Search Results - "Kavasoglu, A. Sertap"
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Design and implementation of a low-cost multi-channel temperature measurement system for photovoltaic modules
Published in Measurement : journal of the International Measurement Confederation (01-07-2012)“…► A low-cost computer-controlled temperature measurement setup has been developed. ► The data obtained were found to be reproducible and reliable. ► The…”
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Metal–semiconductor transition in undoped ZnO films deposited by spray pyrolysis
Published in Physica. B, Condensed matter (01-08-2008)“…ZnO films were deposited on glass substrate by using spray pyrolysis method. Films were deposited at different solution molarities 0.02 and 0.1 M. The films…”
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3
Intensity modulated short circuit current spectroscopy for solar cells
Published in Solar energy materials and solar cells (01-02-2011)“…Understanding charge separation and transport is momentously important for the rectification of solar cell performance. To probe photo-generated carrier…”
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4
I–V–T analysing an inhomogeneous Au/Poly(4-vinyl phenol)/p-Si structure with a double Gaussian distribution of barrier heights
Published in Journal of sol-gel science and technology (01-04-2011)“…In this study, the current–voltage (I – V) characteristics of Au/Poly(4-vinyl phenol)/p-Si structures have been measured over a wide temperature range…”
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5
Electrical characterization of a-Si:H(n)/c-Si(p) structure
Published in Journal of alloys and compounds (29-09-2011)“…► We have fabricated the state of art heterojunction diode structure. ► Interface state density of the device values vary between 10 14 eV −1 cm −2 and 10 13…”
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6
Tunnelling enhanced recombination in polycrystalline CdS/CdTe and CdS/Cu(In,Ga)Se2 heterojunction solar cells
Published in Solid-state electronics (01-06-2005)“…This article investigates the results of current–voltage measurements made at different temperatures on vacuum deposited ZnO/CdS/Cu(In,Ga)Se2 and CdS/CdTe…”
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7
Negative capacitance peculiarities in a-Si:H/c-Si rectifier structure
Published in Microelectronic engineering (01-02-2010)“…Nontrivial negative capacitance (NC) effect, observed in a-Si:H/c-Si heterostructure devices, is discussed emphasizing the theoretical interpretation of…”
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8
Application of Beta model to heterojunction structure
Published in Current applied physics (01-09-2009)“…The diode ideality factor is an important parameter in the description of device’s electrical behavior. Our goal in this work is to find a practical procedure…”
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The illustrated brief application of defect distribution model for heterojunction device by admittance spectroscopy
Published in Journal of alloys and compounds (15-05-2012)“…► Admittance data are used to determine shallow or deep energy levels in heterojunction device. ► We have suggested new equivalent circuit for heterojunction…”
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10
The analysis of the charge transport mechanism of n-Si/MEH-PPV device structure using forward bias I– V– T characteristics
Published in Journal of alloys and compounds (04-03-2010)“…In this study, temperature dependent current–voltage ( I– V) measurements and investigation of the dc current transport mechanism of n-Si/MEH-PPV device have…”
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11
Fabrication and electrical characterization of Al/diazo compound containing polyoxy chain/p-Si device structure
Published in Physica. B, Condensed matter (01-03-2013)“…Diazo-compounds are important class of chemical compounds in terms of optical and electronic properties which make them potentially attractive for device…”
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12
Study of CdS/Cu(In,Ga)Se2 heterojunction interface using admittance and impedance spectroscopy
Published in Solar energy (01-09-2006)Get full text
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13
Electrical characterization of Au/Pd/n-GaN/Pd/Au device structure in the radio frequency range by simulation study
Published in Synthetic metals (01-07-2011)“…► Au/Pd/n-GaN/Pd/Au device structure have been studied by simulation software. The software has been developed by our group. ► The anomalous peaks in the C–V…”
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14
Admittance spectroscopy of spray-pyrolyzed ZnO film
Published in Physica. B, Condensed matter (01-09-2008)“…A ZnO film was deposited using the spray pyrolysis method. The admittance spectroscopy method was used to establish the contributions to electrical behavior…”
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15
The circuit point of view of the temperature dependent open circuit voltage decay of the solar cell
Published in Solar energy (01-09-2009)“…The open circuit voltage decay (OCVD) technique has been used to determine the minority carrier lifetime. In this study, an experimental and analytical method…”
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16
A new method of diode ideality factor extraction from dark I–V curve
Published in Current applied physics (01-07-2009)“…Most of the techniques have been developed to extract diode ideality factor utilize the one-exponential diode model. However, for a correct description of two…”
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17
Room-temperature interface state analysis of Au/Poly(4-vinyl phenol)/p-Si structure
Published in Synthetic metals (01-09-2009)“…The Poly(4-vinyl phenol) insulator layer was grown by spin coating technique onto p-Si substrate. Diode ideality factor (n), insulator layer thickness (δ),…”
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AFORS-HET simulation for investigating the performance of ZnO/n-CdS/p-CdTe /Ag solar cell depending on CdTe acceptor concentration and temperature
Published in Physica. B, Condensed matter (15-01-2023)“…In this study, a single junction dc photovoltaic solar cell simulation was carried out. ZnO/n-CdS/p-CdTe/Ag cell properties were investigated through the…”
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Study of CdS/Cu(In, Ga)Se 2 heterojunction interface using admittance and impedance spectroscopy
Published in Solar energy (2006)“…The interface properties of an unusual CdS/Cu(In, Ga)Se 2 solar cell have been studied by admittance and impedance spectroscopy. The current transport in this…”
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20
Simulation for capacitance correction from Nyquist plot of complex impedance–voltage characteristics
Published in Solid-state electronics (01-06-2008)“…The impression of series resistance on unipolar semiconductor device’s capacitance–voltage spectrum is discussed by conventional impedance and admittance…”
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