Search Results - "Kaviani, Moloud"
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Formation of NV centers in diamond: A theoretical study based on calculated transitions and migration of nitrogen and vacancy related defects
Published in Physical review. B, Condensed matter and materials physics (04-02-2014)“…Formation and excitation energies as well charge transition levels are determined for the substitutional nitrogen (N sub(s)), the vacancy (V), and related…”
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Proper Surface Termination for Luminescent Near-Surface NV Centers in Diamond
Published in Nano letters (13-08-2014)“…By accurate quantum mechanical simulations, we show that typical diamond surfaces possess image states with sub-bandgap energies, and compromise the…”
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3
Defect creation in amorphous HfO2 facilitated by hole and electron injection
Published in Microelectronic engineering (25-06-2017)“…Using Density Functional Theory (DFT) calculations we modeled the mechanisms of formation of oxygen vacancies and interstitial ions in amorphous HfO2 under…”
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Rational design of nanosystems for simultaneous drug delivery and photodynamic therapy by quantum mechanical modeling
Published in Nanoscale (07-09-2019)“…Drug delivery systems are based on reversible interactions between carriers and drugs. Spacers are often introduced to tailor the type of interaction and to…”
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Unraveling Dynamical and Light Effects on Functionalized Titanium Dioxide Nanoparticles for Bioconjugation
Published in Journal of physical chemistry. C (18-04-2019)“…Functionalizing nanoparticles (NPs) with biological molecules is a promising modern strategy in bionanotechnology to build up smart bioinorganic devices for…”
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6
Hole trapping in amorphous HfO2 and Al2O3 as a source of positive charging
Published in Microelectronic engineering (25-06-2017)“…Density Functional Theory (DFT) calculations demonstrate that holes can trap in crystalline and amorphous HfO2 and Al2O3 in both single- and bipolaron states…”
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Top‐Layer Engineering Reshapes Charge Transfer at Polar Oxide Interfaces
Published in Advanced materials (Weinheim) (01-09-2022)“…Charge‐transfer phenomena at heterointerfaces are a promising pathway to engineer functionalities absent in bulk materials but can also lead to degraded…”
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Defect creation in amorphous HfO^sub 2^ facilitated by hole and electron injection
Published in Microelectronic engineering (25-06-2017)“…Using Density Functional Theory (DFT) calculations we modeled the mechanisms of formation of oxygen vacancies and interstitial ions in amorphous HfO2 under…”
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9
Top‐Layer Engineering Reshapes Charge Transfer at Polar Oxide Interfaces
Published in Advanced materials (Weinheim) (07-08-2022)“…Abstract Charge‐transfer phenomena at heterointerfaces are a promising pathway to engineer functionalities absent in bulk materials but can also lead to…”
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Hole trapping in amorphous HfO^sub 2^ and Al^sub 2^O^sub 3^ as a source of positive charging
Published in Microelectronic engineering (25-06-2017)“…Density Functional Theory (DFT) calculations demonstrate that holes can trap in crystalline and amorphous HfO2 and Al2O3 in both single- and bipolaron states…”
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11
How small nanodiamonds can be? MD study of the stability against graphitization
Published in Diamond and related materials (01-03-2013)“…How small nanodiamonds can be is a crucial question for biomedical applications. To answer this question, we present here molecular dynamic simulations of the…”
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Ferrimagnetism induced by thermal vibrations in oxygen-deficient manganite heterostructures
Published 07-05-2024“…Super-exchange most often leads to antiferromagnetim in transition-metal perovskite oxides, yet ferromagnetism or ferrimagnetism would be preferred for many…”
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Surface and interface effects in oxygen deficient SrMnO$_3$ thin films grown on SrTiO$_3
Published 19-02-2021“…Complex oxide functionality, such as ferroelectricity, magnetism or superconductivity is often achieved in epitaxial thin-film geometries. Oxygen vacancies…”
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Publisher's Note: Formation of NV centers in diamond: A theoretical study based on calculated transitions and migration of nitrogen and vacancy related defects [Phys. Rev. B 89 , 075203 (2014)]
Published in Physical review. B, Condensed matter and materials physics (27-02-2014)Get full text
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Disorder-induced electron and hole trapping in amorphous TiO2
Published 17-07-2020“…Phys. Rev. B 102, 054205 (2020) Thin films of amorphous (a)-TiO2 are ubiquitous as photocatalysts, protective coatings, photoanodes and in memory application,…”
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Calculation ofthe transitions and migration of nitrogen and vacancy related defects,with implications on the formation of NV centers in bulk diamond
Published 26-11-2013“…Formation and excitation energies as well charge transition levels, are determined forthe substitutional nitrogen (Ns),the vacancy (V) and related point…”
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