Search Results - "Kawanago, T"
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Interface and electrical properties of La-silicate for direct contact of high- k with silicon
Published in Solid-state electronics (01-07-2010)“…Chemical bonding states and electrical characteristics of a La-silicate formed as a compositional transition layer at La 2O 3/Si interface has been examined. A…”
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Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process
Published in Solid-state electronics (01-02-2012)“…► Compensation of oxygen defects in La-silicate dielectrics without EOT increase by oxygen annealing. ► Although the interfacial property is degraded by oxygen…”
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Modeling of the output characteristics of advanced n-MOSFETs after a severe gate-to-channel dielectric breakdown
Published in Microelectronic engineering (01-09-2013)“…[Display omitted] •We model the effects of an oxide breakdown on the transistor behaviour.•We consider the potentiometer model.•We show how the relevant…”
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Selection of rare earth silicates for highly scaled gate dielectrics
Published in Microelectronic engineering (01-10-2010)“…An aggressive equivalent oxide thickness (EOT) scaling with high-k gate dielectrics has been demonstrated by ultra-thin La 2O 3 gate dielectric with a proper…”
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Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate-to-drain dielectric breakdown
Published in Microelectronics and reliability (01-09-2012)“…The gate leakage current in advanced metal gate/high-K (EOT≈0.6nm) nMOSFETs with severe gate-to-drain dielectric breakdown is investigated in detail. Even…”
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Journal Article Conference Proceeding -
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Comparative study of electrical characteristics in (100) and (110) surface-oriented nMOSFETs with direct contact La-silicate/Si interface structure
Published in Solid-state electronics (01-06-2013)“…► Electrical characteristics of (110)-oriented nMOSFETs with a direct contact La-silicate/Si structure are studied. ► Superior interfacial properties on (110)…”
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Journal Article Conference Proceeding -
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Advantage of TiN Schottky gate over conventional Ni for improved electrical characteristics in AlGaN/GaN HEMT
Published in 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC) (01-09-2013)“…Metal induced effects on electrical characteristics in AlGaN/GaN Schottky HEMT are reported. Focus is given to the collapse of drain current attributed to…”
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Conference Proceeding -
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Experimental study of electron mobility characterization in direct contact La-silicate/Si structure based nMOSFETs
Published in Solid-state electronics (01-08-2012)“…► Electron mobility in direct contact La-silicate/Si structure is experimentally studied. ► The electron mobility with La-silicate differs from the SiO2…”
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Experimental study for high effective mobility with directly deposited HfO2/La2O3 MOSFET
Published in Microelectronic engineering (01-07-2009)Get full text
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SrO capping effect for La2O3/Ce-silicate gate dielectrics
Published in Microelectronics and reliability (01-03-2010)Get full text
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Electrical characterization of directly deposited La-Sc oxides complex for gate insulator application
Published in Microelectronic engineering (01-09-2007)“…This study reports the electrical characteristics of La-Sc oxides complex and effect of nitrogen incorporation for applications to high-k gate stack. We found…”
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Journal Article Conference Proceeding -
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Transfer printing infrared light sources based on thermally excited Tamm plasmon polaritons
Published in 2020 45th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) (08-11-2020)“…We report transfer printing infrared light sources based on thermally excited Tamm plasmon polaritons. By using the transfer printing, it is possible to…”
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Conference Proceeding -
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Band bending measurement of HfO2/SiO2/Si capacitor with ultra-thin La2O3 insertion by XPS
Published in Applied surface science (30-07-2008)“…The flat band voltage shifts of HfO2/SiO2/nSi capacitors with ultra-thin La2O3 insertion at HfO2/SiO2 interface have been confirmed using hard X-ray…”
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Optimized oxygen annealing process for Vth tuning of p-MOSFET with high-k/metal gate stacks
Published in 2010 Proceedings of the European Solid State Device Research Conference (01-09-2010)“…A demonstration of V FB /V th tuning has been conducted by optimized annealing in oxygen ambient for direct contact of high-k with Si gate stacks. The amount…”
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Conference Proceeding -
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Direct contact of high-k/Si gate stack for EOT below 0.7 nm using LaCe-silicate Layer with Vfb controllability
Published in 2010 Symposium on VLSI Technology (01-06-2010)“…A direct high-k/Si gate stack has been proposed for gate oxide scaling. With LaCe-silicate, an EOT of 0.64 nm with an average dielectric constant (k av ) of…”
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Conference Proceeding -
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La2O3 gate dielectrics for AlGaN/GaN HEMT
Published in Microelectronics and reliability (01-05-2016)“…The annealing temperature dependent electrical characteristics of La2O3 gate dielectrics for W gated AlGaN/GaN high electron mobility transistors (HEMTs) have…”
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Improved convergence theorems of Newton's method designed for the numerical verification for solutions of differential equations
Published in Journal of computational and applied mathematics (15-02-2007)“…Though the convergence theorem of simplified Newton's method is an excellent general principle for the numerical verification of isolated solutions of…”
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Journal Article Conference Proceeding -
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EOT of 0.62 nm and High Electron Mobility in La-silicate/Si Structure Based nMOSFETs Achieved by Utilizing Metal-Inserted Poly-Si Stacks and Annealing at High Temperature
Published in IEEE transactions on electron devices (01-02-2012)“…This paper reports on the control of the direct-contact La-silicate/Si interface structure with the aim of achieving scaled equivalent oxide thickness (EOT)…”
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Scaling of EOT beyond 0.5nm
Published in 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (01-11-2010)“…In this paper, we report our approaches in realizing EOT of 0.5nm and below with rare earth La 2 O 3 high-k gate dielectric. An EOT of 0.43nm was obtained from…”
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Conference Proceeding