Search Results - "Karpov, Ilya V."

Temperature-Dependent Contact Resistance to Nonvolatile Memory Materials by Deshmukh, Sanchit, Yalon, Eilam, Lian, Feifei, Schauble, Kirstin E., Xiong, Feng, Karpov, Ilya V., Pop, Eric

“…Emerging nonvolatile memories store data by reversible resistive switching in phase-change materials or metal oxides. As memory cell dimensions are reduced to…”
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Atomic Layer Deposition of Sb2Te3/GeTe Superlattice Film and Its Melt‐Quenching‐Free Phase‐Transition Mechanism for Phase‐Change Memory by Yoo, Chanyoung, Jeon, Jeong Woo, Yoon, Seungjae, Cheng, Yan, Han, Gyuseung, Choi, Wonho, Park, Byongwoo, Jeon, Gwangsik, Jeon, Sangmin, Kim, Woohyun, Zheng, Yonghui, Lee, Jongho, Ahn, Junku, Cho, Sunglae, Clendenning, Scott B., Karpov, Ilya V., Lee, Yoon Kyung, Choi, Jung‐Hae, Hwang, Cheol Seong

“…Atomic layer deposition (ALD) of Sb2Te3/GeTe superlattice (SL) film on planar and vertical sidewall areas containing TiN metal and SiO2 insulator is…”
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Atomic Layer Deposition of Sb 2 Te 3 /GeTe Superlattice Film and Its Melt-Quenching-Free Phase-Transition Mechanism for Phase-Change Memory by Yoo, Chanyoung, Jeon, Jeong Woo, Yoon, Seungjae, Cheng, Yan, Han, Gyuseung, Choi, Wonho, Park, Byongwoo, Jeon, Gwangsik, Jeon, Sangmin, Kim, Woohyun, Zheng, Yonghui, Lee, Jongho, Ahn, Junku, Cho, Sunglae, Clendenning, Scott B, Karpov, Ilya V, Lee, Yoon Kyung, Choi, Jung-Hae, Hwang, Cheol Seong

“…Atomic layer deposition (ALD) of Sb Te /GeTe superlattice (SL) film on planar and vertical sidewall areas containing TiN metal and SiO insulator is…”
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SET to RESET Programming in Phase Change Memories by Karpov, I.V., Kostylev, S.A.

“…Experimental data on details of SET (crystalline) to RESET (amorphous) transition are presented for Ge 2 Sb 2 Te 5 (GST) nonvolatile memory cell. It is shown…”
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Future high density memories for computing applications: Device behavior and modeling challenges by Spadini, Gianpaolo, Karpov, Ilya V, Kencke, David L

“…Memory elements existing and under research are compared for their suitability in computer memory applications. Cross point arrays of phase change elements…”
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A stackable cross point Phase Change Memory by DerChang Kau, Tang, S., Karpov, I.V., Dodge, R., Klehn, B., Kalb, J.A., Strand, J., Diaz, A., Leung, N., Wu, J., Lee, S., Langtry, T., Kuo-wei Chang, Papagianni, C., Jinwook Lee, Hirst, J., Erra, S., Flores, E., Righos, N., Castro, H., Spadini, G.

“…A novel scalable and stackable nonvolatile memory technology suitable for building fast and dense memory devices is discussed. The memory cell is built by…”
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Thermometry of Filamentary RRAM Devices by Yalon, Eilam, Sharma, Abhishek A., Skowronski, Marek, Bain, James A., Ritter, Dan, Karpov, Ilya V.

“…Since thermal effects play a major role in filamentary RRAM devices, we compare the two localized thermometry methods developed for such devices. One method is…”
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Roadmap on ferroelectric hafnia- and zirconia-based materials and devices by Silva, José P. B., Alcala, Ruben, Avci, Uygar E., Barrett, Nick, Bégon-Lours, Laura, Borg, Mattias, Byun, Seungyong, Chang, Sou-Chi, Cheong, Sang-Wook, Choe, Duk-Hyun, Coignus, Jean, Deshpande, Veeresh, Dimoulas, Athanasios, Dubourdieu, Catherine, Fina, Ignasi, Funakubo, Hiroshi, Grenouillet, Laurent, Gruverman, Alexei, Heo, Jinseong, Hoffmann, Michael, Hsain, H. Alex, Huang, Fei-Ting, Hwang, Cheol Seong, Íñiguez, Jorge, Jones, Jacob L., Karpov, Ilya V., Kersch, Alfred, Kwon, Taegyu, Lancaster, Suzanne, Lederer, Maximilian, Lee, Younghwan, Lomenzo, Patrick D., Martin, Lane W., Martin, Simon, Migita, Shinji, Mikolajick, Thomas, Noheda, Beatriz, Park, Min Hyuk, Rabe, Karin M., Salahuddin, Sayeef, Sánchez, Florencio, Seidel, Konrad, Shimizu, Takao, Shiraishi, Takahisa, Slesazeck, Stefan, Toriumi, Akira, Uchida, Hiroshi, Vilquin, Bertrand, Xu, Xianghan, Ye, Kun Hee, Schroeder, Uwe

“…Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development over the last decade, pushing them to the forefront of ultralow-power…”
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Atomic Layer Deposition of Sb2 Te3 /GeTe Superlattice Film and Its Melt-Quenching-Free Phase-Transition Mechanism for Phase-Change Memory by Yoo, Chanyoung, Jeon, Jeong Woo, Yoon, Seungjae, Cheng, Yan, Han, Gyuseung, Choi, Wonho, Park, Byongwoo, Jeon, Gwangsik, Jeon, Sangmin, Kim, Woohyun, Zheng, Yonghui, Lee, Jongho, Ahn, Junku, Cho, Sunglae, Clendenning, Scott B, Karpov, Ilya V, Lee, Yoon Kyung, Choi, Jung-Hae, Hwang, Cheol Seong

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The Role of Interfaces in Damascene Phase-Change Memory by Kencke, D.L., Karpov, I.V., Johnson, B.G., Sean Jong Lee, DerChang Kau, Hudgens, S.J., Reifenberg, J.P., Savransky, S.D., Jingyan Zhang, Giles, M.D., Spadini, G.

“…Phase change memory (PCM) research has largely focused on bulk properties to evaluate cell efficiency. Now both electrical and thermal interface resistances…”
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Highly-stable (9 and High Endurance of 109 Cycles by Banerjee, Writam, Karpov, Ilya V., Agrawal, Ashish, Kim, Seonghun, Lee, Seungwoo, Lee, Sangmin, Lee, Donghwa, Hwang, Hyunsang

“…We demonstrate driving parameters to control the hybrid-filament (HF) in Ag-based threshold switching (TS) devices. To achieve statistically improved TS…”
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