Search Results - "Kawanago, T"

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  1. 1

    Interface and electrical properties of La-silicate for direct contact of high- k with silicon by Kakushima, K., Tachi, K., Adachi, M., Okamoto, K., Sato, S., Song, J., Kawanago, T., Ahmet, P., Tsutsui, K., Sugii, N., Hattori, T., Iwai, H.

    Published in Solid-state electronics (01-07-2010)
    “…Chemical bonding states and electrical characteristics of a La-silicate formed as a compositional transition layer at La 2O 3/Si interface has been examined. A…”
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    Journal Article
  2. 2

    Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process by Kawanago, T., Suzuki, T., Lee, Y., Kakushima, K., Ahmet, P., Tsutsui, K., Nishiyama, A., Sugii, N., Natori, K., Hattori, T., Iwai, H.

    Published in Solid-state electronics (01-02-2012)
    “…► Compensation of oxygen defects in La-silicate dielectrics without EOT increase by oxygen annealing. ► Although the interfacial property is degraded by oxygen…”
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    Journal Article
  3. 3

    Modeling of the output characteristics of advanced n-MOSFETs after a severe gate-to-channel dielectric breakdown by Miranda, E., Kawanago, T., Kakushima, K., Suñé, J., Iwai, H.

    Published in Microelectronic engineering (01-09-2013)
    “…[Display omitted] •We model the effects of an oxide breakdown on the transistor behaviour.•We consider the potentiometer model.•We show how the relevant…”
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    Journal Article
  4. 4

    Selection of rare earth silicates for highly scaled gate dielectrics by Kakushima, K., Okamoto, K., Koyanagi, T., Kouda, M., Tachi, K., Kawanago, T., Song, J., Ahmet, P., Tsutsui, K., Sugii, N., Hattori, T., Iwai, H.

    Published in Microelectronic engineering (01-10-2010)
    “…An aggressive equivalent oxide thickness (EOT) scaling with high-k gate dielectrics has been demonstrated by ultra-thin La 2O 3 gate dielectric with a proper…”
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    Journal Article
  5. 5

    Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate-to-drain dielectric breakdown by Miranda, E., Kawanago, T., Kakushima, K., Suñé, J., Iwai, H.

    Published in Microelectronics and reliability (01-09-2012)
    “…The gate leakage current in advanced metal gate/high-K (EOT≈0.6nm) nMOSFETs with severe gate-to-drain dielectric breakdown is investigated in detail. Even…”
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    Journal Article Conference Proceeding
  6. 6

    Comparative study of electrical characteristics in (100) and (110) surface-oriented nMOSFETs with direct contact La-silicate/Si interface structure by Kawanago, T., Kakushima, K., Ahmet, P., Kataoka, Y., Nishiyama, A., Sugii, N., Tsutsui, K., Natori, K., Hattori, T., Iwai, H.

    Published in Solid-state electronics (01-06-2013)
    “…► Electrical characteristics of (110)-oriented nMOSFETs with a direct contact La-silicate/Si structure are studied. ► Superior interfacial properties on (110)…”
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    Journal Article Conference Proceeding
  7. 7

    Advantage of TiN Schottky gate over conventional Ni for improved electrical characteristics in AlGaN/GaN HEMT by Kawanago, T., Kakushima, K., Kataoka, Y., Nishiyama, A., Sugii, N., Wakabayashi, H., Tsutsui, K., Natori, K., Iwai, H.

    “…Metal induced effects on electrical characteristics in AlGaN/GaN Schottky HEMT are reported. Focus is given to the collapse of drain current attributed to…”
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    Conference Proceeding
  8. 8

    Experimental study of electron mobility characterization in direct contact La-silicate/Si structure based nMOSFETs by Kawanago, T., Lee, Y., Kakushima, K., Ahmet, P., Tsutsui, K., Nishiyama, A., Sugii, N., Natori, K., Hattori, T., Iwai, H.

    Published in Solid-state electronics (01-08-2012)
    “…► Electron mobility in direct contact La-silicate/Si structure is experimentally studied. ► The electron mobility with La-silicate differs from the SiO2…”
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    Journal Article
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    Electrical characterization of directly deposited La-Sc oxides complex for gate insulator application by Kawanago, T., Tachi, K., Song, J., Kakushima, K., Ahmet, P., Tsutsui, K., Sugii, N., Hattori, T., Iwai, H.

    Published in Microelectronic engineering (01-09-2007)
    “…This study reports the electrical characteristics of La-Sc oxides complex and effect of nitrogen incorporation for applications to high-k gate stack. We found…”
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    Journal Article Conference Proceeding
  12. 12

    Transfer printing infrared light sources based on thermally excited Tamm plasmon polaritons by Miura, K., Sugaya, T., Kawanago, T., Kawano, Y.

    “…We report transfer printing infrared light sources based on thermally excited Tamm plasmon polaritons. By using the transfer printing, it is possible to…”
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    Conference Proceeding
  13. 13

    Band bending measurement of HfO2/SiO2/Si capacitor with ultra-thin La2O3 insertion by XPS by KAKUSHIMA, K, OKAMOTO, K, HATTORI, T, IWAI, H, ADACHI, M, TACHI, K, SONG, J, SATO, S, KAWANAGO, T, AHMET, P, TSUTSUI, K, SUGII, N

    Published in Applied surface science (30-07-2008)
    “…The flat band voltage shifts of HfO2/SiO2/nSi capacitors with ultra-thin La2O3 insertion at HfO2/SiO2 interface have been confirmed using hard X-ray…”
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    Conference Proceeding Journal Article
  14. 14

    Optimized oxygen annealing process for Vth tuning of p-MOSFET with high-k/metal gate stacks by Kawanago, T, Lee, Y, Kakushima, K, Ahmet, P, Tsutsui, K, Nishiyama, A, Sugii, N, Natori, K, Hattori, T, Iwai, H

    “…A demonstration of V FB /V th tuning has been conducted by optimized annealing in oxygen ambient for direct contact of high-k with Si gate stacks. The amount…”
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    Conference Proceeding
  15. 15

    Direct contact of high-k/Si gate stack for EOT below 0.7 nm using LaCe-silicate Layer with Vfb controllability by Kakushima, K, Koyanagi, T, Kitayama, D, Kouda, M, Song, J, Kawanago, T, Mamatrishat, M, Tachi, K, Bera, M K, Ahmet, P, Nohira, H, Tsutsui, K, Nishiyama, A, Sugii, N, Natori, K, Hattori, T, Yamada, K, Iwai, H

    Published in 2010 Symposium on VLSI Technology (01-06-2010)
    “…A direct high-k/Si gate stack has been proposed for gate oxide scaling. With LaCe-silicate, an EOT of 0.64 nm with an average dielectric constant (k av ) of…”
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    Conference Proceeding
  16. 16

    La2O3 gate dielectrics for AlGaN/GaN HEMT by Chen, J., Kawanago, T., Wakabayashi, H., Tsutsui, K., Iwai, H., Nohata, D., Nohira, H., Kakushima, K.

    Published in Microelectronics and reliability (01-05-2016)
    “…The annealing temperature dependent electrical characteristics of La2O3 gate dielectrics for W gated AlGaN/GaN high electron mobility transistors (HEMTs) have…”
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    Journal Article
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    Improved convergence theorems of Newton's method designed for the numerical verification for solutions of differential equations by Kawanago, Tadashi

    “…Though the convergence theorem of simplified Newton's method is an excellent general principle for the numerical verification of isolated solutions of…”
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    Journal Article Conference Proceeding
  19. 19

    EOT of 0.62 nm and High Electron Mobility in La-silicate/Si Structure Based nMOSFETs Achieved by Utilizing Metal-Inserted Poly-Si Stacks and Annealing at High Temperature by Kawanago, T., Yeonghun Lee, Kakushima, K., Ahmet, P., Tsutsui, K., Nishiyama, A., Sugii, N., Natori, K., Hattori, T., Iwai, H.

    Published in IEEE transactions on electron devices (01-02-2012)
    “…This paper reports on the control of the direct-contact La-silicate/Si interface structure with the aim of achieving scaled equivalent oxide thickness (EOT)…”
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    Journal Article
  20. 20

    Scaling of EOT beyond 0.5nm by Ahmet, P, Kitayama, D, Kaneda, T, Suzuki, T, Koyanagi, T, Kouda, M, Mamatrishat, M, Kawanago, T, Kakushima, K, Iwai, H

    “…In this paper, we report our approaches in realizing EOT of 0.5nm and below with rare earth La 2 O 3 high-k gate dielectric. An EOT of 0.43nm was obtained from…”
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    Conference Proceeding