Zinc oxide - analogue of GaN with new perspective possibilities

Zinc oxide - analogue of GaN with new perspective possibilities

Zinc oxide due to specific electrical, optical and acoustic properties is the important semiconductor material, which has many various applications. There is growing interest in ZnO due to its potential applicability for optoelectronic devices such as light‐emitting diodes, laser diodes and detector...

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Published in:Crystal research and technology (1979) Vol. 39; no. 11; pp. 980 - 992
Main Authors: Karpina, V. A., Lazorenko, V. I., Lashkarev, C. V., Dobrowolski, V. D., Kopylova, L. I., Baturin, V. A., Pustovoytov, S. A., Karpenko, A. Ju, Eremin, S. A., Lytvyn, P. M., Ovsyannikov, V. P., Mazurenko, E. A.
Format: Journal Article
Language:English
Published: Berlin WILEY-VCH Verlag 01-11-2004
WILEY‐VCH Verlag
Subjects:
magnetron sputtering
PEMOCVD
random laser
ZnO
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Summary:Zinc oxide due to specific electrical, optical and acoustic properties is the important semiconductor material, which has many various applications. There is growing interest in ZnO due to its potential applicability for optoelectronic devices such as light‐emitting diodes, laser diodes and detectors for UV wavelength range. ZnO properties are very close to those of widely recognized semiconductor GaN. The band gap of ZnO (3.37 eV) is close to that of GaN (3.39 eV) but ZnO exciton binding energy (60 meV) is twice larger than that of GaN (28 meV). Optically pumped UV lasing have been demonstrated at room temperature using high textured ZnO films. The excitonic gain close to 300 cm–1 was achieved. ZnO thin films are expected to have higher quantum efficiency in UV semiconductor laser than GaN. The physical properties of ZnO are considered. PEMOCVD technology was used to deposit piezoelectric and highly transparent electroconductive ZnO films. Their properties are discussed. The experiments on polycrystalline ZnO films deposited by RF magnetron sputtering at different partial pressure of oxygen are presented. AFM images were studied in tapping mode for deposited films. The investigated films were dielectric ones and had optical transparency within 65‐85% at thickness in the interval 0.2‐0.6 μm. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Bibliography:ArticleID:CRAT200310283
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SourceType-Scholarly Journals-1
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content type line 23
ISSN:0232-1300
1521-4079
DOI:10.1002/crat.200310283