Search Results - "Kataoka, Yuji"

Development of highly reliable ferroelectric random access memory and its Internet of Things applications by Eshita, Takashi, Wang, Wensheng, Nomura, Kenji, Nakamura, Ko, Saito, Hitoshi, Yamaguchi, Hideshi, Mihara, Satoru, Hikosaka, Yukinobu, Kataoka, Yuji, Kojima, Manabu

“…Ferroelectric random access memory (FRAM) has been commercialized for about 20 years and its reliability has been well proven all over the world. In the recent…”
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Interface energetics and atomic structure of epitaxial La1−xSrxCoO3 on Nb:SrTiO3 by Van Overmeere, Quentin, Baniecki, John D., Yamazaki, Takashi, Ricinschi, Dan, Aso, Hiroyuki, Miyata, Yusuke, Yamada, Hiroaki, Fujimura, Norifumi, Kataoka, Yuji, Imanaka, Yoshihiko

“…The energetics at oxide semiconductor/La1−xSrxCoO3 heterojunctions, including the respective alignment of the valence and conduction bands, govern charge…”
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Analytical Model for Redistribution Profile of Ion-Implanted Impurities During Solid-Phase Epitaxy by Suzuki, Kunihiro, Kataoka, Yuji, Nagayama, Susumu, Magee, Charles W., Buyuklimanli, Temel H., Nagayama, Tsutomu

“…We evaluated the redistribution profiles of ion-implanted impurities during solid-phase epitaxy using Rutherford backscattering spectrometry (RBS). RBS data…”
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Possibility of Fabricating Anisotropic Conductive Film with a Line-and-Space-Like Pattern by Stick-Slip Accompanying Abrasion by Naito, Keishi, Kataoka, Yuji, Yashiro, Kisaragi

“…The development of an anisotropic conductive film was attempted using original microfabrication (stick-slip (SS) processing) involving SS accompanying…”
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Analysis of EEL spectrum of low-loss region using the Cs-corrected STEM–EELS method and multivariate analysis by Yamazaki, Takashi, Kotaka, Yasutoshi, Kataoka, Yuji

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Detailed analysis of the silicon surface under low-energy oxygen bombardment at atomic resolution by Yamazaki, Takashi, Kotaka, Yasutoshi, Itani, Tsukasa, Yamazaki, Kazutoshi, Kataoka, Yuji

“…A detailed analysis of the amorphous-SiO sub(2)/crystalline-Si(011) interface formed by low-energy oxygen bombardment is performed by high-resolution…”
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Study of atomic resolved plasmon-loss image by spherical aberration-corrected STEM-EELS method by Yamazaki, Takashi, Kotaka, Yasutoshi, Tsukada, Mineharu, Kataoka, Yuji

“…To gain an understanding of a plasmon-loss image obtained with an atomic resolution scanning transmission electron microscope (STEM)-electron energy loss…”
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High Tilt Angle Ion Implantation into Polycrystalline Si Gates by Suzuki, Kunihiro, Kataoka, Yuji, Aoyama, Takayuki

“…We previously reported about the profiles of ion-implanted B in 400-nm-thick polycrystalline Si (poly-Si) and evaluated the profiles, showing that the…”
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Transmission electron microscopy study on the crystallization and boron distribution of CoFeB/MgO/CoFeB magnetic tunnel junctions with various capping layers by Miyajima, Toyoo, Ibusuki, Takahiro, Umehara, Shinjiro, Sato, Masashige, Eguchi, Shin, Tsukada, Mineharu, Kataoka, Yuji

“…High-resolution transmission electron microscopy and electron energy-loss spectroscopy (EELS) were used to study the microstructural properties of…”
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High Activation of Ga at Low Temperatures by Suzuki, Kunihiro, Ebiko, Yoshiki, Kataoka, Yuji

“…We found that ion-implanted Ga was activated at a concentration of around 4×10 19 cm -3 , independent of annealing temperature. This active concentration is…”
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Analysis of EEL spectrum of low-loss region using the C s -corrected STEM–EELS method and multivariate analysis by Yamazaki, Takashi, Kotaka, Yasutoshi, Kataoka, Yuji

“…We analyzed a Si/SiO 2 interface using multivariate analysis and spherical aberration-corrected scanning transmission electron microscopy–electron energy loss…”
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Indications and results of vascularized pedicle iliac bone graft in avascular necrosis of the femoral head by Iwata, H, Torii, S, Hasegawa, Y, Itoh, H, Mizuno, M, Genda, E, Kataoka, Y

“…Several reports describe methods of treatment for avascular necrosis of the femoral head (ANFH) involving 0 to 2 mm of collapse. Some cases of ANFH have good…”
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Ferroelectric random access memory with high electric properties and high production yield realized by employing an AlO x underlying layer of Pt bottom electrode for a La-doped lead zirconate titanate capacitor by Wang, Wensheng, Nomura, Kenji, Nakamura, Ko, Eshita, Takashi, Ozawa, Soichiro, Yamaguchi, Hideshi, Takai, Kazuaki, Watanabe, Junichi, Mihara, Satoru, Hikosaka, Yukinobu, Saito, Hitoshi, Kataoka, Yuji, Kojima, Manabu

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Ferroelectric random access memory with high electric properties and high production yield realized by employing an AlOx underlying layer of Pt bottom electrode for a La-doped lead zirconate titanate capacitor by Wang, Wensheng, Nomura, Kenji, Nakamura, Ko, Eshita, Takashi, Ozawa, Soichiro, Yamaguchi, Hideshi, Takai, Kazuaki, Watanabe, Junichi, Mihara, Satoru, Hikosaka, Yukinobu, Saito, Hitoshi, Kataoka, Yuji, Kojima, Manabu

“…Although ferroelectric random access memory (FRAM) has superior electric properties, its downside is that it has a relatively larger cell area in comparison…”
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Control of La-doped Pb(Zr,Ti)O3 crystalline orientation and its influence on the properties of ferroelectric random access memory by Wang, Wensheng, Nomura, Kenji, Yamaguchi, Hideshi, Nakamura, Ko, Eshita, Takashi, Ozawa, Soichiro, Takai, Kazuaki, Mihara, Satoru, Hikosaka, Yukinobu, Hamada, Makoto, Kataoka, Yuji

“…We investigated the crystallization mechanisms of sputter-deposited La-doped Pb(Zr,Ti)O3 (PLZT) on a Pt/Ti metal stack in the postdeposition annealing (PDA) at…”
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Control of La-doped Pb(Zr,Ti)O 3 crystalline orientation and its influence on the properties of ferroelectric random access memory by Wang, Wensheng, Nomura, Kenji, Yamaguchi, Hideshi, Nakamura, Ko, Eshita, Takashi, Ozawa, Soichiro, Takai, Kazuaki, Mihara, Satoru, Hikosaka, Yukinobu, Hamada, Makoto, Kataoka, Yuji

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Ferroelectric random access memory with high electric properties and high production yield realized by employing an AlO^sub x^ underlying layer of Pt bottom electrode for a La-doped lead zirconate titanate capacitor by Wang, Wensheng, Nomura, Kenji, Nakamura, Ko, Eshita, Takashi, Ozawa, Soichiro, Yamaguchi, Hideshi, Takai, Kazuaki, Watanabe, Junichi, Mihara, Satoru, Hikosaka, Yukinobu, Saito, Hitoshi, Kataoka, Yuji, Kojima, Manabu

“…Although ferroelectric random access memory (FRAM) has superior electric properties, its downside is that it has a relatively larger cell area in comparison…”
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Improvement of ferroelectric random access memory manufacturing margin by employing Pt/AlO x bottom electrode for the La-doped Pb(Zr,Ti)O 3 ferroelectric capacitor by Nomura, Kenji, Wang, Wensheng, Yamaguchi, Hideshi, Nakamura, Ko, Eshita, Takashi, Ozawa, Soichiro, Takai, Kazuaki, Mihara, Satoru, Hikosaka, Yukinobu, Hamada, Makoto, Kojima, Manabu, Kataoka, Yuji

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Improvement of ferroelectric random access memory manufacturing margin by employing Pt/AlO ^sub x^ bottom electrode for the La-doped Pb(Zr,Ti)O^sub 3^ ferroelectric capacitor by Nomura, Kenji, Wang, Wensheng, Yamaguchi, Hideshi, Nakamura, Ko, Eshita, Takashi, Ozawa, Soichiro, Takai, Kazuaki, Mihara, Satoru, Hikosaka, Yukinobu, Hamada, Makoto, Kojima, Manabu, Kataoka, Yuji

“…In our previous works on La-doped Pb(Zr,Ti)O3 (PLZT) growth on a Pt/Ti bottom electrode, the O2 content in postdeposition annealing (PDA) was found to play an…”
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Improvement of ferroelectric random access memory manufacturing margin by employing Pt/AlOx bottom electrode for the La-doped Pb(Zr,Ti)O3 ferroelectric capacitor by Nomura, Kenji, Wang, Wensheng, Yamaguchi, Hideshi, Nakamura, Ko, Eshita, Takashi, Ozawa, Soichiro, Takai, Kazuaki, Mihara, Satoru, Hikosaka, Yukinobu, Hamada, Makoto, Kojima, Manabu, Kataoka, Yuji

“…In our previous works on La-doped Pb(Zr,Ti)O3 (PLZT) growth on a Pt/Ti bottom electrode, the O2 content in postdeposition annealing (PDA) was found to play an…”
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