Search Results - "Katsiashvili, M."

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  1. 1
    A study of an Al-Ge3N4-Ge structure by the method of photo-capacitance-voltage characteristics

    A study of an Al-Ge3N4-Ge structure by the method of photo-capacitance-voltage characteristics by Dzhanelidze, R. B., Dzhanelidze, M. B., Katsiashvili, M. R.

    Published in Semiconductors (Woodbury, N.Y.) (01-01-2000)
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  2. 2
    Development of the amorphous, high resistivity Ge:(O,N) films for radiation-hardened MIS device applications

    Development of the amorphous, high resistivity Ge:(O,N) films for radiation-hardened MIS device applications by Jishiashvili, D., Shiolashvili, Z., Janelidze, R., Gobronidze, V., Kutelia, E., Mosidze, L., Nakhutsrishvili, I., Katsiashvili, M.

    “…Application of amorphous, high resistivity O- and N-doped Ge films is proposed to solve some radiation hardness problems. The new type of insulating a-Ge:(O,N)…”
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  3. 3
    Peculiarities of the phase behavior of liquid-crystal mixtures at the Cholesteric → Smectic (Ch → Sm) transition boundary

    Peculiarities of the phase behavior of liquid-crystal mixtures at the Cholesteric → Smectic (Ch → Sm) transition boundary by Japaridze, K. G., Élashvili, Z. M., Devadze, L. V., Sepashvili, N. O., Katsiashvili, M. R.

    Published in Crystallography reports (01-05-2006)
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