Search Results - "Kaufel, G."

GaSb -based 2.X μ m quantum-well diode lasers with low beam divergence and high output power by Rattunde, M., Schmitz, J., Kaufel, G., Kelemen, M., Weber, J., Wagner, J.

“…We report on GaSb -based 2 . X μ m diode lasers with an improved waveguide design, leading to a reduced beam divergence in the fast axis of 44 ° full width at…”
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14xx-nm high brightness tapered diode lasers grown by solid-source MBE by Kallenbach, S., Aidam, R., Losch, R., Kaufel, G., Kelemen, M.T., Mikulla, M., Weimann, G.

“…We demonstrate a 1470-nm InGaAsP high-power tapered diode laser grown by all solid-source molecular beam epitaxy. Devices compare well to metal-organic vapor…”
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Short-Pulse High-Power Operation of GaSb-Based Diode Lasers by Muller, M., Rattunde, M., Kaufel, G., Schmitz, J., Wagner, J.

“…We report on the short-pulse high-power operation of GaSb-based diode lasers emitting in the 1.95- to 2.2-mum wavelength range. Both epi-side-down mounted…”
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High-power 1.9-μm diode laser arrays with reduced far-field angle by Kelemen, M.T., Weber, J., Rattunde, M., Kaufel, G., Schmitz, J., Moritz, R., Mikulla, M., Wagner, J.

“…High-power 1.91-mum (AlGaIn)(AsSb) quantum-well diode laser single emitters and linear arrays with improved waveguide design were fabricated and characterized…”
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GaSb-based tapered diode lasers at 1.93 [mu]m with 1.5-W nearly diffraction-limited power by C. Pfahler, C. Pfahler, G. Kaufel, G. Kaufel, M.T. Kelemen, M.T. Kelemen, M. Mikulla, M. Mikulla, M. Rattunde, M. Rattunde, J. Schmitz, J. Schmitz, J. Wagner, J. Wagner

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Widely Tunable Micro-Mechanical External-Cavity Diode Laser Emitting Around 2.1 \mu m by Geerlings, E., Rattunde, M., Schmitz, J., Kaufel, G., Wagner, J., Blasi, B., Kallweit, D., Zappe, H.

“…A widely tunable (Deltalambda/lambda = 7%) micro-mechanical external cavity GaSb-based diode laser (muECL) emitting around 2.1 mum is presented. A…”
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GaSb-based tapered diode lasers at 1.93 μm with 1.5-W nearly diffraction-limited power by Pfahler, C., Kaufel, G., Kelemen, M.T., Mikulla, M., Rattunde, M., Schmitz, J., Wagner, J.

“…High-power high-brightness 1.93-μm wavelength (AlGaIn)(AsSb) tapered diode lasers with a narrow vertical waveguide design are reported for the first time. A…”
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Continuous-wave operation of GaInAs-AlGaAsSb quantum cascade lasers by Yang, Q., Bronner, W., Manz, C., Moritz, R., Mann, Ch, Kaufel, G., Kohler, K., Wagner, J.

“…We report on the demonstration of continuous-wave (CW) operation of GaInAs-AlGaAsSb quantum cascade (QC) lasers. By placing a 2.5-μm-thick gold layer on both…”
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Modulator driver and photoreceiver for 20 Gb/s optic-fiber links by Zhihao Lao, Hurm, V., Thiede, A., Berroth, M., Ludwig, M., Lienhart, H., Schlechtweg, M., Hornung, J., Bronner, W., Kohler, K., Hulsmann, A., Kaufel, G., Jakobus, T.

“…Two integrated circuits, a modulator driver and a photoreceiver integrating a metal-semiconductor-metal (MSM) photodetector, a differential transimpedance…”
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Plasma etching damage in GaAs studied by resonant Raman scattering by PLETSCHEN, W, WAGNER, J, KAUFEL, G, KOHLER, K

“…We have used resonant Raman scattering by longitudinal optical (LO) phonons to study the effect of reactive ion etching (RIE) in a CHF3 plasma on n-type GaAs…”
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E-beam direct-write in a dry-etched recess gate HEMT process for GaAs/AlGaAs circuits by HÜLSMANN, A, KAUFEL, G, KÖHLER, K, RAYNOR, B, SCHNEIDER, J, JAKOBUS, T

“…We developed a technology to fabricate enhancement and depletion high electron mobility transistors (E- and D-HEMTs) with sub-0.5 µm gatelengths using e-beam…”
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Mixed signal integrated circuits based on GaAs HEMTs by Thiede, A., Zhi-Gong, Schlechtweg, M., Lang, M., Leber, P., Zhihao Lao, Nowotny, U., Hurm, V., Rieger-Motzer, M., Ludwig, M., Sedler, M., Kohler, K., Bronner, W., Hornung, J., Hulsmann, A., Kaufel, G., Raynor, B., Schneider, J., Jakobus, T., Schroth, J., Berroth, M.

“…During the past five years numerous mixed signal integrated circuits (ICs) have been designed, processed, and characterized based on our 0.2 /spl mu/m gate…”
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Hemt circuits for signal/data processing by Berroth, M., Hurm, V., Lang, M., Lao, Z., Thiede, A., Wang, Z.-G., Bangert, A., Bronner, W., Hülsmann, A., Kaufel, G., Köhler, K., Raynor, B., Jakobus, T.

“…HEMT devices exhibit excellent figures of merit for high frequency operation. Therefore they are strong candidates for high speed signal and data processing…”
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Widely Tunable GaSb-Based External Cavity Diode Laser Emitting Around 2.3$mu$m by Geerlings, E., Rattunde, M., Schmitz, J., Kaufel, G., Zappe, H., Wagner, J.

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10 GB/s bit-synchronizer circuit with automatic timing alignment by clock phase shifting using quantum-well AlGaAs/GaAs/AlGaAs by Wennekers, P., Novotny, U., Huelsmann, A., Kaufel, G., Koehler, K., Raynor, B., Schneider, J.

“…A bit-synchronizer circuit is presented which operated up to a bit rate of Gb/s. The circuit comprises two master-slave flip -flops for data sampling, two…”
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Lithographic and pattern transfer of a novel deep-UV photoresist: ARCH2 by Falcigno, P., Münzel, N., Holzwarth, H., Schacht, H.-T., Mertesdorf, C., Bronner, W., Kaufel, G., Timko, A., Nalamasu, O.

“…We have developed a novel chemically amplified deep-UV photoresist called ARCH2. ARCH2 displays a resolution of<0.23μm with a DOF of 1.0μm at 0.25μm. This…”
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GaSb-based 2.3 μm quantum-well diode-lasers with low beam divergence by RATTUNDE, M, SCHMITZ, J, KAUFEL, G, WAGNER, J

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Widely Tunable Micro-Mechanical External-Cavity Diode Laser Emitting Around 2.1 [Formula Omitted]m by Geerlings, E, Rattunde, M, Schmitz, J, Kaufel, G, Wagner, J, Blasi, B, Kallweit, D, Zappe, H

“…A widely tunable (Deltalambda/lambda = 7%) micro-mechanical external cavity GaSb-based diode laser (muECL) emitting around 2.1 mum is presented. A…”
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10 Gb/s monolithic integrated MSM-photodiode AlGaAs/GaAs-HEMT optoelectronic receiver by Hurm, V., Rosenzweig, J., Ludwig, M., Benz, W., Osorio, R., Berroth, M., Hulsmann, A., Kaufel, G., Kohler, K., Raynor, B., Schneider, J.

“…Summary form only given. A photoreceiver based on a metal-semiconductor-metal (MSM) photodiode and AlGaAs/GaAs HEMTs is presented. The photoreceiver was…”
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Gain saturation and high-power pulsed operation of GaSb-based tapered diode lasers with separately contacted ridge and tapered section by Pfahler, C., Eichhorn, M., Kelemen, M. T., Kaufel, G., Mikulla, M., Schmitz, J., Wagner, J.

“…(AlGaIn)(AsSb) ridge-waveguide tapered diode lasers with separately contacted ridge and tapered sections, emitting at 1.93 μ m , have been analyzed in pulsed…”
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