Search Results - "Karandashev, S.A."

Low frequency noise in P-InAsSbP/n-InAs infrared light emitting diode-photodiode pairs by Dyakonova, N., Karandashev, S.A., Levinshtein, M.E., Matveev, B.A., Remennyi, M.A., Usikova, A.A.

“…Low frequency noise in P-InAsSbP/n-InAs infrared light emitting diode- photodiode pairs is investigated for the first time at 300 K. It is shown that…”
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Low frequency noise in p-InAsSbP/n-InAs/n-InAsSbP and p-InAsSbP/n-InAsSbP mid-IR light emitting diodes by Dyakonova, N., Karandashev, S.A., Levinshtein, M.E., Matveev, B.A., Remennyi, M.A.

“…•In InAs- and InAsSbP-based Light Emitting Diodes, the amplitude of the optical output 1/f noise is less than the amplitude of the reverse bias current noise…”
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Low frequency noise in double heterostructure P-InAsSbP/n-InAs mid-IR photodiodes at cryogenic temperature: Photovoltaic mode and forward bias by Dyakonova, N., Karandashev, S.A., Levinshtein, M.E., Matveev, B.A., Remennyi, M.A.

“…Low frequency photocurrent noise, as well as the forward current noise are studied for the first time in mid-infrared InAsSbP/InAs double heterostructure…”
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InAsSbP Photodiodes for 2.6-2.8-[micro]m Wavelengths by Il'inskaya, N.D, Karandashev, S.A, Lavrov, A.A, Matveev, B.A, Remennyi, M.A, Stus, N.M, Usikova, A.A

“…Research data for photovoltaic, I-V and C-V characteristics of InAsSbP/InAs heterostructure photodiodes that operate at room temperature in the wavelength…”
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P-InAsSbP/p-InAs0.88Sb0.12/n-InAs0.88Sb0.12/n+-InAs PDs with a smooth p-n junction by Il'inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus', N.M., Usikova, A.A.

“…•Linear impurity distribution near the p-n junction.•Low unit area capacity (Co/A)77 K = 4.3 × 10−8 F × cm−2).•D4.7μm,300K∗ as high as 6.5 × 108 Jones…”
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Corrigendum to “InAsSbP/InAs0.9Sb0.1/InAs DH photodiodes ([formula omitted]0.1 = 5.2 μm, 300 K) operating in the 77–353 K temperature range” [Infrared Phys. Technol. 73 (2015) 232–237] by Brunkov, P.N., Il’inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus’, N.M., Usikova, A.A.

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InAsSbP/InAs0.9Sb0.1/InAs DH photodiodes (λ0.1=5.2μm, 300K) operating in the 77–353К temperature range by Brunkov, P.N., Il’inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus’, N.M., Usikova, A.A.

“…Double heterostructure back-side illuminated photodiodes with a 10-μm thick InAs0.9Sb0.1 active layer have been fabricated, studied and characterized in the…”
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InAsSbP/InAs 0.9 Sb 0.1 /InAs DH photodiodes ( λ 0.1 = 5.2 μm, 300 K) operating in the 77–353 К temperature range by Brunkov, P.N., Il’inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus’, N.M., Usikova, A.A.

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Photodiode 1 x 64 linear array based on a double p-InAsSbP/n-In[As.sub.0.92][Sb.sub.0.08]/[n.sup.+]-InAs heterostructure by Il'inskaya, N.D, Karandashev, S.A, Karpukhina, N.G, Lavrov, A.A, Matveev, B.A, Remennyi, M.A, Stus, N.M, Usikova, A.A

“…The results of studies of the current-voltage characteristics and of the photoelectric and luminescence properties of a monolithic diode 1 x 64 linear array…”
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P-InAsSbP/n-InAs single heterostructure back-side illuminated 8×8 photodiode array by Brunkov, P.N., Il’inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus’, N.M., Usikova, A.A.

“…•BLIP regime starting from 190K at 3μm.•Capacitance as small as 1.3×10−7Fcm−2, 80K.•Good uniformity of diode parameters in 8×8 PD matrix…”
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Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures by Zakgeim, A. L., Il’inskaya, N. D., Karandashev, S. A., Lavrov, A. A., Matveev, B. A., Remennyy, M. A., Stus’, N. M., Usikova, A. A., Cherniakov, A. E.

“…The spatial distribution of equilibrium and nonequilibrium (including luminescent) IR (infrared) radiation in flip-chip photodiodes based on InAsSbP/InAs…”
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Low dark current P-InAsSbP/n-InAs/N-InAsSbP/n+-InAs double heterostructure back-side illuminated photodiodes by Brunkov, P.N., Il’inskaya, N.D., Karandashev, S.A., Karpukhina, N.G., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus’, N.M., Usikova, A.A.

“…•Lowest capacitance of InAs heterojunction PD.•Fast response.•High detectivity in the 3μm range.•BLIP operation at 150K at 3μm.•Flip-chip design…”
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P-InAsSbP/[n.sup.0]-InAs/[n.sup.+]-InAs photodiodes for operation at moderate cooling by Brunkov, P.N, Il'inskaya, N.D, Karandashev, S.A, Latnikova, N.M, Lavrov, A.A, Matveev, B.A, Petrov, A.S, Remennyi, M.A, Sevostyanov, E.N, Stus, N.M

“…InAs single hetero structure photodiodes were considered as alternatives to cooled CdHgTe-based detectors sensitive to radiation around 3 pm spectral region in…”
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Nonuniformity in the spatial distribution of negative luminescence in InAsSb by Karandashev, S.A, Matveev, B.A, Mzhelskii, I.V, Polovinkin, V.G, Remennyi, M.A, Rybalchenko, A. Yu, Stus, N.M

“…The spatial nonuniformity of negative luminescence and current crowding in InAsSb(P) mid-IR photodiodes is analyzed in relation to the applied voltage and…”
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Current-voltage characteristics and photocurrent collection in radially symmetric front-surface-illuminated InAsSb(P) photodiodes by Karandashev, S. A., Matveev, B. A., Ratushnyi, V. I., Remennyi, M. A., Rybal’chenko, A. Yu, Stus’, N. M.

“…The I–V characteristics of front-surface-illuminated InAsSb(P) photodiodes are simulated in terms of a simple model that takes into account the radial…”
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Cooled P-InAsSbP/n-InAs/N-InAsSbP double heterostructure photodiodes by Brunkov, P.N., Il'inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus', N.M., Usikova, A.A.

“…•We tested for the first time InAs double heterostructure photodiodes at low temperatures.•InAs DH photodiodes exhibited superior performance compared to any…”
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Spatial nonuniformity of current flow and its consideration in determination of characteristics of surface illuminated InAsSbP/InAs-based photodiodes by Zotova, N. V., Karandashev, S. A., Matveev, B. A., Remennyy, M. A., Rybal’chenko, A. Yu, Stus’, N. M.

“…Current-voltage characteristics of surface-irradiated photodiodes based on the InAsSbP/InAs structures are analyzed using experimental data on the distribution…”
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Front surface illuminated InAsSb photodiodes (long-wavelength cutoff λ0.1 = 4.5 μm) operating at temperatures of 25–80°C by Il’inskaya, N. D., Zakgeim, A. L., Karandashev, S. A., Matveev, B. A., Ratushnyi, V. I., Remennyy, M. A., Rybal’chenko, A. Yu, Stus’, N. M., Chernyakov, A. E.

“…The current-voltage characteristics and temperature dependences of zero-bias dynamic resistance are analyzed for InAsSb photodiodes, with consideration for…”
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Low Voltage CO 2-Gas Sensor Based on III-V Mid-IR Immersion Lens Diode Optopairs: Where we Are and How Far we Can Go? by Sotnikova, G.Yu, Gavrilov, G.A., Aleksandrov, S.E., Kapralov, A.A., Karandashev, S.A., Matveev, B.A., Remennyy, M.A.

“…This study presents a comparative analysis of parameters of infrared radiation source and detector hardware that are most important for the creation of…”
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Low voltage episide down bonded mid-IR diode optopairs for gas sensing in the 3.3–4.3 μm spectral range by Remennyi, M.A., Zotova, N.V., Karandashev, S.A., Matveev, B.A., Stus’, N.M., Talalakin, G.N.

“…We describe “flip chip bonded” In(Ga)As and InAsSb heterostructure photodiodes and light emitting diodes (LEDs) ( λ=3.3–4.3 μm) grown onto n-InAs substrate…”
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