Search Results - "Katsushi, Fujii"
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Distributed control of a user-on-demand renewable-energy power-source system using battery and hydrogen hybrid energy-storage devices
Published in International journal of hydrogen energy (18-10-2019)“…A user-on-demand power source based on renewable energy requires storage devices to balance power sources and power demands because of the fluctuation of power…”
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Electrochemical CO2 Reduction Using Gas Diffusion Electrode Loading Ni-doped Covalent Triazine Frameworks in Acidic Electrolytes
Published in Denki kagaku oyobi kōgyō butsuri kagaku (05-09-2020)“…Ni-doped covalent triazine frameworks (Ni-CTF) has been known as an efficient electrocatalysts that achieve conversion of carbon dioxide (CO2) to carbon…”
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Effects of Ag Nanoparticle Coated Metal Electrodes on Electrochemical CO2 Reduction in Aqueous KHCO3
Published in Denki kagaku oyobi kōgyō butsuri kagaku (25-03-2022)“…Electrochemical CO2 reduction is crucial for developing a sustainable closed-carbon-cycle society; however, the factors determining product selectivity have…”
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Low-temperature growth of AlN and GaN by metal organic vapor phase epitaxy for polarization engineered water splitting photocathode
Published in Journal of crystal growth (15-04-2017)“…Crystal properties of low-temperature grown AlN (LT-AlN) combined with low temperature GaN (LT-GaN) grown by metal organic vapor phase epitaxy (MOVPE) were…”
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5
Analysis of the Gas Phase Kinetics Active during GaN Deposition from NH3 and Ga(CH3)3
Published in The journal of physical chemistry. A, Molecules, spectroscopy, kinetics, environment, & general theory (16-07-2015)“…The results of a systematic investigation aimed at determining the dominant gas phase chemistry active during GaN MOVPE are reported and discussed in this…”
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Structural changes in the S3 state of the oxygen evolving complex in photosystem II
Published in Chemical physics letters (01-05-2016)“…[Display omitted] •The S3 state of the Mn4CaO5-cluster in photosystem II was investigated by DFT.•The S3 state structure consisting of only 2.7–2.8Å MnMn…”
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Highly Efficient Electrocatalytic Hydrogen Production over Carbon Nanotubes Loaded with Platinum Nanoparticles Using Solution Processing
Published in Advanced materials interfaces (01-05-2023)“…Proton exchange membrane (PEM) electrolyzers are used for hydrogen (H2) production by water electrolysis. The commercial cathodic electrocatalyst for this…”
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Position Dependent Dielectric Function Near the Cu Surface
Published in Journal of the Physical Society of Japan (15-11-2022)Get full text
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Electroactive species study in the electrochemical reduction of CO2 in KHCO3 solution at elevated temperature
Published in Journal of energy chemistry (01-05-2016)“…Photoelectrochemical and electrochemical reduction of CO2 into organic chemicals is promising for directly or indirectly transforming solar energy into…”
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10
Photoelectrochemical Properties of the p−n Junction in and near the Surface Depletion Region of n-Type GaN
Published in Journal of physical chemistry. C (30-12-2010)“…Photoelectrochemical water splitting is expecting a new energy source to produce hydrogen from water. The photoilluminated electrode using a uniform…”
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Hydrogen Gas Generation by Splitting Aqueous Water Using n-Type GaN Photoelectrode with Anodic Oxidation
Published in Japanese Journal of Applied Physics (01-01-2005)“…Hydrogen gas generation from a counterelectrode was clearly observed for the first time using light-illuminated n-type GaN as a working photoelectrode in an…”
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12
The Fabrication of Vertical Light-Emitting Diodes Using Chemical Lift-Off Process
Published in IEEE photonics technology letters (01-02-2008)“…Vertical light-emitting diodes (LEDs) were successfully fabricated by a chemical lift-off process using a selectively etchable CrN buffer layer. The novel CrN…”
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13
Lattice strain in bulk GaN epilayers grown on CrN/sapphire template
Published in Applied physics letters (23-02-2009)“…Microphotoluminescence spectroscopy is used to investigate local strain in GaN films grown on c -sapphire with CrN buffer, where the CrN buffer is partly…”
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Photoelectrochemical Properties of p-Type GaN in Comparison with n-Type GaN
Published in Japanese Journal of Applied Physics (01-01-2005)“…We studied the photoelectrochemical properties of p-type GaN compared with those of n-type GaN. Band-edge potentials of p-type GaN were determined from the…”
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Comparison of Semiconductor--Electrolyte and Semiconductor--Metal Schottky Junctions Using AlGaN/GaN Photoelectrochemical Electrode
Published in Japanese Journal of Applied Physics (01-08-2013)“…A semiconductor photoelectrochemical electrode that contains a heterostructure at the surface vicinity is attractive as a corrosion-tolerant electrode. In…”
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Growth of strain-compensated InGaN/AlN multiple quantum wells on GaN by MOVPE
Published in Journal of crystal growth (01-05-2013)“…Strain-compensated InGaN/AlN MQWs were grown on a c-plane GaN/sapphire template by MOVPE at 780°C. After optimization of its growth conditions, several samples…”
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Journal Article Conference Proceeding -
17
Homoepitaxy of ZnO and MgZnO Films at 90°C
Published in Journal of solid state chemistry (01-06-2014)“…The aqueous synthesis of uniform single crystalline homoepitaxial zinc oxide, ZnO, and magnesium zinc oxide, MgxZn1−xO, films under very low temperature…”
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Journal Article Conference Proceeding -
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Leakage current improvement of nitride-based light emitting diodes using CrN buffer layer and its vertical type application by chemical lift-off process
Published in Applied physics letters (15-06-2009)“…We report the electrical characteristics of vertical and lateral type light emitting diodes (LEDs) grown with CrN buffer layer. The LED with CrN buffer showed…”
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Recombination activity of dislocations on (0001) introduced in wurtzite ZnO at elevated temperatures
Published in Physica. B, Condensed matter (01-08-2012)“…The activity for non-radiative recombination at dislocations on (0001) basal planes was examined in wurtzite ZnO bulk single crystals. In panchromatic…”
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Journal Article Conference Proceeding -
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Threading dislocation reduction in a GaN film with a buffer layer grown at an intermediate temperature
Published in Journal of the Korean Physical Society (2015)“…Remarkable reduction of the threading dislocation (TD) density has been achieved by inserting a GaN layer grown at an intermediate temperature (900 °C) (IT-GaN…”
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