Search Results - "Karrakchou, Soufiane"

Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates by Karrakchou, Soufiane, Sundaram, Suresh, Ayari, Taha, Mballo, Adama, Vuong, Phuong, Srivastava, Ashutosh, Gujrati, Rajat, Ahaitouf, Ali, Patriarche, Gilles, Leichlé, Thierry, Gautier, Simon, Moudakir, Tarik, Voss, Paul L., Salvestrini, Jean Paul, Ougazzaden, Abdallah

“…Selective Area van der Waals Epitaxy (SAVWE) of III-Nitride device has been proposed recently by our group as an enabling solution for h-BN-based device…”
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Towards P-Type Conduction in Hexagonal Boron Nitride: Doping Study and Electrical Measurements Analysis of hBN/AlGaN Heterojunctions by Mballo, Adama, Srivastava, Ashutosh, Sundaram, Suresh, Vuong, Phuong, Karrakchou, Soufiane, Halfaya, Yacine, Gautier, Simon, Voss, Paul L, Ahaitouf, Ali, Salvestrini, Jean Paul, Ougazzaden, Abdallah

“…Reliable p-doped hexagonal boron nitride (h-BN) could enable wide bandgap optoelectronic devices such as deep ultra-violet light emitting diodes (UV LEDs),…”
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Natural Boron and 10B‑Enriched Hexagonal Boron Nitride for High-Sensitivity Self-Biased Metal–Semiconductor–Metal Neutron Detectors by Mballo, Adama, Ahaitouf, Ali, Sundaram, Suresh, Srivastava, Ashutosh, Ottapilakkal, Vishnu, Gujrati, Rajat, Vuong, Phuong, Karrakchou, Soufiane, Kumar, Mritunjay, Li, Xiaohang, Halfaya, Yacine, Gautier, Simon, Voss, Paul L, Salvestrini, Jean Paul, Ougazzaden, Abdallah

“…Metal–semiconductor–metal (MSM) detectors based on Ti/Au and Ni/Au interdigitated structures were fabricated using 2.5 micrometer thick hexagonal boron nitride…”
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Advancing Neutron Detection: Fabrication, Characterization, and Performance Evaluation of Self‐Powered PIN BGaN/GaN Superlattice‐Based Neutron Detectors by Srivastava, Ashutosh, Mballo, Adama, Sundaram, Suresh, Ottapilakkal, Vishnu, Vuong, Phuong, Karrakchou, Soufiane, Kumar, Mritunjay, Li, Xiaohang, Halfaya, Yacine, Gautier, Simon, Voss, Paul L., Salvestrini, Jean Paul, Ougazzaden, Abdallah

“…Solid state semiconductor based neutron detectors have the potential to be energy efficient and compact, making them suitable for applications where low power…”
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Control of the Mechanical Adhesion of III–V Materials Grown on Layered h‑BN by Vuong, Phuong, Sundaram, Suresh, Mballo, Adama, Patriarche, Gilles, Leone, Stefano, Benkhelifa, Fouad, Karrakchou, Soufiane, Moudakir, Tarik, Gautier, Simon, Voss, Paul L, Salvestrini, Jean-Paul, Ougazzaden, Abdallah

“…Hexagonal boron nitride (h-BN) can be used as a p-doped material in wide-bandgap optoelectronic heterostructures or as a release layer to allow lift-off of…”
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MOVPE of GaN-based mixed dimensional heterostructures on wafer-scale layered 2D hexagonal boron nitride—A key enabler of III-nitride flexible optoelectronics by Sundaram, Suresh, Vuong, Phuong, Mballo, Adama, Ayari, Taha, Karrakchou, Soufiane, Patriarche, Gilles, Voss, Paul L., Salvestrini, Jean Paul, Ougazzaden, Abdallah

“…We summarize our recent progress in Metal organic vapor phase epitaxy (MOVPE) van der Waals epitaxy of wafer-scale 2D layered hexagonal boron nitride (h-BN) on…”
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Nanopyramid-based absorber to boost the efficiency of InGaN solar cells by El Huni, Walid, Karrakchou, Soufiane, Halfaya, Yacine, Arif, Muhammad, Jordan, Matthew B., Puybaret, Renaud, Ayari, Taha, Ennakrachi, Houda, Bishop, Chris, Gautier, Simon, Ahaitouf, Ali, Voss, Paul L., Salvestrini, Jean Paul, Ougazzaden, Abdallah

“…•InGaN nano-pyramid absorber is shown to release the usual challenging constraint on p-GaN doping.•SiO2 mask is shown to help trap light into the nanopyramids…”
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Novel Scalable Transfer Approach for Discrete III‐Nitride Devices Using Wafer‐Scale Patterned h‐BN/Sapphire Substrate for Pick‐and‐Place Applications by Ayari, Taha, Sundaram, Suresh, Bishop, Chris, Mballo, Adama, Vuong, Phuong, Halfaya, Yacine, Karrakchou, Soufiane, Gautier, Simon, Voss, Paul L., Salvestrini, Jean Paul, Ougazzaden, Abdallah

“…The mechanical release of III‐nitride devices using h‐BN is a promising approach for heterogeneous integration. Upscaling this technology for industrial level…”
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Monolithic Free-Standing Large-Area Vertical III‑N Light-Emitting Diode Arrays by One-Step h‑BN-Based Thermomechanical Self-Lift-Off and Transfer by Karrakchou, Soufiane, Sundaram, Suresh, Gujrati, Rajat, Vuong, Phuong, Mballo, Adama, Adjmi, Hibat E, Ottapilakkal, Vishnu, El Huni, Walid, Bouzid, Karim, Patriarche, Gilles, Ahaitouf, Ali, Voss, Paul L, Salvestrini, Jean Paul, Ougazzaden, Abdallah

“…We demonstrate the fabrication of vertical InGaN light-emitting diodes (LEDs) on large-area free-standing membranes, using a mechanical lift-off technique…”
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Natural Boron and 10 B-Enriched Hexagonal Boron Nitride for High-Sensitivity Self-Biased Metal-Semiconductor-Metal Neutron Detectors by Mballo, Adama, Ahaitouf, Ali, Sundaram, Suresh, Srivastava, Ashutosh, Ottapilakkal, Vishnu, Gujrati, Rajat, Vuong, Phuong, Karrakchou, Soufiane, Kumar, Mritunjay, Li, Xiaohang, Halfaya, Yacine, Gautier, Simon, Voss, Paul L, Salvestrini, Jean Paul, Ougazzaden, Abdallah

“…Metal-semiconductor-metal (MSM) detectors based on Ti/Au and Ni/Au interdigitated structures were fabricated using 2.5 micrometer thick hexagonal boron nitride…”
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Novel Scalable Transfer Approach for Discrete III‐Nitride Devices Using Wafer‐Scale Patterned h‐BN/Sapphire Substrate for Pick‐and‐Place Applications (Adv. Mater. Technol. 10/2019) by Ayari, Taha, Sundaram, Suresh, Bishop, Chris, Mballo, Adama, Vuong, Phuong, Halfaya, Yacine, Karrakchou, Soufiane, Gautier, Simon, Voss, Paul B, Salvestrini, Jean-Paul, Ougazzaden, Abdallah

“…In article number 1900164 by Abdallah Ougazzaden and co‐workers, III‐Nitride based LEDs have been locally grown on h‐BN and fabricated at a wafer‐scale. This…”
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Heterogeneous Integration: Novel Scalable Transfer Approach for Discrete III‐Nitride Devices Using Wafer‐Scale Patterned h‐BN/Sapphire Substrate for Pick‐and‐Place Applications (Adv. Mater. Technol. 10/2019) by Ayari, Taha, Sundaram, Suresh, Bishop, Chris, Mballo, Adama, Vuong, Phuong, Halfaya, Yacine, Karrakchou, Soufiane, Gautier, Simon, Voss, Paul L., Salvestrini, Jean Paul, Ougazzaden, Abdallah

“…In article number 1900164 by Abdallah Ougazzaden and co‐workers, III‐Nitride based LEDs have been locally grown on h‐BN and fabricated at a wafer‐scale. This…”
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Investigation of Sc2O3 Based All-Solid-State EIS Structure for AlGaN/GaN HEMT pH Sensor by Sama, Nossikpendou Yves, Bouhnane, Hafsa, Gautier, Simon, Ahaitouf, Ali, Matray, Jean Michel, Paul Salvestrini, Jean, Ougazzaden, Abdallah, Hathcock, Andrew, He, Dongyuan, Phuong Vuong, Thi Quynh, Karrakchou, Soufiane, Ayari, Taha, Mballo, Adama, Bishop, Chris, Halfaya, Yacine

“…In this work, an all-solid-state electrolyte-insulator-semiconductor (EIS) device is developed for pH sensing performance evaluation of insulating materials…”
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