Search Results - "Karve, G."

Study of TiN and TaN Underlayer Properties and Their Influence on W Growth by Pancharatnam, S., Rodriguez, G., Wang, W., Karve, G., Wynne, J., Mendoza, B., DeVries, S., Pujari, R. N., Breton, M., Carr, A., White, L.

“…The changes in tungsten (W) film growth and resistance are studied using different titanium nitride (TiN) and tantalum nitride (TaN) underlayer films. The…”
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Yield Learning Methodologies and Failure Isolation in Ring Oscillator Circuit for CMOS Technology Research by Chan, Victor, Cheng, K., Greene, A., Levin, T. M., Teehan, S., Karve, G., Guo, D., Bergendahl, M., Lea, D., Strane, J. S., Austin, B., Boye, C., Mattam, S., Choi, S., Gaul, A.

“…We detail the use of ring oscillators (ROs) for yield learning during the research phase of a CMOS technology generation. Failing circuits are located and…”
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Geiger mode operation of ultraviolet 4H-SiC avalanche photodiodes by Beck, A.L., Karve, G., Wang, S., Ming, J., Guo, X., Campbell, J.C.

“…We report single photon counting in p-n junction 4H-SiC avalanche photodetectors. At 325 nm, the unity-gain external quantum efficiency was 10% and the single…”
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FINFET technology featuring high mobility SiGe channel for 10nm and beyond by Guo, D., Karve, G., Tsutsui, G., Lim, K.-Y, Robison, R., Hook, T., Vega, R., Liu, D., Bedell, S., Mochizuki, S., Lie, F., Akarvardar, K., Wang, M., Bao, R., Burns, S., Chan, V., Cheng, K., Demarest, J., Fronheiser, J., Hashemi, P., Kelly, J., Li, J., Loubet, N., Montanini, P., Sahu, B., Sankarapandian, M., Sieg, S., Sporre, J., Strane, J., Southwick, R., Tripathi, N., Venigalla, R., Wang, J., Watanabe, K., Yeung, C. W., Gupta, D., Doris, B., Felix, N., Jacob, A., Jagannathan, H., Kanakasabapathy, S., Mo, R., Narayanan, V., Sadana, D., Oldiges, P., Stathis, J., Yamashita, T., Paruchuri, V., Colburn, M., Knorr, A., Divakaruni, R., Bu, H., Khare, M.

“…SiGe for channel material has been explored as a major technology element after the introduction of FINFET into CMOS technology [1-4]. Research on long channel…”
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Origin of dark counts in In0.53Ga0.47As∕In0.52Al0.48As avalanche photodiodes operated in Geiger mode by Karve, G., Wang, S., Ma, F., Li, X., Campbell, J. C., Ispasoiu, R. G., Bethune, D. S., Risk, W. P., Kinsey, G. S., Boisvert, J. C., Isshiki, T. D., Sudharsanan, R.

“…A dark count rate in InP-based single photon counting avalanche photodiodes is a limiting factor to their efficacy. The temperature dependence of the dark…”
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Detection efficiencies and generalized breakdown probabilities for nanosecond-gated near infrared single-photon avalanche photodiodes by Ramirez, D.A., Hayat, M.M., Karve, G., Campbell, J.C., Torres, S.N., Saleh, B.E.A., Teich, M.C.

“…A rigorous model is developed for determining single-photon quantum efficiency (SPQE) of single-photon avalanche photodiodes (SPADs) with simple or…”
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Study of germline mutations in high risk cancer patients from a tertiary care center in India by Kulkarni, P.S., Gandhi, S.S., Dastane, A.M., Deshmukh, C.D., Hingmire, S., Karve, G., Prayag, A., Kelkar, D.

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A thin-film polymeric waveguide beam deflector based on thermooptic effect by Chiou-Hung Jang, Lin Sun, Jin-Ha Kim, Xuejun Lu, Karve, G., Chen, R.T., Maki, J.J.

“…A thin-film polymeric waveguide beam deflector was fabricated and demonstrated. The three-layer planar waveguide was composed of UV15 as the top cladding…”
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A study of low-bias photocurrent gradient of avalanche photodiodes by Shuling Wang, Sidhu, R., Karve, G., Feng Ma, Xiaowei Li, Xiao Guang Zheng, Hurst, J.B., Xiaoguang Sun, Ning Li, Holmes, A.L., Campbell, J.C.

“…Presents a study of the photo-response of avalanche photodiodes (APDs) under low reverse bias at unity gain. Some wafers exhibit a linear increase of…”
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Time Dependent Dielectric Breakdown of Cobalt and Ruthenium Interconnects at 36nm Pitch by Huang, H., McLaughin, P. S., Kelly, J. J., Yang, C. -C., Southwick, R. G., Wang, M., Bonilla, G., Karve, G.

“…Time dependent dielectric breakdown (TDDB) properties of cobalt and ruthenium interconnects were investigated in 36 nm pitch dual damascene test vehicles. We…”
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Scaling challenges of FinFET architecture below 40nm contacted gate pitch by Razavieh, A., Zeitzoff, P., Brown, D. E., Karve, G., Nowak, E. J.

“…In addition to electrostatics challenges, FinFETs scaled below CPP of 40nm will require ρC of -8×1010Ω-cm2 if performance gains are to be extended. Attainment…”
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Subnatural linewidth using electromagnetically induced transparency in Doppler-broadened vapor by Iftiquar, S. M, Karve, G. R, Natarajan, Vasant

“…Physical Review A 77, 063807 (2008) We obtain subnatural linewidth (i.e. $<\Gamma$) for probe absorption in room-temperature Rb vapor using electromagnetically…”
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Effective Drive Current in Scaled FinFET and NSFET CMOS Inverters by Razavieh, A., Deng, Y., Zeitzoff, P., Na, M.R., Frougier, J., Karve, G., Brown, D.E., Yamashita, T., Nowak, E.J.

“…This work investigates the impact of CMOS scaling on the DC effective drive current, I_{eff} [1], I_{eff}=1/2\times(I_{high}+I_{low})=1/2\times…”
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Failure Isolation in Ring Oscillator Circuit and Defect Detection in CMOS Technology Research by Chan, Victor, Bergendahl, M., Strane, J., Austin, B., Boye, C., Mattam, S., Choi, S., Gaul, A., Cheng, K., Greene, A., Lea, D., Levin, T., Karve, G., Teehan, S., Guo, D.

“…Ring oscillators (ROs) are used for yield learning during the research phase of a CMOS technology generation. Based on electrical data and binning methods, we…”
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Demonstration of optical gain at 1.06 μm in a neodymium-doped polyimide waveguide by Karve, Gauri, Bihari, Bipin, Chen, Ray T.

“…Neodymium-doped polyimide waveguides were studied for optical amplifier applications. Photoluminescence at 890 nm, 1.06 μm, and 1.33 μm from neodymium ions in…”
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Subnatural linewidth for probe absorption in an electromagnetically-induced-transparency medium due to Doppler averaging by Iftiquar, S. M., Karve, G. R., Natarajan, Vasant

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InGaAs/InAlAs avalanche photodiode with undepleted absorber by Li, Ning, Sidhu, Rubin, Li, Xiaowei, Ma, Feng, Zheng, Xiaoguang, Wang, Shuling, Karve, Gauri, Demiguel, Stephane, Holmes, Archie L., Campbell, Joe C.

“…We report an avalanche photodiode with an undepleted p-type InGaAs absorption region and a thin InAlAs multiplication layer. The motivation for utilizing an…”
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Analysis of breakdown probabilities in avalanche photodiodes using a history-dependent analytical model by Wang, Shuling, Ma, Feng, Li, Xiaowei, Karve, Gauri, Zheng, Xiaoguang, Campbell, Joe C.

“…The breakdown probabilities of avalanche photodiodes (APDs) working in the Geiger mode are analyzed using a history-dependent analytical impact-ionization…”
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Analytic modeling of AC response to FET-level elements for CLY optimization by Karve, G., Logan, R., Greene, B., Winslow, J.

“…Minimizing circuit AC delay variations while maintaining power/performance is key for achieving high yielding products. The present work discusses an analytic…”
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GaAsSb resonant-cavity enhanced avalanche photodiode operating at 1.06μm by SIDHU, R, CHEN, H, DUAN, N, KARVE, G. V, CAMPBELL, J. C, HOLMES, A. L

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