Search Results - "Kappers, M. J"

Lattice Location of Mg in GaN: A Fresh Look at Doping Limitations by Wahl, U, Amorim, L M, Augustyns, V, Costa, A, David-Bosne, E, Lima, T A L, Lippertz, G, Correia, J G, da Silva, M R, Kappers, M J, Temst, K, Vantomme, A, Pereira, L M C

“…Radioactive ^{27}Mg (t_{1/2}=9.5  min) was implanted into GaN of different doping types at CERN's ISOLDE facility and its lattice site determined via β^{-}…”
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Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures by Massabuau, F. C.-P., Sahonta, S.-L., Trinh-Xuan, L., Rhode, S., Puchtler, T. J., Kappers, M. J., Humphreys, C. J., Oliver, R. A.

“…In a wide variety of InGaN/GaN quantum well (QW) structures, defects are observed which consist of a trench partially or fully enclosing a region of the QW…”
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Defect-Induced Ferromagnetism in Co-doped ZnO by Khare, N., Kappers, M. J., Wei, M., Blamire, M. G., MacManus-Driscoll, J. L.

“…A novel soft‐solution technique is used to grow epitaxial Zn0.98Co0.02O films on the c‐plane (0001) of a single‐crystal sapphire substrate. Annealing the films…”
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The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem by Massabuau, F. C.-P., Davies, M. J., Oehler, F., Pamenter, S. K., Thrush, E. J., Kappers, M. J., Kovács, A., Williams, T., Hopkins, M. A., Humphreys, C. J., Dawson, P., Dunin-Borkowski, R. E., Etheridge, J., Allsopp, D. W. E., Oliver, R. A.

“…The impact of trench defects in blue InGaN/GaN light emitting diodes (LEDs) has been investigated. Two mechanisms responsible for the structural degradation of…”
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Critical thickness calculations for InGaN/GaN by Holec, D., Costa, P.M.F.J., Kappers, M.J., Humphreys, C.J.

“…A model based on the overall energy balance is used to calculate the critical thickness for an InGaN epitaxial layer on a GaN substrate. The critical thickness…”
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Mg doping affects dislocation core structures in GaN by Rhode, S K, Horton, M K, Kappers, M J, Zhang, S, Humphreys, C J, Dusane, R O, Sahonta, S -L, Moram, M A

“…Aberration-corrected scanning transmission electron microscopy was used to investigate the core structures of threading dislocations in undoped GaN films with…”
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The effects of Si-doped prelayers on the optical properties of InGaN/GaN single quantum well structures by Davies, M. J., Dawson, P., Massabuau, F. C.-P., Oliver, R. A., Kappers, M. J., Humphreys, C. J.

“…In this paper, we report on the effects of including Si-doped (In)GaN prelayers on the low temperature optical properties of a blue-light emitting InGaN/GaN…”
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Highlighting threading dislocations in MOVPE-grown GaN using an in situ treatment with SiH4 and NH3 by OLIVER, R. A, KAPPERS, M. J, SUMNER, J, DATTA, R, HUMPHREYS, C. J

“…Fast-turnaround, accurate methods for the assessment of threading dislocation (TD) densities in GaN are an essential research tool. Here, we present an in situ…”
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Surface morphology of homoepitaxial c-plane GaN: Hillocks and ridges by Oehler, F., Zhu, T., Rhode, S., Kappers, M.J., Humphreys, C.J., Oliver, R.A.

“…We investigated the properties of a GaN epilayer grown by metalorganic vapour phase epitaxy on a c-plane bulk GaN substrate obtained by ammonothermal growth…”
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Luminescence of Eu3+ in GaN(Mg, Eu): Transitions from the 5D1 level by Singh, A. K., O'Donnell, K. P., Edwards, P. R., Cameron, D., Lorenz, K., Kappers, M. J., Boćkowski, M., Yamaga, M., Prakash, R.

“…Eu-doped GaN(Mg) exemplifies hysteretic photochromic switching between two configurations, Eu0 and Eu1(Mg), of the same photoluminescent defect. Using the…”
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Photoluminescence studies of cubic GaN epilayers by Church, S. A., Hammersley, S., Mitchell, P. W., Kappers, M. J., Sahonta, S. L., Frentrup, M., Nilsson, D., Ward, P. J., Shaw, L. J., Wallis, D. J., Humphreys, C. J., Oliver, R. A., Binks, D. J., Dawson, P.

“…The luminescence properties of cubic GaN films grown upon 3C‐SiC/Si (001) substrates by MOCVD were investigated. The spectra show luminescence peaks which are…”
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Dislocation core structures in Si-doped GaN by Rhode, S. L., Horton, M. K., Fu, W. Y., Sahonta, S.-L., Kappers, M. J., Pennycook, T. J., Humphreys, C. J., Dusane, R. O., Moram, M. A.

“…Aberration-corrected scanning transmission electron microscopy was used to investigate the core structures of threading dislocations in plan-view geometry of…”
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The influence of coalescence time on unintentional doping in GaN/sapphire by Das Bakshi, S., Sumner, J., Kappers, M.J., Oliver, R.A.

“…Unintentional n-type doping is commonly observed to occur during the growth of nominally undoped GaN on sapphire. Scanning capacitance microscopy reveals that…”
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Threading dislocation reduction in (0001) GaN thin films using SiNx interlayers by KAPPERS, M. J, DATTA, R, OLIVER, R. A, RAYMENT, F. D. G, VICKERS, M. E, HUMPHREYS, C. J

“…The ability of in situ SiNx interlayers to lower the density of threading dislocations (TDs) has been studied for the growth of c-plane (0001) GaN epilayers on…”
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The effect of dislocations on the efficiency of InGaN/GaN solar cells by Zhang, Y., Kappers, M.J., Zhu, D., Oehler, F., Gao, F., Humphreys, C.J.

“…Two solar cells based on an InGaN/GaN p–i–n hetero-junction, but having different dislocation densities, were fabricated and characterized. The structures were…”
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Evaluation of growth methods for the heteroepitaxy of non-polar (112¯0) GAN on sapphire by MOVPE by Oehler, F., Sutherland, D., Zhu, T., Emery, R., Badcock, T.J., Kappers, M.J., Humphreys, C.J., Dawson, P., Oliver, R.A.

“…Non-polar a-plane gallium nitride (GaN) films have been grown on r-plane (11¯02) sapphire by metal organic vapour phase epitaxy (MOVPE). A total of five in…”
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Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope by Smeeton, T. M., Kappers, M. J., Barnard, J. S., Vickers, M. E., Humphreys, C. J.

“…InGaN quantum wells have been found to be extremely sensitive to exposure to the electron beam in the transmission electron microscope (TEM). High-resolution…”
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High excitation carrier density recombination dynamics of InGaN/GaN quantum well structures: Possible relevance to efficiency droop by Davies, M. J., Badcock, T. J., Dawson, P., Kappers, M. J., Oliver, R. A., Humphreys, C. J.

“…We report on the optical properties of InGaN/GaN quantum well structures measured at 10 K as a function of excitation density. At high excitation power…”
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The impact of substrate miscut on the microstructure and photoluminescence efficiency of (0001) InGaN quantum wells grown by a two-temperature method by Massabuau, F.C.-P., Tartan, C.C., Traynier, R., Blenkhorn, W.E., Kappers, M.J., Dawson, P., Humphreys, C.J., Oliver, R.A.

“…The impact of the miscut of a (0001) c-plane substrate on the structural and optical properties of InGaN/GaN quantum wells grown by metal-organic vapour phase…”
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Defect reduction in nonpolar and semipolar GaN using scandium nitride interlayers by Moram, M.A., Johnston, C.F., Kappers, M.J., Humphreys, C.J.

“…Nonpolar (112¯0) and semipolar (112¯2) GaN films were grown on sapphire by metalorganic vapour phase epitaxy using ScN interlayers of varying thicknesses. A…”
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