Search Results - "Katsushi, Fujii"

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  1. 1

    Distributed control of a user-on-demand renewable-energy power-source system using battery and hydrogen hybrid energy-storage devices by Yamashita, Daiji, Tsuno, Katsuhiko, Koike, Kayo, Fujii, Katsushi, Wada, Satoshi, Sugiyama, Masakazu

    Published in International journal of hydrogen energy (18-10-2019)
    “…A user-on-demand power source based on renewable energy requires storage devices to balance power sources and power demands because of the fluctuation of power…”
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    Journal Article
  2. 2

    Electrochemical CO2 Reduction Using Gas Diffusion Electrode Loading Ni-doped Covalent Triazine Frameworks in Acidic Electrolytes by WU, Yuxin, KAMIYA, Kazuhide, HASHIMOTO, Takuya, SUGIMOTO, Rino, HARADA, Takashi, FUJII, Katsushi, NAKANISHI, Shuji

    Published in Denki kagaku oyobi kōgyō butsuri kagaku (05-09-2020)
    “…Ni-doped covalent triazine frameworks (Ni-CTF) has been known as an efficient electrocatalysts that achieve conversion of carbon dioxide (CO2) to carbon…”
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    Journal Article
  3. 3

    Effects of Ag Nanoparticle Coated Metal Electrodes on Electrochemical CO2 Reduction in Aqueous KHCO3 by KOIKE, Kayo, NARA, Miyuki, FUKUSHIMA, Minori, BAE, Hyojung, HA, Jun-Seok, FUJII, Katsushi, WADA, Satoshi

    Published in Denki kagaku oyobi kōgyō butsuri kagaku (25-03-2022)
    “…Electrochemical CO2 reduction is crucial for developing a sustainable closed-carbon-cycle society; however, the factors determining product selectivity have…”
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    Journal Article
  4. 4

    Low-temperature growth of AlN and GaN by metal organic vapor phase epitaxy for polarization engineered water splitting photocathode by Nakamura, Akihiro, Suzuki, Michihiro, Fujii, Katsushi, Nakano, Yoshiaki, Sugiyama, Masakazu

    Published in Journal of crystal growth (15-04-2017)
    “…Crystal properties of low-temperature grown AlN (LT-AlN) combined with low temperature GaN (LT-GaN) grown by metal organic vapor phase epitaxy (MOVPE) were…”
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    Journal Article
  5. 5

    Analysis of the Gas Phase Kinetics Active during GaN Deposition from NH3 and Ga(CH3)3 by Ravasio, Stefano, Momose, Takeshi, Fujii, Katsushi, Shimogaki, Yukihiro, Sugiyama, Masakazu, Cavallotti, Carlo

    “…The results of a systematic investigation aimed at determining the dominant gas phase chemistry active during GaN MOVPE are reported and discussed in this…”
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    Journal Article
  6. 6

    Structural changes in the S3 state of the oxygen evolving complex in photosystem II by Hatakeyama, Makoto, Ogata, Koji, Fujii, Katsushi, Yachandra, Vittal K., Yano, Junko, Nakamura, Shinichiro

    Published in Chemical physics letters (01-05-2016)
    “…[Display omitted] •The S3 state of the Mn4CaO5-cluster in photosystem II was investigated by DFT.•The S3 state structure consisting of only 2.7–2.8Å MnMn…”
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    Journal Article
  7. 7

    Highly Efficient Electrocatalytic Hydrogen Production over Carbon Nanotubes Loaded with Platinum Nanoparticles Using Solution Processing by Metawea, Osama R. M., Nara, Miyuki, Murakami, Takeharu, Wada, Satoshi, Fujii, Katsushi, Ito, Yoshihiro, Kawamoto, Masuki

    Published in Advanced materials interfaces (01-05-2023)
    “…Proton exchange membrane (PEM) electrolyzers are used for hydrogen (H2) production by water electrolysis. The commercial cathodic electrocatalyst for this…”
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    Journal Article
  8. 8
  9. 9

    Electroactive species study in the electrochemical reduction of CO2 in KHCO3 solution at elevated temperature by Zhong, Heng, Fujii, Katsushi, Nakano, Yoshiaki

    Published in Journal of energy chemistry (01-05-2016)
    “…Photoelectrochemical and electrochemical reduction of CO2 into organic chemicals is promising for directly or indirectly transforming solar energy into…”
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    Journal Article
  10. 10

    Photoelectrochemical Properties of the p−n Junction in and near the Surface Depletion Region of n-Type GaN by Fujii, Katsushi, Ono, Masato, Iwaki, Yasuhiro, Sato, Keiichi, Ohkawa, Kazuhiro, Yao, Takafumi

    Published in Journal of physical chemistry. C (30-12-2010)
    “…Photoelectrochemical water splitting is expecting a new energy source to produce hydrogen from water. The photoilluminated electrode using a uniform…”
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    Journal Article
  11. 11

    Hydrogen Gas Generation by Splitting Aqueous Water Using n-Type GaN Photoelectrode with Anodic Oxidation by Fujii, Katsushi, Karasawa, Takeshi, Ohkawa, Kazuhiro

    Published in Japanese Journal of Applied Physics (01-01-2005)
    “…Hydrogen gas generation from a counterelectrode was clearly observed for the first time using light-illuminated n-type GaN as a working photoelectrode in an…”
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    Journal Article
  12. 12

    The Fabrication of Vertical Light-Emitting Diodes Using Chemical Lift-Off Process by Jun-Seok Ha, Lee, S.W., Hyun-Jae Lee, Lee Hyo-Jong, Lee, S.H., Goto, H., Kato, T., Fujii, K., Cho, M.W., Yao, T.

    Published in IEEE photonics technology letters (01-02-2008)
    “…Vertical light-emitting diodes (LEDs) were successfully fabricated by a chemical lift-off process using a selectively etchable CrN buffer layer. The novel CrN…”
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    Journal Article
  13. 13

    Lattice strain in bulk GaN epilayers grown on CrN/sapphire template by Lee, S. W., Ha, Jun-Seok, Lee, Hyun-Jae, Lee, Hyo-Jong, Goto, H., Hanada, T., Goto, T., Fujii, Katsushi, Cho, M. W., Yao, T.

    Published in Applied physics letters (23-02-2009)
    “…Microphotoluminescence spectroscopy is used to investigate local strain in GaN films grown on c -sapphire with CrN buffer, where the CrN buffer is partly…”
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    Journal Article
  14. 14

    Photoelectrochemical Properties of p-Type GaN in Comparison with n-Type GaN by Fujii, Katsushi, Ohkawa, Kazuhiro

    Published in Japanese Journal of Applied Physics (01-01-2005)
    “…We studied the photoelectrochemical properties of p-type GaN compared with those of n-type GaN. Band-edge potentials of p-type GaN were determined from the…”
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  15. 15

    Comparison of Semiconductor--Electrolyte and Semiconductor--Metal Schottky Junctions Using AlGaN/GaN Photoelectrochemical Electrode by Nakamura, Akihiro, Sugiyama, Masakazu, Fujii, Katsushi, Nakano, Yoshiaki

    Published in Japanese Journal of Applied Physics (01-08-2013)
    “…A semiconductor photoelectrochemical electrode that contains a heterostructure at the surface vicinity is attractive as a corrosion-tolerant electrode. In…”
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    Journal Article
  16. 16

    Growth of strain-compensated InGaN/AlN multiple quantum wells on GaN by MOVPE by Anazawa, Kazehiko, Hassanet, Sodabanlu, Fujii, Katsushi, Nakano, Yoshiaki, Sugiyama, Masakazu

    Published in Journal of crystal growth (01-05-2013)
    “…Strain-compensated InGaN/AlN MQWs were grown on a c-plane GaN/sapphire template by MOVPE at 780°C. After optimization of its growth conditions, several samples…”
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    Journal Article Conference Proceeding
  17. 17

    Homoepitaxy of ZnO and MgZnO Films at 90°C by Ehrentraut, Dirk, Goh, Gregory K.L., Fujii, Katsushi, Ooi, Chin Chun, Quang, Le Hong, Fukuda, Tsuguo, Kano, Masataka, Zhang, Yuantao, Matsuoka, Takashi

    Published in Journal of solid state chemistry (01-06-2014)
    “…The aqueous synthesis of uniform single crystalline homoepitaxial zinc oxide, ZnO, and magnesium zinc oxide, MgxZn1−xO, films under very low temperature…”
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    Journal Article Conference Proceeding
  18. 18

    Leakage current improvement of nitride-based light emitting diodes using CrN buffer layer and its vertical type application by chemical lift-off process by Fujii, Katsushi, Lee, Seogwoo, Ha, Jun-Seok, Lee, Hyun-Jae, Lee, Hyo-Jong, Lee, Sang-Hyun, Kato, Takashi, Cho, Meoung-Whan, Yao, Takafumi

    Published in Applied physics letters (15-06-2009)
    “…We report the electrical characteristics of vertical and lateral type light emitting diodes (LEDs) grown with CrN buffer layer. The LED with CrN buffer showed…”
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    Journal Article
  19. 19

    Recombination activity of dislocations on (0001) introduced in wurtzite ZnO at elevated temperatures by Ohno, Yutaka, Tokumoto, Yuki, Yonenaga, Ichiro, Fujii, Katsushi, Yao, Takafumi, Yamamoto, Naoki

    Published in Physica. B, Condensed matter (01-08-2012)
    “…The activity for non-radiative recombination at dislocations on (0001) basal planes was examined in wurtzite ZnO bulk single crystals. In panchromatic…”
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    Journal Article Conference Proceeding
  20. 20

    Threading dislocation reduction in a GaN film with a buffer layer grown at an intermediate temperature by Cho, Youngji, Chang, Jiho, Ha, Joonseok, Lee, Hyun-jae, Fujii, Katsushi, Yao, Takafumi, Lee, Woong, Sekiguchi, Takashi, Yang, Jun-Mo, Yoo, Jungho

    “…Remarkable reduction of the threading dislocation (TD) density has been achieved by inserting a GaN layer grown at an intermediate temperature (900 °C) (IT-GaN…”
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