Search Results - "Katnani, A. D."

Kinetics and initial stages of oxidation of aluminum nitride: Thermogravimetric analysis and x‐ray photoelectron spectroscopy study by Katnani, A. D., Papathomas, K. I.

“…The resistance of AlN powder to oxidation upon heat treatment in air is investigated using thermogravimetric analysis (TGA) and x‐ray photoelectron…”
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Microscopic study of semiconductor heterojunctions: photoemission measurement of the valance-band discontinuity and of the potential barriers by KATNANI, A. D, MARGARITONDO, G

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Reduction of silicon-aluminum interdiffusion by improved semiconductor surface ordering by BRILLSON, L. J, SLADE, M. L, KATNANI, A. D, KELLY, M, MARGARITONDO, G

“…Aluminum overlayers on highly ordered single-crystal silicon (100) and (111) surfaces in ultrahigh vacuum exhibit characteristic interface widths less than…”
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Initial Adsorption State for Al on GaAs(110) and Its Role in the Schottky Barrier Formation by Daniels, R. R., Katnani, A. D., Zhao, Te-Xiu, Margaritondo, G., Zunger, Alex

“…Synchrotron-radiation experiments were performed at ultralow ( < 0.1 monolayer) coverages to test the weakly-interacting-cluster model for Al adsorption on…”
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Photoemission studies of atomic redistribution at gold–silicon and aluminum–silicon interfaces by Brillson, L. J., Katnani, A. D., Kelly, M., Margaritondo, G.

“…We have used soft x‐ray photoemission spectroscopy (SXPS) to monitor the rearrangement of Si and metal atoms during the initial stages of Au or Al interface…”
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Independence of Fermi-Level position and valence-band edge discontinuity at GaAs-Ge(100) interfaces by CHIARADIA, P, KATNANI, A. D, SANG, H. W. JR, BAUER, R. S

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Effects of oxidation on the electrical resistance of cermet thin films by KATNANI, A. D, MATIENZO, L. J, EMMI, F

“…The increase in film resistance is due to changes in the depth of surface oxidation and the bulk resistivity associated with the degree of crystallinity; a…”
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Commutativity and transitivity of GaAs-AlAs-Ge(100) band offsets by KATNANI, A. D, BAUER, R. S

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Modification of the germanium oxidation process by aluminum adatoms by Katnani, A. D., Perfetti, P., Zhao, Te-Xiu, Margaritondo, G.

“…Ultrathin (nominal thickness 0.4–2 Å) aluminum overlayers dramatically increase the oxidation rate of Ge(111) surfaces. The resulting chemisorption phase does…”
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Photoemission and theoretical studies of GaAs(111) and (111) surfaces: vacancy models by KATNANI, A. D, CHADI, D. J

“…Experimental and theoretical results for the Ga- and arsenic-terminated GaAs(111) 2 x 2 reconstructed surfaces are presented. For the Ga-terminated (111)…”
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Irrelevance of interface defects to heterojunction band offsets by KATNANI, A. D, CHIARADIA, P, SANG, H. W. JR, BAUER, R. S

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Atomic-interlayer-controlled diffusion at semiconductor-semiconductor interfaces by Margaritondo, G., Stoffel, N. G., Katnani, A. D., Brillson, L. J.

“…We present experimental evidence that the extent of microscopic interdiffusion processes at GaAs-Ge interfaces is strongly affected by ultrathin layers of a…”
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Interdiffusion and chemical trapping at InP(110) interfaces with Au, Al, Ni, Cu, and Ti by SHAPIRA, Y, BRILLSON, L. J, KATNANI, A. D, MARGARITONDO, G

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Core‐level photoemission study of MBE‐grown GaAs(111) and (100) surfaces by Katnani, A. D., Sang, H. W., Chiaradia, P., Bauer, R. S.

“…MBE‐grown GaAs(111) and (100) surfaces have been investigated using synchrotron radiation photoemission spectroscopy. A least‐squares fit routine has been used…”
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Samarium chemisorption on group-IV semiconductors by FRANCIOSI, A, PERFETTI, P, KATNANI, A. D, WEAVER, J. H

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Fermi level position and valence band discontinuity at GaAs/Ge interfaces by Katnani, A. D., Chiaradia, P., Sang, H. W., Bauer, R. S.

“…We present a photoemission study of the valence band discontinuity ΔE v and the Fermi level E F at the abrupt n‐GaAs/Ge interface. We investigated these…”
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Microscopic effects at GaAs/Ge(100) molecular-beam-epitaxy interfaces: synchrotron-radiation photoemission study by KATNANI, A. D, CHIARADIA, P, SANG, H. W. JR, BAUER, R. S

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Low‐voltage scanning electron microscopy: A surface sensitive technique by Katnani, A. D., Hurban, S., Rands, B.

“…The advancements in electron optics have made it possible to cover a wide electron energy range without significant degradation in the imaging quality of a…”
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Effect of an Al interlayer on the GaAs/Ge(100) heterojunction formation by KATNANI, A. D, CHIARADIA, P, CHO, Y, MAHOWALD, P, PIANETTA, P, BAUER, R. S

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Abruptness of Semiconductor-Metal Interfaces by Brillson, L. J., Brucker, C. F., Stoffel, N. G., Katnani, A. D., Margaritondo, G.

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