Search Results - "Kapre, R."

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  1. 1

    Self-assembled biomimetic [2Fe2S]-hydrogenase-based photocatalyst for molecular hydrogen evolution by Kluwer, A.M, Kapre, R, Hartl, F, Lutz, M, Spek, A.L, Brouwer, A.M, van Leeuwen, P.W.N.M, Reek, J.N.H

    “…The large-scale production of clean energy is one of the major challenges society is currently facing. Molecular hydrogen is envisaged as a key green fuel for…”
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    Journal Article
  2. 2

    Electronic Structure of Neutral and Monoanionic Tris(benzene-1,2-dithiolato)metal Complexes of Molybdenum and Tungsten by Kapre, Ruta R, Bothe, Eberhard, Weyhermüller, Thomas, DeBeer George, Serena, Wieghardt, Karl

    Published in Inorganic chemistry (09-07-2007)
    “…The reaction of 3 equiv of the ligand 2-mercapto-3,5-di-tert-butylaniline, H2[LN,S], or 3,5-di-tert-butyl-1,2-benzenedithiol, H2[LS,S], with 1 equiv of…”
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    Journal Article
  3. 3

    Reliability Aspects of SONOS Based Analog Memory for Neuromorphic Computing by Ramkumar, K., Prabhakar, V., Agrawal, V., Hinh, L., Saha, S., Samanta, S., Kapre, R. M.

    “…Reliability of 40nm SONOS (Si-Oxide-Nitride-Oxide-Si) based non-volatile memory (NVM) cell has been evaluated for analog memory to perform neuromorphic…”
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    Conference Proceeding
  4. 4

    The molecular and electronic structures of monomeric cobalt complexes containing redox noninnocent o-aminobenzenethiolate ligands by Sproules, Stephen, Kapre, Ruta R., Roy, Nabarun, Weyhermüller, Thomas, Wieghardt, Karl

    Published in Inorganica Chimica Acta (15-10-2010)
    “…Monoanionic cobalt complexes with two bidentate or one tetradentate o-aminobenzenethiolate ligands have been prepared and structurally characterized. The…”
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    Journal Article
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    Monolayer chemical beam etching : reverse molecular beam epitaxy by TSANG, W. T, CHIU, T. H, KAPRE, R. M

    Published in Applied physics letters (20-12-1993)
    “…We have developed an etching process with real-time counting of each monolayer removed, thus achieving etching with monolayer precision and control. This is an…”
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    Journal Article
  8. 8

    Control of lasing wavelength in distributed feedback lasers by angling the active stripe with respect to the grating by Tsang, W.T., Kapre, R.M., Logan, R.A., Tanbun-Ek, T.

    Published in IEEE photonics technology letters (01-09-1993)
    “…We proposed and demonstrated a new and very simple technique of varying the lasing wavelength of distributed feedback (DFB) lasers with the need for…”
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    Journal Article
  9. 9

    Highly strained GaAs/InGaAs/AlAs resonant tunneling diodes with simultaneously high peak current densities and peak-to-valley ratios at room temperature by KAPRE, R. M, MADHUKAR, A, GUHA, S

    Published in Applied physics letters (20-05-1991)
    “…Highly strained In0.33Ga0.67As/AlAs-based resonant tunneling diodes have been fabricated on GaAs(100) substrates without the use of thick strain relieving…”
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    Journal Article
  10. 10

    Reactive chemical beam etching of InP inside a chemical beam epitaxial growth chamber using phosphorus trichloride by TSANG, W. T, KAPRE, R, SCIORTINO, P. F

    Published in Applied physics letters (26-04-1993)
    “…We have extended the capability and versatility of a chemical beam epitaxial (CBE) system by demonstrating reactive chemical beam etching (RCBE) of InP using…”
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    Journal Article
  11. 11

    High-contrast optically bistable optoelectronic switch based on InGaAs/GaAs (100) asymmetric fabry-Perot modulator, detector, and resonant tunneling diode by LI CHEN, KAPRE, R. M, KEZHONG HU, MADHUKAR, A

    Published in Applied physics letters (23-09-1991)
    “…The realization at room temperature of a high contrast ratio (20:1) and an on-state reflectivity of 46.5% in an optically bistable switch involving strained…”
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    Journal Article
  12. 12

    High contrast ratio self-electro-optic effect devices based on inverted InGaAs/GaAs asymmetric Fabry-Perot modulator by LI CHEN, KEZHONG HU, KAPRE, R. M, MADHUKAR, A

    Published in Applied physics letters (27-01-1992)
    “…We demonstrate a new class of ‘‘normally off’’ high contrast ratio asymmetric Fabry–Perot (ASFP) reflection modulators based on a blue-shift of the Fabry–Perot…”
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    Journal Article
  13. 13

    Realization of low defect density, ultrathick, strained InGaAs/GaAs multiple quantum well structures via growth on patterned GaAs (100) substrates by MADHUKAR, A, RAJKUMAR, K. C, LI CHEN, GUHA, S, KAVIANI, K, KAPRE, R

    Published in Applied physics letters (05-11-1990)
    “…Growth of low defect density highly strained InxGa1−xAs/GaAs multiple quantum well (MQW) structures of thicknesses suited for application in spatial light…”
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    Journal Article
  14. 14

    Realization and analysis of GaAs/AlAs/In0.1Ga0.9As based resonant tunneling diodes with high peak-to-valley ratios at room temperature by KAPRE, R, MADHUKAR, A, KAVIANI, K, GUHA, S, RAJKUMAR, K. C

    Published in Applied physics letters (05-03-1990)
    “…Investigations of pseudomorphic resonant tunneling diodes based on the GaAs/AlAs/In0.1Ga0.9As material system reveal that the use of undoped In0.1Ga0.9As…”
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    Journal Article
  15. 15

    Carbon-doped InGaP/GaAs/InGaP double heterojunction bipolar transistors by Chen, Y.K., Kapre, R., Tsang, W.T., Wu, M.C.

    Published in IEEE transactions on electron devices (01-11-1992)
    “…Summary form only given. The authors have fabricated the first carbon-doped InGaP/GaAs/InGaP double-heterojunction bipolar transistors which capitalize on the…”
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    Journal Article
  16. 16

    Low-threshold InGaAs strained-layer quantum well lasers (λ=0.98 μm) with GaInP cladding layers prepared by chemical beam epitaxy by Tsang, W. T., Kapre, R., Wu, M. C., Chen, Y. K.

    Published in Applied physics letters (17-08-1992)
    “…We report on the InGaAs/GaAs/GaInP strained-layer quantum well (QW) lasers grown by chemical beam epitaxy (CBE). The single QW broad-area layers have a very…”
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    Journal Article
  17. 17

    Molecular and Electronic Structures of Oxo-bis(benzene-1,2-dithiolato)chromate(V) Monoanions. A Combined Experimental and Density Functional Study by Kapre, Ruta, Ray, Kallol, Sylvestre, Isabelle, Weyhermüller, Thomas, DeBeer George, Serena, Neese, Frank, Wieghardt, Karl

    Published in Inorganic chemistry (01-05-2006)
    “…Two oxo-bis(benzene-1,2-dithiolato)chromate(V) complexes, namely, [CrO(LBu)2]1- and [CrO(LMe)2]1-, have been synthesized and studied by UV−vis, EPR, magnetic…”
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    Journal Article
  18. 18

    InGaAs/InGaAsP integrated tunable detector grown by chemical beam epitaxy by CHOA, F. S, TSANG, W. T, LOGAN, R. A, GNALL, R. P, KOCH, T. L, BURRUS, C. A, WU, M. C, CHEN, Y. K, KAPRE, R

    Published in Applied physics letters (27-09-1993)
    “…By controlling the thickness of the grating depth with chemical beam epitaxy (CBE) growth time, we report in this letter the design and performance of an…”
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    Journal Article
  19. 19

    Self-Assembled Biomimetic [2Fe2S]-Hydrogenasebased Photocatalyst for Molecular Hydrogen Evolution by Kluwer, A. M., Kapre, R., Harti, F., Lutz, M., Spek, A. L., Brouwer, A. M., van Leeuwen, P. W. N. M., Reek, J. N. H., Rebek, Julius

    “…The large-scale production of clean energy is one of the major challenges society is currently facing. Molecular hydrogen is envisaged as a key green fuel for…”
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    Journal Article
  20. 20

    Surface roughness during chemical beam etching and its remedy by enhanced cation diffusion by Chiu, T. H., Williams, M. D., Ferguson, J. F., Tsang, W. T., Kapre, R. M.

    Published in Applied physics letters (25-07-1994)
    “…Reflection high-energy electron diffraction has been used to monitor the layer-by-layer removal of GaAs during chemical beam etching. The etching is…”
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    Journal Article