliographic Details
Published in:Journal of the Korean Physical Society Vol. 63; no. 3; pp. 359 - 362
Main Authors: Sekine, Chihiro, Kawata, Tomokazu, Kawamura, Yukihiro, Yagi, Takehiko
Format: Journal Article
Language:English
Published: Dordrecht Springer Netherlands 01-08-2013
한국물리학회
Subjects:
Mathematical and Computational Physics
Particle and Nuclear Physics
Physics
Physics and Astronomy
Theoretical
물리학
Seebeck coefficient
Skutterudite
Thermal conductivity
Kondo semiconductor
As
CeRu
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The thermoelectric properties of the Kondo semiconductor CeRu 4 As 12 with a filled skutterudite-type structure have been studied. The compound CeRu 4 As 12 exhibits a hybridization gap insulating state with a small activation energy of 50 K. We report further results for CeRu 4 As 12 synthesized at high temperatures and high pressures. Seebeck-coefficient and thermal-conductivity measurements have been performed on this material. The temperature dependence of the Seebeck coefficient for CeRu 4 As 12 shows two peaks (around 90 K and 280 K). The phenomena could be related to the Kondo behavior at high temperatures and a hybridization gap-formation process at low temperatures.
Bibliography:G704-000411.2013.63.3.022
ISSN:0374-4884
1976-8524
DOI:10.3938/jkps.63.359