Search Results - "Kannan, E. S."

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  1. 1

    Photo-induced exfoliation—A facile synthesis route for atomristor prototype by Malavika, C., Manoj Kumar, B., Kannan, E. S.

    Published in Applied physics letters (04-04-2022)
    “…Brain inspired memory prototypes, such as atomristors, are touted as next generation two terminal memories for neuromorphic computation. To make rapid progress…”
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    Journal Article
  2. 2

    Thermal bi-stability and hysteresis in hetero-phase molybdenum di-selenide by Malavika, C., Anu Roshini, R., Kannan, E. S.

    Published in Applied physics letters (29-03-2021)
    “…In this paper, we demonstrate thermal bi-stability and hysteresis in hetero-phase molybdenum diselenide (h-MoSe2) consisting of 2H semiconducting MoSe2 and…”
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    Journal Article
  3. 3

    Pinched hysteresis as a regeneration marker for the semiconductor photocatalyst by Roshini, R. Anu, Kannan, E.S.

    Published in Materials chemistry and physics (01-01-2022)
    “…In this study, we demonstrate that pinched hysteresis can be used as a regenerative marker for the commonly used semiconductor-based photocatalyst such as…”
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    Journal Article
  4. 4

    Energy free microwave based signal communication using ratchet effect by Kannan, E. S., Bisotto, I., Portal, J.-C., Beck, T. J., Jalabert, L.

    Published in Applied physics letters (01-10-2012)
    “…The ratchet based microwave detectors are implemented as receivers of amplitude, frequency, and pulse width modulated signals. The detector has a peak…”
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    Journal Article
  5. 5

    Single crystal flake parameters of MoS2 and MoSe2 exfoliated using anodic bonding technique and its potential in rapid prototyping by Malavika, C, Roshini, R Anu, Surya Kanthi, R S, Kannan, E S

    Published in Journal of physics communications (01-10-2020)
    “…Rapid prototyping of devices using exfoliated Molybednum di-Sulphide (MoS2) and Molybdenum di-Selenide (MoSe2) requires an experimental protocol for maximizing…”
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    Journal Article
  6. 6

    Suitability of point kernel dose calculation techniques in brachytherapy treatment planning by Lakshminarayanan, Thilagam, Subbaiah, K V, Thayalan, K, Kannan, S E

    Published in Journal of medical physics (01-04-2010)
    “…Brachytherapy treatment planning system (TPS) is necessary to estimate the dose to target volume and organ at risk (OAR). TPS is always recommended to account…”
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    Journal Article
  7. 7

    Memory characteristics of InAs quantum dots embedded in GaAs quantum well by Kannan, E. S., Kim, Gil-Ho, Ritchie, D. A.

    Published in Applied physics letters (05-10-2009)
    “…The memory characteristics of InAs based quantum dot (QD) memory devices has been investigated by carrying out capacitance-voltage and current-voltage…”
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    Journal Article
  8. 8

    Probing the coexistence of semiclassical transport and localization in a two-dimensional electron gas using microwave radiation by Hsu, Chang-Shun, Kannan, E.S., Portal, J.-C., Liang, C.-T., Huang, C.F., Lin, S.-D.

    Published in Solid state communications (01-03-2013)
    “…We have performed magnetoresistance measurements on a GaAs/AlGaAs two-dimensional electron gas under microwave heating. Both the magneto-oscillations and…”
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    Journal Article
  9. 9

    Self-assembled InAs quantum dots to investigate the tunneling between edge states in an AlGaAs/GaAs double quantum well system by Kannan, E.S., Kim, Gil-Ho, Farrer, I., Ritchie, D.A.

    “…Self-assembled InAs quantum dots (QDs) embedded close to the tunnel barrier in the upper well of the double quantum well system act as a sensitive probe to…”
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    Journal Article Conference Proceeding
  10. 10

    Defect-Engineered Resistive Switching in van der Waal Metals by Manoj Kumar, B., Malavika, C., Kannan, E. S.

    Published in IEEE transactions on electron devices (01-11-2024)
    “…In this work, we demonstrated bipolar resistive switching (RS) in van der Waals metals [tantalum di-sulfide (2H-TaS2), tantalum di-selenide (2H-TaSe2)], and…”
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    Journal Article
  11. 11

    Structural, magnetic, optical and electronic properties of Gd2NiIrO6 by Bhavani, G., Durga Rao, T., Niranjan, Manish K., Kumar, K. Ramesh, Sattibabu, B., Petkov, V., Kannan, E.S., Reddy, B.H.

    Published in Physica. B, Condensed matter (15-12-2024)
    “…Polycrystalline Gd2NiIrO6 double perovskite compound was synthesized by the solid-state route. Rietveld refinement of the X-ray diffraction pattern revealed…”
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    Journal Article
  12. 12

    Highly ordered copper oxide (Cu2O) nanopillar arrays using template assisted electrodeposition technique and their temperature dependent electrical characteristics by Venkatesan, A., Kannan, E.S.

    Published in Current applied physics (01-05-2017)
    “…Highly ordered Copper Oxide (Cu2O) nanopillars were successfully grown inside the porous anodized alumina (AAO) template by electrodeposition technique. To…”
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    Journal Article
  13. 13

    Single crystal flake parameters of MoS 2 and MoSe 2 exfoliated using anodic bonding technique and its potential in rapid prototyping by Malavika, C, Roshini, R Anu, Surya Kanthi, R S, Kannan, E S

    Published in Journal of physics communications (01-10-2020)
    “…Rapid prototyping of devices using exfoliated Molybednum di-Sulphide (MoS 2 ) and Molybdenum di-Selenide (MoSe 2 ) requires an experimental protocol for…”
    Get full text
    Journal Article
  14. 14

    Capacitance-voltage and current-voltage characteristics of graphite oxide thin films patterned by ultraviolet photolithography by Lee, In-yeal, Kannan, E. S., Kim, Gil-Ho

    Published in Applied physics letters (28-12-2009)
    “…Electrical characteristics of graphite oxide (GO) thin films deposited on a p-type silicon substrate were investigated to explore its potential application as…”
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    Journal Article
  15. 15

    Photovoltage induced by ratchet effect in Si/SiGe heterostructures under microwave irradiation by Kannan, E. S., Bisotto, I., Portal, J.-C., Murali, R., Beck, T. J.

    Published in Applied physics letters (09-05-2011)
    “…Directed electron transport induced by polarized microwave in Si/SiGe heterostructure is investigated by patterning an array of semicircular antidots in…”
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    Journal Article
  16. 16

    Memory characteristics of InAs quantum dots embedded in GaAsquantum well by Kannan, E. S., Kim, Gil-Ho, Ritchie, D. A.

    Published in Applied physics letters (09-10-2009)
    “…The memory characteristics of InAs based quantum dot (QD) memory devices has been investigated by carrying out capacitance-voltage and current-voltage…”
    Get full text
    Journal Article
  17. 17

    Short range scattering effect of InAs quantum dots in the transport properties of two dimensional electron gas by Kannan, E. S., Kim, Gil-Ho, Kumar, Sanjeev, Farrer, I., Ritchie, D. A., Son, Jun Ho, Baik, Jeong Min, Lee, Jong-Lam, Youn, D. H., Kang, Kwang-Yong

    Published in Applied physics letters (09-04-2007)
    “…Short range interaction between two dimensional electron gas (2DEG) and InAs quantum dots embedded in the Ga As ∕ Al Ga As quantum well is investigated as a…”
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    Journal Article
  18. 18