Search Results - "Kargin, N"

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  1. 1

    The Phenomenon of Artificial Radioactivity in Metal Cathodes under Glow Discharge Conditions by Timashev, S. F., Savvatimova, I. B., Poteshin, S. S., Kargin, N. I., Sysoev, A. A., Ryndya, S. M.

    Published in Physics of particles and nuclei (01-02-2022)
    “…It is shown that artificial radioactivity can be initiated under conditions of a glow-discharge plasma. When analyzing the isotopic and elemental composition…”
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    Journal Article
  2. 2

    Influence of film thickness on the dielectric characteristics of hafnium oxide layers by Golosov, D.A., Vilya, N., Zavadski, S.М., Melnikov, S.N., Avramchuk, A.V., Grekhov, М.М., Kargin, N.I., Komissarov, I.V.

    Published in Thin solid films (30-11-2019)
    “…The present work focuses on the study of properties of hafnium oxide (HfO2) films, deposited by reactive magnetron sputtering of the Hf target in Ar/O2 gas…”
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    Journal Article
  3. 3

    Development of a Method for Constructing a Nonlinear Model of a Metamorphic 0.15-μm МHEMT InAlAs/InGaAs Transistor by Lokotko, V. V., Vasil’evskii, I. S., Kargin, N. I.

    Published in Russian microelectronics (01-12-2022)
    “…A highly accurate method for modeling InAlAs/InGaAs MHEMT transistors of the UHF frequency range with a gate length of 0.15 μm is considered. This method takes…”
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    Journal Article
  4. 4

    Design of a Nonlinear Model of a Pseudomorphic 0.15 μm рHEMT AlGaAs/InGaAs/GaAs Transistor by Tsunvaza, D., Ryzhuk, R. V., Vasil’evskii, I. S., Kargin, N. I., Klokov, V. A.

    Published in Russian microelectronics (01-06-2023)
    “…This paper studies the design of a nonlinear model of AlGaAs/InGaAs/GaAs рHEMT microwave-frequency range transistors with a gate length of 0.15 µm using…”
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    Journal Article
  5. 5

    Sol–Gel Derived Photonic Crystals BaTiO3/SiO2 by Gaponenko, N. V., Kholov, P. A., Karnilava, Yu. D., Lashkovskaya, E. I., Labunov, V. A., Martynov, I. L., Osipov, E. V., Chistyakov, A. A., Kargin, N. I., Raichenok, T. F., Tikhomirov, S. A.

    Published in Semiconductors (Woodbury, N.Y.) (01-11-2021)
    “…It is shown for the first time that multilayer periodic BaTiO 3 /SiO 2 structures formed by the sol–gel method are tunable photonic crystals with dependence of…”
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    Journal Article
  6. 6

    Initiation of Artificial Radioactivity of Impurity Elements in a Lead Cathode under Conditions of a Glow Discharge by Timashev, S. F., Savvatimova, I. B., Poteshin, S. S., Ryndya, C. M., Kargin, N. I.

    Published in Russian Journal of Physical Chemistry A (01-07-2023)
    “…The possibility of initiation of nuclear chemical processes in the Pb cathode during a glow discharge in a low-temperature deuterium-containing nonequilibrium…”
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    Journal Article
  7. 7

    Erratum to: Design of a Nonlinear Model of a Pseudomorphic 0.15 µm рHEMT AlGaAs/InGaAs/GaAs Transistor by Tsunvaza, D., Ryzhuk, R. V., Vasil’evskii, I. S., Kargin, N. I., Klokov, V. A.

    Published in Russian microelectronics (2023)
    “…An Erratum to this paper has been published: https://doi.org/10.1134/S1063739723900043…”
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    Journal Article
  8. 8

    Plasma assisted-MBE of GaN and AlN on graphene buffer layers by Borisenko, D. P., Gusev, A. S., Kargin, N. I., Komissarov, I. V., Kovalchuk, N. G., Labunov, V. A.

    Published in Japanese Journal of Applied Physics (01-06-2019)
    “…The possibility of using chemical vapor deposition (CVD) graphene as a 2D buffer layer for epitaxial growth of III-nitrides by plasma assisted-MBE on amorphous…”
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    Journal Article
  9. 9

    Measurement Sensitivity of the Optically Detected Magnetic Resonance for a Single NV– Center in Diamond by Kukin, N. S., Muradova, A. P., Nikitin, A. K., Bukhtiyarov, A. A., Semenov, P. A., Vasiliev, A. N., Kargin, N. I., Smirnova, M. O., Terent’ev, S. A., Tarelkin, S. A., Kornilov, N. V.

    “…The spectra of the optically detected magnetic resonance for single NV – centers have been experimentally studied in two solid-state samples in the range of…”
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    Journal Article
  10. 10

    The Chemical and Mineral Composition of Particles Precipitated from a Plasma–Dust Layer on the Porthole of the Descend Space Vehicles during The Passage of the Earth’s Atmosphere by Tugaenko, V. Y., Ovchinnikov, D. S., Isaenkova, M. G., Kargin, N. I., Krymskaya, O. A., Timofeev, A. A., Babich, Y. A.

    Published in Geochemistry international (2021)
    “…Electron microscopic studies of the surface of the spacecraft descent vehicle (DV) have revealed faceted particles of various shape and size, which are formed…”
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    Journal Article
  11. 11

    Relaxation of Mechanical Stress in Epitaxial Films of Cubic Silicon Carbide on Silicon Substrates with a Buffer Porous Layer by Gusev, A. S., Kargin, N. I., Ryndya, S. M., Safaraliev, G. K., Siglovaya, N. V., Smirnova, M. O., Solomatin, I. O., Sultanov, A. O., Timofeev, A. A.

    Published in Technical physics (01-07-2021)
    “…The results of this study quantitatively and qualitatively illustrate the processes of mismatch stress relaxation upon epitaxy of cubic silicon carbide on…”
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    Journal Article
  12. 12

    Use of Hyperfine Structure of Optically Detected Magnetic Resonance Spectrum of a Single NV-Defect in Diamond in Quantum Sensorics of Weak Magnetic Fields by Kukin, N. S., Muradova, A. R., Nikitin, A. K., Buhtijarov, A. A., Nizovtsev, A. P., Semenov, P. A., Vasiliev, A. N., Kargin, N. I., Smirnova, M. O.

    Published in Journal of applied spectroscopy (2024)
    “…The possibility of using NV-defects in diamond at room temperature on nanometer spatial scales to measure magnetic fields was studied. For these purposes,…”
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    Journal Article
  13. 13

    Analysis of Carrier Scattering Mechanisms in AlN/GaN HEMT Heterostructures with an Ultrathin AlN Barrier by Gusev, A. S., Sultanov, A. O., Katkov, A. V., Ryndya, S. M., Siglovaya, N. V., Klochkov, A. N., Ryzhuk, R. V., Kargin, N. I., Borisenko, D. P.

    Published in Russian microelectronics (2024)
    “…Using the method of molecular beam epitaxy with the plasma activation of nitrogen, experimental AlN/GaN heterostructures (HSs) with an ultrathin AlN barrier…”
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    Journal Article
  14. 14

    Vector Magnetometry Using a Single NV–13C Complex in Diamond by Nizovtsev, A. P., Kukin, N. S., Muradova, A. R., Semenov, P. A., Salkazanov, A. T., Smirnova, M. O., Pushkarchuk, A. L., Vasilev, A. N., Kargin, N. I., Kilin, S. Ya

    Published in Journal of applied spectroscopy (2023)
    “…A method of vector magnetometry implemented using a single N V – 13 C spin system in diamond is proposed. The method is based on a priori knowledge of the…”
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    Journal Article
  15. 15

    Quantum Memory on 13C–13C Dimers in Diamond with NV Centers: Simulation by Quantum Chemistry Methods by Nizovtsev, A. P., Pushkarchuk, A. L., Kuten, S. A., Lyakhov, D., Michels, D. L., Gusev, A. S., Kargin, N. I., Kilin, S. Ya

    Published in Journal of applied spectroscopy (2023)
    “…Individual electron–nuclear spin systems in solids are promising platforms for implementation of second-generation quantum technologies. The recognized leader…”
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    Journal Article
  16. 16

    Investigation of Isotopic Composition and Purity of 13C-Enriched CVD-Diamond Layers by Raman Spectroscopy and Photoluminescence by Salkazanov, A. T., Smirnova, M. O., Tarelkin, S. A., Gusev, A. S., Drozdova, T. E., Kaloshin, M. M., Kargin, N. I., Kornilov, N. V., Nizovtsev, A. P.

    Published in Journal of applied spectroscopy (2023)
    “…A method for estimating the isotopic composition and concentration of N V -centers in diamond using Raman scattering and photoluminescence spectra is…”
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    Journal Article
  17. 17

    Electron Transport in PHEMT AlGaAs/InGaAs/GaAs Quantum Wells at Different Temperatures: Influence of One-Side δ-Si Doping by Safonov, D. A., Vinichenko, A. N., Kargin, N. I., Vasil’evskii, I. S.

    Published in Semiconductors (Woodbury, N.Y.) (01-02-2018)
    “…The influence of the concentration of δ doping with Si on the electron transport properties of Al 0.25 Ga 0.75 As/In 0.2 Ga 0.8 As/GaAs pseudomorphic quantum…”
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    Journal Article
  18. 18

    Numerical Optimization of Grating Coupler Parameters for InP-based Photonic Circuits by Grishakov, K. S., Kargin, N. I.

    “…We have performed 2D finite-difference time-domain (FDTD) simulations of fiber to chip coupling. The experimental semiconductor structure of the waveguide…”
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    Conference Proceeding
  19. 19

    Comparison of the thermal interdiffusion phenomena in InGaAs/GaAs and InGaAs/AlGaAs strained heterostructures by Vasilkova, E.I., Klochkov, A.N., Vinichenko, A.N., Kargin, N.I., Vasil'evskii, I.S.

    Published in Surfaces and interfaces (01-04-2022)
    “…The effect of 5 min high-temperature thermal annealing on InGaAs/GaAs strained superlattices and InGaAs/AlGaAs PHEMT structures grown by molecular beam epitaxy…”
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    Journal Article
  20. 20

    Electron-Quantum Transport in Pseudomorphic and Metamorphic In0.2Ga0.8As-Based Quantum Wells by Vinichenko, A. N., Safonov, D. A., Kargin, N. I., Vasil’evskii, I. S.

    Published in Semiconductors (Woodbury, N.Y.) (01-03-2019)
    “…Metamorphic high-electron-mobility transistor (HEMT) structures based on deep In 0.2 Ga 0.8 As/In 0.2 Al 0.8 As quantum wells (0.7 eV for Γ electrons) with…”
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    Journal Article