Search Results - "Karasyuk, V A"
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Generating T centres in photonic silicon-on-insulator material by ion implantation
Published in New journal of physics (01-10-2021)“…Global quantum networks will benefit from the reliable fabrication and control of high-performance solid-state telecom photon-spin interfaces. T radiation…”
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2
Photoluminescence method for detecting trace levels of iron in ultrapure silicon
Published in Applied physics letters (14-05-2001)“…A nondestructive technique is presented for the determination of trace levels of interstitial iron contamination in ultrapure silicon. This approach is based…”
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3
Ultrahigh-resolution photoluminescence studies of excitons bound to boron in silicon in magnetic fields
Published in Physical review. B, Condensed matter (15-04-1993)Get full text
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4
Strain Effects on Bound Exciton Luminescence in Epitaxial GaAs Studied Using a Wafer Bending Technique
Published in physica status solidi (b) (01-12-1998)“…Wafer bending was used to achieve externally controlled biaxial and uniaxial strains in high purity GaAs epilayers grown by MBE to study strain effects on…”
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5
Comment on "Direct determination of the electron-electron-hole Auger threshold energy in silicon"
Published in Physical review letters (20-11-1995)Get full text
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6
Performance analysis and control strategy for pixelated dynamic gain equalizers
“…Dynamic network reconfigurations change gain profiles of optical amplifiers employed for signal amplification. Fixed gain flattening filters cannot compensate…”
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Conference Proceeding -
7
Intrinsic splitting of the acceptor ground state in silicon
Published in Physical review letters (24-10-1994)Get full text
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8
Observation of autodissociating excited states of excitonic molecules
Published in Physical review. B, Condensed matter (15-01-1993)Get full text
Journal Article -
9
Ultrahigh-resolution photoluminescence studies of excitons bound to boron in silicon under uniaxial stress
Published in Physical review. B, Condensed matter (15-05-1992)Get full text
Journal Article -
10
Splitting of the ground state of shallow acceptors in silicon
Published in Solid state communications (01-02-1995)“…The results of near infra-red piezo-photoluminescence, photoluminescence excitation, and absorption spectroscopy of silicon doped with Al, Ga, and In performed…”
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11
Fourier-transform magnetophotoluminescence spectroscopy of donor-bound excitons in GaAs
Published in Physical review. B, Condensed matter (15-06-1994)Get full text
Journal Article -
12
T centres in photonic silicon-on-insulator material
Published 05-03-2021“…Global quantum networks will benefit from the reliable creation and control of high-performance solid-state telecom photon-spin interfaces. T radiation damage…”
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Journal Article -
13
Fourier-transform photoluminescence spectroscopy of excitons bound to group-III acceptors in silicon: Zeeman effect
Published in Physical review. B, Condensed matter (15-10-1996)Get full text
Journal Article -
14
Origin of sharp lines in photoluminescence emission from submonolayers of InAs in GaAs
Published in Physical review. B, Condensed matter (15-02-1997)Get full text
Journal Article -
15
Fourier-transform photoluminescence spectroscopy of excitons bound to group-III acceptors in silicon: Uniaxial stress
Published in Physical review. B, Condensed matter (15-12-1997)Get full text
Journal Article -
16
Photoluminescence from bound multiexciton complexes in Si:P under high uniaxial stress
Published in Physical review. B, Condensed matter (15-02-1992)Get full text
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17
Photoluminescence of excitons bound to the isoelectronic hydrogen-related defects B711 (1.1377 eV) in silicon
Published in Physical review. B, Condensed matter (15-09-1994)Get full text
Journal Article -
18
Photoluminescence of excitons bound to the isoelectronic hydrogen-related defects B80(1.1470 eV) and B191(1.1431 eV) in silicon
Published in Physical review. B, Condensed matter (15-02-1995)Get full text
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19
Fine structure of a bound multiexciton complex in CdTe
Published in Physical review. B, Condensed matter (15-12-1994)Get full text
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20
Photoluminescence of excitons bound to the radiation damage defects B41(1.1509 eV) in silicon
Published in Solid state communications (1996)Get full text
Journal Article