Search Results - "Karam, N H"

Band gap-voltage offset and energy production in next-generation multijunction solar cells by King, R. R., Bhusari, D., Boca, A., Larrabee, D., Liu, X.-Q., Hong, W., Fetzer, C. M., Law, D. C., Karam, N. H.

“…The potential for new 4‐, 5‐, and 6‐junction solar cell architectures to reach 50% efficiency is highly leveraging for the economics of concentrator…”
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Solar cell generations over 40% efficiency by King, R. R., Bhusari, D., Larrabee, D., Liu, X.-Q., Rehder, E., Edmondson, K., Cotal, H., Jones, R. K., Ermer, J. H., Fetzer, C. M., Law, D. C., Karam, N. H.

“…ABSTRACT Multijunction III‐V concentrator cells of several different types have demonstrated solar conversion efficiency over 40% since 2006, and represent the…”
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40% efficient metamorphic GaInP ∕ GaInAs ∕ Ge multijunction solar cells by King, R. R., Law, D. C., Edmondson, K. M., Fetzer, C. M., Kinsey, G. S., Yoon, H., Sherif, R. A., Karam, N. H.

“…An efficiency of 40.7% was measured and independently confirmed for a metamorphic three-junction GaInP ∕ GaInAs ∕ Ge cell under the standard spectrum for…”
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High efficiency Inverted Metamorphic (IMM) solar cells by Boisvert, J., Law, D., King, R., Rehder, E., Chiu, P., Bhusari, D., Fetzer, C., Liu, X., Hong, W., Mesropian, S., Woo, R., Edmondson, K., Cotal, H., Krut, D., Singer, S., Wierman, S., Karam, N. H.

“…High efficiency Inverted Metamorphic (IMM) multi-junction solar cells have been under development at Spectrolab for use in space and near space applications…”
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High-efficiency metamorphic GaInP/GaInAs/Ge solar cells grown by MOVPE by Fetzer, C.M., King, R.R., Colter, P.C., Edmondson, K.M., Law, D.C., Stavrides, A.P., Yoon, H., Ermer, J.H., Romero, M.J., Karam, N.H.

“…This paper focuses on the metal-organic vapor-phase epitaxy growth of 3-junction (3J) solar cells where the epitaxial Ga 0.44In 0.56P top and Ga 0.92In 0.08As…”
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Future technology pathways of terrestrial III–V multijunction solar cells for concentrator photovoltaic systems by Law, Daniel C., King, R.R., Yoon, H., Archer, M.J., Boca, A., Fetzer, C.M., Mesropian, S., Isshiki, T., Haddad, M., Edmondson, K.M., Bhusari, D., Yen, J., Sherif, R.A., Atwater, H.A., Karam, N.H.

“…Future terrestrial concentrator cells will likely feature four or more junctions. The better division of the solar spectrum and the lower current densities in…”
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1.6/1.1 eV metamorphic GaInP/GaInAs solar cells grown by MOVPE on Ge by Fetzer, C.M., Yoon, H., King, R.R., Law, D.C., Isshiki, T.D., Karam, N.H.

“…This paper focuses on the metal–organic vapor-phase epitaxy (MOVPE) growth of 2-junction (2J) solar cells where epitaxial Ga 0.29In 0.71P top and Ga 0.77In…”
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Direct Semiconductor Bonded 5J Cell for Space and Terrestrial Applications by Chiu, P. T., Law, D. C., Woo, R. L., Singer, S. B., Bhusari, D., Hong, W. D., Zakaria, A., Boisvert, J., Mesropian, S., King, R. R., Karam, N. H.

“…Spectrolab has demonstrated a 2.2/1.7/1.4/1.05/0.73 eV 5J cell with an efficiency of 37.8% under 1 sun AM1.5G spectrum and 35.1% efficiency for 1 sun AM0. The…”
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Effect of growth rate and gallium source on GaAsN by Kurtz, Sarah, Geisz, J. F., Keyes, B. M., Metzger, W. K., Friedman, D. J., Olson, J. M., Ptak, A. J., King, R. R., Karam, N. H.

“…GaAs 1−x N x with x=0.2% is grown by metal–organic chemical vapor deposition with growth rates between 2 and 7 μm/h and with two gallium sources. The GaAsN…”
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High-quality GaAs on sawtooth-patterned Si substrates by ISMAIL, K, LEGOUES, F, KARAM, N. H, CARTER, J, SMITH, H. I

“…We report a novel technique for growing GaAs on Si substrates with a low density of threading dislocations. The process involves patterning a 200 nm period…”
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Fabrication and characterization of CdZnTe radiation detectors with a new P-I-N design by Sudhaesanan, R., Vakerlis, G. D., Karam, N. H.

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GaAs-based diode lasers on Si with increased lifetime obtained by using strained InGaAs active layer by Choi, H. K., Wang, C. A., Karam, N. H.

“…Strained InGaAs/AlGaAs quantum well diode lasers have been fabricated on Si substrates for the first time. A GaAs buffer layer was grown on each Si wafer by…”
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Direct writing of GaAs monolayers by laser-assisted atomic layer epitaxy by Karam, N. H., Liu, H., Yoshida, I., Bedair, S. M.

“…Direct writing of GaAs epitaxial monolayers has been achieved by laser-assisted atomic layer epitaxy (LALE) technique on GaAs substrates. Sequential exposures…”
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Development of advanced space solar cells at Spectrolab by Boisvert, J, Law, D, King, R, Bhusari, D, Liu, X, Zakaria, A, Hong, W, Mesropian, S, Larrabee, D, Woo, R, Boca, A, Edmondson, K, Krut, D, Peterson, D, Rouhani, K, Benedikt, B, Karam, N H

“…High efficiency multi-junction solar cells utilizing inverted metamorphic and semiconductor bonding technology are being developed at Spectrolab for use in…”
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Effectiveness of strained-layer superlattices in reducing defects in GaAs epilayers grown on silicon substrates by EL-MASRY, N, TARN, J. C. L, HUMPHREYS, T. P, HAMAGUCHI, N, KARAM, N. H, BEDAIR, S. M

“…In GaAs-GaAsP strained-layer superlattices grown lattice matched to GaAs are effective buffer layers in reducing dislocations in epitaxial GaAs films grown on…”
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CdZnTe photodiode arrays for medical imaging by Sudharsanan, R, Parodos, T, Ruzin, A, Nemirovsky, Y, Karam, N H

“…In this paper, we report on the design, fabrication, and performance of the first CdZnTe Schottky photodiode arrays for radiation detection. High pressure…”
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Growth and characterization of inTISb for IR-detectors by Karam, N. H., Sudharsanan, R., Parodos, T., Dodd, M. A.

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Patterning and characterization of large-area quantum wire arrays by Ismail, K., Burkhardt, M., Smith, Henry I., Karam, N. H., Sekula-Moise, P. A.

“…Large-area arrays of parallel quantum wires of 30–80 nm width are achieved using a combination of x-ray lithography, wet chemical etching, and low-pressure…”
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Formation of low dislocation density silicon-on-insulator by a single implantation and annealing by EL-GHOR, M. K, PENNYCOOK, S. J, NAMAVAR, F, KARAM, N. H

“…High quality silicon-on-insulator structures have been formed with dislocation densities in the top silicon layer below 104 cm−2 by oxygen implantation and…”
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Low-temperature (250 °C) selective epitaxy of GaAs films and p-n junction by laser-assisted metalorganic chemical vapor deposition by KARAM, N. H, LIU, H, YOSHIDA, I, BEDAIR, S. M

“…Low-temperature selective epitaxial growth of device quality GaAs has been achieved by laser-assisted chemical vapor deposition (LCVD). GaAs substrates…”
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