Search Results - "Kattelus, H"

Electrically tunable surface micromachined Fabry–Perot interferometer for visible light by Blomberg, M., Kattelus, H., Miranto, A.

“…We present a new kind of electrostatically tunable surface micromachined Fabry–Perot interferometer (FPI) structure and a process flow which was successfully…”
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A 12 MHz micromechanical bulk acoustic mode oscillator by Mattila, T., Kiihamäki, J., Lamminmäki, T., Jaakkola, O., Rantakari, P., Oja, A., Seppä, H., Kattelus, H., Tittonen, I.

“…We demonstrate a bulk acoustic mode silicon micromechanical resonator with the first eigen frequency at 12 MHz and the quality factor 180 000. Electrostatic…”
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Silicon full wafer bonding with atomic layer deposited titanium dioxide and aluminum oxide intermediate films by Puurunen, R.L., Suni, T., Ylivaara, O.M.E., Kondo, H., Ammar, M., Ishida, T., Fujita, H., Bosseboeuf, A., Zaima, S., Kattelus, H.

“…Silicon-on-insulator (SOI) wafers made by direct wafer bonding are widely used as starting substrates for microelectromechanical systems (MEMS) fabrication…”
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Reducing stiction in microelectromechanical systems by rough nanometer-scale films grown by atomic layer deposition by Puurunen, R.L., Häärä, A., Saloniemi, H., Dekker, J., Kainlauri, M., Pohjonen, H., Suni, T., Kiihamäki, J., Santala, E., Leskelä, M., Kattelus, H.

“…Atomic layer deposition (ALD) can be used to grow pinhole-free nanometer-thin conformal inorganic films at low temperatures, making it of interest for many…”
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Thin film absorbers for visible, near-infrared, and short-wavelength infrared spectra by Laamanen, M., Blomberg, M., Puurunen, R.L., Miranto, A., Kattelus, H.

“…Two thin film absorbers are presented in this paper: one for the visible (VIS) and the near-infrared (NIR) spectra in the wavelength range of 350…1000 nm, the…”
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Amorphous Mo-N and Mo-Si-N films in microelectromechanical systems by KATTELUS, H., YLÖNEN, M., BLOMBERG, M.

“…ABSTRACT Micromachining based on metallic structural material possesses several inherent advantages. Metallic thin films can be deposited at room temperature…”
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Stress control of sputter-deposited Mo-N films for micromechanical applications by KATTELUS, H, KOSKENALA, J, NURMELA, A, NISKANEN, A

“…Sputter-deposited metallic thin films are attractive materials for micromechanics but they suffer from large stress variations within the batch or even a…”
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Depth and profile control in plasma etched MEMS structures by Kiihamäki, J., Kattelus, H., Karttunen, J., Franssila, S.

“…We have achieved uniform etched depth regardless of feature size by employing a combination of anisotropic plasma etching in inductively coupled plasma (ICP)…”
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14 MHz micromechanical oscillator by Mattila, T., Jaakkola, O., Kiihamäki, J., Karttunen, J., Lamminmäki, T., Rantakari, P., Oja, A., Seppä, H., Kattelus, H., Tittonen, I.

“…Operation of a 14 MHz micromechanical oscillator is demonstrated and analyzed. Single-crystal silicon microbridge with submicron electrode gaps is utilized as…”
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Low-temperature bonding of thick-film polysilicon for microelectromechanical system (MEMS) by LUOTO, H, SUNI, T, KULAWSKI, M, HENTTINEN, K, KATTELUS, H

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“Plug-up”–a new concept for fabricating SOI MEMS devices by Kiihamäki, J., Dekker, J., Pekko, P., Kattelus, H., Sillanpää, T., Mattila, T.

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Potential of amorphous Mo–Si–N films for nanoelectronic applications by Ylönen, M., Kattelus, H., Savin, A., Kivinen, P., Haatainen, T., Ahopelto, J.

“…The properties of amorphous metallic molybdenum–silicon–nitrogen (Mo–Si–N) films were characterised for use in nanoelectronic applications. The films were…”
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Plug-up: a new concept for fabricating SOI MEMS devices by KIIHAMÄKI, J, DEKKER, J, PEKKO, P, KATTELUS, H, SILLANPÄÄ, T, MANILA, T

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A batch process to deposit amorphous metallic Mo-Si-N films by KATTELUS, H, HEIKKINEN, H, HÄÄRÄ, A, YLÖNEN, M, TOLKKI, A

“…A process for depositing amorphous electrically conducting Mo-Si-N films in a batch-type reactive sputtering system has been developed. Each elemental…”
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Reduction of molybdenum resistivity by a seed layer of TiW by Franssila, S., Kattelus, H., Nykänen, E.

“…A seed layer of TiW reduces the resistivity of sputter deposited molybdenum by up to 50%. With interposed TiW, molybdenum resistivity is constant at ca. 9 μΩ…”
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RF-model extraction for passive components on MCM-Si materials by Ronkainen, H, Riihisaari, T, Kattelus, H

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Sputtered W-N diffusion barriers by Kattelus, H. P., Kolawa, E., Affolter, K., Nicolet, M.-A.

“…The thermal stability of reactively sputtered tungsten-nitrogen alloy thin films is investigated for the application as diffusion barriers in silicon contact…”
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Crystallization and oxidation behavior of Mo-Si-N coatings by Hirvonen, J.-P., Suni, I., Kattelus, H., Lappalainen, R., Torri, P., Kung, H., Jervis, T.R., Nastasi, M., Tesmer, J.R.

“…Mo-Si-N coatings with different nitrogen concentrations were produced by nitrogen alloying simultaneously during sputter deposition from a planar magnetron…”
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Process alternatives for manufacturing integrated inductors by Riihisaari, T, Kattelus, H, Tarvainen, E

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Planar inductors on silicon for integrated RF circuits by Tarvainen, E, Ronkainen, H, Kattelus, H, Riihisaari, T, Kuivalainen, P

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