Search Results - "Kargin, N"
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1
The Phenomenon of Artificial Radioactivity in Metal Cathodes under Glow Discharge Conditions
Published in Physics of particles and nuclei (01-02-2022)“…It is shown that artificial radioactivity can be initiated under conditions of a glow-discharge plasma. When analyzing the isotopic and elemental composition…”
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2
Influence of film thickness on the dielectric characteristics of hafnium oxide layers
Published in Thin solid films (30-11-2019)“…The present work focuses on the study of properties of hafnium oxide (HfO2) films, deposited by reactive magnetron sputtering of the Hf target in Ar/O2 gas…”
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3
Development of a Method for Constructing a Nonlinear Model of a Metamorphic 0.15-μm МHEMT InAlAs/InGaAs Transistor
Published in Russian microelectronics (01-12-2022)“…A highly accurate method for modeling InAlAs/InGaAs MHEMT transistors of the UHF frequency range with a gate length of 0.15 μm is considered. This method takes…”
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4
Design of a Nonlinear Model of a Pseudomorphic 0.15 μm рHEMT AlGaAs/InGaAs/GaAs Transistor
Published in Russian microelectronics (01-06-2023)“…This paper studies the design of a nonlinear model of AlGaAs/InGaAs/GaAs рHEMT microwave-frequency range transistors with a gate length of 0.15 µm using…”
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5
Sol–Gel Derived Photonic Crystals BaTiO3/SiO2
Published in Semiconductors (Woodbury, N.Y.) (01-11-2021)“…It is shown for the first time that multilayer periodic BaTiO 3 /SiO 2 structures formed by the sol–gel method are tunable photonic crystals with dependence of…”
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6
Initiation of Artificial Radioactivity of Impurity Elements in a Lead Cathode under Conditions of a Glow Discharge
Published in Russian Journal of Physical Chemistry A (01-07-2023)“…The possibility of initiation of nuclear chemical processes in the Pb cathode during a glow discharge in a low-temperature deuterium-containing nonequilibrium…”
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7
Erratum to: Design of a Nonlinear Model of a Pseudomorphic 0.15 µm рHEMT AlGaAs/InGaAs/GaAs Transistor
Published in Russian microelectronics (2023)“…An Erratum to this paper has been published: https://doi.org/10.1134/S1063739723900043…”
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8
Plasma assisted-MBE of GaN and AlN on graphene buffer layers
Published in Japanese Journal of Applied Physics (01-06-2019)“…The possibility of using chemical vapor deposition (CVD) graphene as a 2D buffer layer for epitaxial growth of III-nitrides by plasma assisted-MBE on amorphous…”
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9
Measurement Sensitivity of the Optically Detected Magnetic Resonance for a Single NV– Center in Diamond
Published in Journal of experimental and theoretical physics (01-12-2023)“…The spectra of the optically detected magnetic resonance for single NV – centers have been experimentally studied in two solid-state samples in the range of…”
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10
The Chemical and Mineral Composition of Particles Precipitated from a Plasma–Dust Layer on the Porthole of the Descend Space Vehicles during The Passage of the Earth’s Atmosphere
Published in Geochemistry international (2021)“…Electron microscopic studies of the surface of the spacecraft descent vehicle (DV) have revealed faceted particles of various shape and size, which are formed…”
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11
Relaxation of Mechanical Stress in Epitaxial Films of Cubic Silicon Carbide on Silicon Substrates with a Buffer Porous Layer
Published in Technical physics (01-07-2021)“…The results of this study quantitatively and qualitatively illustrate the processes of mismatch stress relaxation upon epitaxy of cubic silicon carbide on…”
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12
Use of Hyperfine Structure of Optically Detected Magnetic Resonance Spectrum of a Single NV-Defect in Diamond in Quantum Sensorics of Weak Magnetic Fields
Published in Journal of applied spectroscopy (2024)“…The possibility of using NV-defects in diamond at room temperature on nanometer spatial scales to measure magnetic fields was studied. For these purposes,…”
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13
Analysis of Carrier Scattering Mechanisms in AlN/GaN HEMT Heterostructures with an Ultrathin AlN Barrier
Published in Russian microelectronics (2024)“…Using the method of molecular beam epitaxy with the plasma activation of nitrogen, experimental AlN/GaN heterostructures (HSs) with an ultrathin AlN barrier…”
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14
Vector Magnetometry Using a Single NV–13C Complex in Diamond
Published in Journal of applied spectroscopy (2023)“…A method of vector magnetometry implemented using a single N V – 13 C spin system in diamond is proposed. The method is based on a priori knowledge of the…”
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15
Quantum Memory on 13C–13C Dimers in Diamond with NV Centers: Simulation by Quantum Chemistry Methods
Published in Journal of applied spectroscopy (2023)“…Individual electron–nuclear spin systems in solids are promising platforms for implementation of second-generation quantum technologies. The recognized leader…”
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16
Investigation of Isotopic Composition and Purity of 13C-Enriched CVD-Diamond Layers by Raman Spectroscopy and Photoluminescence
Published in Journal of applied spectroscopy (2023)“…A method for estimating the isotopic composition and concentration of N V -centers in diamond using Raman scattering and photoluminescence spectra is…”
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17
Electron Transport in PHEMT AlGaAs/InGaAs/GaAs Quantum Wells at Different Temperatures: Influence of One-Side δ-Si Doping
Published in Semiconductors (Woodbury, N.Y.) (01-02-2018)“…The influence of the concentration of δ doping with Si on the electron transport properties of Al 0.25 Ga 0.75 As/In 0.2 Ga 0.8 As/GaAs pseudomorphic quantum…”
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18
Numerical Optimization of Grating Coupler Parameters for InP-based Photonic Circuits
Published in 2019 PhotonIcs & Electromagnetics Research Symposium - Spring (PIERS-Spring) (01-06-2019)“…We have performed 2D finite-difference time-domain (FDTD) simulations of fiber to chip coupling. The experimental semiconductor structure of the waveguide…”
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Conference Proceeding -
19
Comparison of the thermal interdiffusion phenomena in InGaAs/GaAs and InGaAs/AlGaAs strained heterostructures
Published in Surfaces and interfaces (01-04-2022)“…The effect of 5 min high-temperature thermal annealing on InGaAs/GaAs strained superlattices and InGaAs/AlGaAs PHEMT structures grown by molecular beam epitaxy…”
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20
Electron-Quantum Transport in Pseudomorphic and Metamorphic In0.2Ga0.8As-Based Quantum Wells
Published in Semiconductors (Woodbury, N.Y.) (01-03-2019)“…Metamorphic high-electron-mobility transistor (HEMT) structures based on deep In 0.2 Ga 0.8 As/In 0.2 Al 0.8 As quantum wells (0.7 eV for Γ electrons) with…”
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