Search Results - "Katata, T."
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1
Highly reliable CVD-WSi metal gate electrode for nMOSFETs
Published in IEEE transactions on electron devices (01-10-2005)“…In this paper, we first propose an improved chemical vapor deposition (CVD) WSi/sub x/ metal gate suitable for use in nMOSFETs. We studied the relationship…”
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2
Nectin: An Adhesion Molecule Involved in Formation of Synapses
Published in The Journal of cell biology (04-02-2002)“…The nectin-afadin system is a novel cell-cell adhesion system that organizes adherens junctions cooperatively with the cadherin-catenin system in epithelial…”
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3
Involvement of nectin in the localization of junctional adhesion molecule at tight junctions
Published in Oncogene (31-10-2002)“…Junctional adhesion molecule (JAM) is a Ca2+-independent immunoglobulin-like cell-cell adhesion molecule which localizes at tight junctions (TJs). Claudin is a…”
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4
Highly reliable PVD/ALD/PVD stacked barrier metal structure for 45nm-node copper dual-damascene interconnects
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5
Role of nectin in organization of tight junctions in epithelial cells
Published in Genes to cells : devoted to molecular & cellular mechanisms (01-10-2002)“…Background In polarized epithelial cells, cell‐cell adhesion forms specialized membrane structures comprised of claudin‐based tight junctions (TJs) and of…”
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Involvement of nectin in the localization of IQGAP1 at the cell-cell adhesion sites through the actin cytoskeleton in Madin-Darby canine kidney cells
Published in Oncogene (10-04-2003)“…IQGAP1, a putative downstream target of the Rho family small G proteins, Cdc42 and Rac, localizes at adherens junctions (AJs) in epithelial cells. It has been…”
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7
Solid phase replacement process for multilevel high-aspect ratio Al fill applications
Published in Proceedings of the IEEE 1998 International Interconnect Technology Conference (Cat. No.98EX102) (1998)“…We present a high aspect ratio Al fill process using solid phase replacement (SPR). In contrast to earlier work in which polysilicon (poly-Si) was used,…”
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Conference Proceeding -
8
High performance Al dual damascene process with elevated double stoppers
Published in Proceedings of the IEEE 1998 International Interconnect Technology Conference (Cat. No.98EX102) (1998)“…An integrated Al dual damascene process which can simultaneously realize smaller interconnect wire resistance variations and reduced wire-to-wire capacitance…”
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9
Copper filling contact process to realize low resistance and low cost production fully compatible to SOC devices
Published in International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) (2001)“…A copper filling contact process that does not cause any device characteristic degradation or reliability degradation is demonstrated. Optimization of the…”
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10
Development of stable PZT sputtering process using ex-situ crystallization and PZT/Pt interface control technique
Published in ISAF 1998. Proceedings of the Eleventh IEEE International Symposium on Applications of Ferroelectrics (Cat. No.98CH36245) (1998)“…Precise control of Pb content in sputter-deposited amorphous PZT films was achieved by optimization of substrate temperature; substrate and shield potential,…”
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11
Follicular dendritic cell tumor with histiocytic characteristics and fibroblastic antigen
Published in Pathology international (01-10-1997)“…A report is presented of a follicular dendritlc cell (FDC) tumor arising In the lymph nodes and Inguen of a 55‐year‐old Japanese female, who had suffered from…”
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12
Secondary Aortoduodenal Fistula Complicating Aortic Grafting, as a Cause of Intermittent Chronic Intestinal Bleeding
Published in Internal Medicine (1998)“…Intermittent intestinal bleeding persisted in a 77-year-old male, who had undergone grafting for abdominal aortic aneurysm. Each attack lasted for a few weeks…”
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13
A Fully Integrated Aluminum Dual Damascene Process Using a New Double Stopper Structure
Published in Japanese Journal of Applied Physics (01-10-1998)“…A fully integrated aluminum dual damascene process is presented. The process incorporates a double silicon nitride etch stopper structure to achieve better…”
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14
Cu dual damascene process for 0.13 um technology generation using self ion sputtering (SIS) with ion reflector
Published in Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407) (2000)“…Newly developed self ion sputtering(SIS) system is applied to Cu seed formation for electroplating (EP)-Cu filling. SIS is a bias sputtering using Cu/sup +/…”
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15
Highly reliable PVD/ALD/PVD stacked barrier metal structure for 45-nm node copper dual-damascene interconnects
Published in Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729) (2004)“…In this paper, we describe highly reliable barrier metal structure for 45nm-node (140nm pitch) high performance copper interconnects. Issues and solutions for…”
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16
Low resistance dual damascene process by new Al reflow using Nb liner
Published in 1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216) (1998)“…This paper describes excellent Al filling characteristics and low resistance dual damascene interconnects obtained with a new Al reflow process using Nb liner…”
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17
Highly reliable Cu/low-k dual-damascene interconnect technology with hybrid (PAE/SiOC) dielectrics for 65 nm-node high performance eDRAM
Published in Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695) (2003)“…100 nm half-pitch Cu dual-damascene (DD) interconnects with low-k hybrid (PAE(k2.65)/SiOC(k2.5)/SiC(k3.5)) dielectrics have been successfully integrated for a…”
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Conference Proceeding -
18
BEOL process integration technology for 45 nm node porous low-k/copper interconnects
Published in Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005 (2005)“…Highly reliable BEOL integration technology with porous low-k (k=2.3) was realized by development focusing on plasma damage control and moisture control. A…”
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Conference Proceeding -
19
Aerosol Deposition and Behavior on Leaves in Cool-temperate Deciduous Forests. Part 1: A Preliminary Study of the Effect of Fog Deposition on Behavior of Particles Deposited on the Leaf Surfaces by Microscopic Observation and Leaf-washing Technique
Published in Asian journal of atmospheric environment (Online) (2013)“…To establish the method for investigating the behavior of aerosol particles deposited on the leaf surface against fog water under natural conditions, scanning…”
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Aerosol Deposition and Behavior on Leaves in Cool-temperate Deciduous Forests. Part 2: Characteristics of Fog Water Chemistry and Fog Deposition in Northern Japan
Published in Asian journal of atmospheric environment (Online) (2013)“…The fog water chemistry and deposition in northern Japan were investigated by fog water and throughfall measurements in 2010. Fog water was sampled weekly by…”
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