Search Results - "Katkov, A. V."

In-rich molecular beam epitaxy of InAs on Sb-terminated GaAs(001) surface by Katkov, A.V., Wang, C.C., Chi, J.Y.

“…The effect of various Sb-terminated GaAs(001) templates on the growth of InAs was investigated by varying the As flux. The growth of InAs under In-rich growth…”
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Practical Malware Analysis by Elizarov, D. A., Katkov, A. V.

“…Objective . Currently, the main method of attack on organizations is malware. The problem of strengthening protection against this type of attack remains…”
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Analysis of Carrier Scattering Mechanisms in AlN/GaN HEMT Heterostructures with an Ultrathin AlN Barrier by Gusev, A. S., Sultanov, A. O., Katkov, A. V., Ryndya, S. M., Siglovaya, N. V., Klochkov, A. N., Ryzhuk, R. V., Kargin, N. I., Borisenko, D. P.

“…Using the method of molecular beam epitaxy with the plasma activation of nitrogen, experimental AlN/GaN heterostructures (HSs) with an ultrathin AlN barrier…”
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Surgical treatment of patient with echinococcus cyst of left ventricle apex by Il'inov, V N, Kozlov, B N, Kuznetsov, M S, Panfilov, D S, Nasrashvili, G G, Lelik, E V, Katkov, V A, Samtsova, T M

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Effect of Ga predeposition layer on the growth of GaAs on vicinal Ge(0 0 1) by Gutakovsky, A.K, Katkov, A.V, Katkov, M.I, Pchelyakov, O.P, Revenko, M.A

“…We report a detailed study of molecular beam epitaxial growth of GaAs films on vicinal Ge(0 0 1). Reflection high-energy electron diffraction was used to…”
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Influence of the step height of the vicinal surface of germanium on the formation of antiphase boundaries in a gallium-arsenide-germanium-gallium-arsenide(001) system by Gutakovskii, A. K., Katkov, A. V., Katkov, M. I., Pchelyakov, O. P., Revenko, M. A.

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Effect of Ga predeposition layer on the growth of GaAs on vicinal Ge(0 0 1) by GUTAKOVSKY, A. K, KATKOV, A. V, KATKOV, M. I, PCHELYAKOV, O. P, REVENKO, M. A

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