Search Results - "Kanjolia, Ravindra K."

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  1. 1

    Rapid Wafer-Scale Growth of Polycrystalline 2H-MoS2 by Pulsed Metal–Organic Chemical Vapor Deposition by Kalanyan, Berc, Kimes, William A, Beams, Ryan, Stranick, Stephan J, Garratt, Elias, Kalish, Irina, Davydov, Albert V, Kanjolia, Ravindra K, Maslar, James E

    Published in Chemistry of materials (08-08-2017)
    “…High-volume manufacturing of devices based on transition metal dichalcogenide (TMD) ultrathin films will require deposition techniques that are capable of…”
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  2. 2

    Indium Oxide Thin Films by Atomic Layer Deposition Using Trimethylindium and Ozone by Mane, Anil U, Allen, Amy J, Kanjolia, Ravindra K, Elam, Jeffrey W

    Published in Journal of physical chemistry. C (12-05-2016)
    “…We investigated the atomic layer deposition (ALD) of indium oxide (In2O3) thin films using alternating exposures of trimethylindium (TMIn) and a variety of…”
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  3. 3

    Atomic Layer Deposition of Cobalt Silicide Thin Films Studied by in Situ Infrared Spectroscopy by Bernal-Ramos, Karla, Saly, Mark J, Kanjolia, Ravindra K, Chabal, Yves J

    Published in Chemistry of materials (28-07-2015)
    “…Atomic layer deposition of cobalt silicide (CoSi2) thin films on H-terminated Si(111) surfaces, using the cobalt-based precursor…”
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  4. 4

    Semiconductor-to-metal transition in atomic layer deposition (ALD) of VO2 films using VCl4 and water by Ganesan, Jeya Prakash, Dev, Durjoy, Krishnaprasad, Adithi, Feit, Corbin, Moser, Daniel, Kanjolia, Ravindra K., Roy, Tania, Banerjee, Parag

    Published in Applied physics letters (28-06-2021)
    “…The semiconductor-to-metal transition of vanadium dioxide (VO2) films is studied using temperature-dependent Raman, optical, and electrical measurements. The…”
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  5. 5

    Self-Catalyzed, Low-Temperature Atomic Layer Deposition of Ruthenium Metal Using Zero-Valent Ru(DMBD)(CO)3 and Water by Gao, Zhengning, Le, Duy, Khaniya, Asim, Dezelah, Charles L, Woodruff, Jacob, Kanjolia, Ravindra K, Kaden, William E, Rahman, Talat S, Banerjee, Parag

    Published in Chemistry of materials (26-02-2019)
    “…Ruthenium (Ru) films are deposited using atomic layer deposition (ALD), promoted by a self-catalytic reaction mechanism. Using zero-valent,…”
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  6. 6

    Role of Initial Precursor Chemisorption on Incubation Delay for Molybdenum Oxide Atomic Layer Deposition by Nanayakkara, Charith E, Vega, Abraham, Liu, Guo, Dezelah, Charles L, Kanjolia, Ravindra K, Chabal, Yves J

    Published in Chemistry of materials (13-12-2016)
    “…In an effort to grow metal oxide films (e.g., MoO3) at low temperatures, a novel molybdenum precursor, Si­(CH3)3CpMo­(CO)2(η3-2-methylallyl) or MOTSMA, is used…”
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  7. 7

    Substrate Selectivity of (tBu-Allyl)Co(CO)3 during Thermal Atomic Layer Deposition of Cobalt by Kwon, Jinhee, Saly, Mark, Halls, Mathew D, Kanjolia, Ravindra K, Chabal, Yves J

    Published in Chemistry of materials (27-03-2012)
    “…Tertbutylallylcobalttricarbonyl (tBu-AllylCo­(CO)3) is shown to have strong substrate selectivity during atomic layer deposition of metallic cobalt. The…”
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  8. 8

    Characterization of bubbler performance for low-volatility liquid precursor delivery by Maslar, James E., Kimes, William A., Sperling, Brent A., Kanjolia, Ravindra K.

    “…The performance of a bubbler to deliver the low-volatility, liquid cobalt precursor μ2-η2-(tBu-acetylene) dicobalthexacarbonyl (CCTBA) for reduced-pressure…”
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  9. 9

    Selective Atomic Layer Deposition Mechanism for Titanium Dioxide Films with (EtCp)Ti(NMe2)3: Ozone versus Water by Klesko, Joseph P, Rahman, Rezwanur, Dangerfield, Aaron, Nanayakkara, Charith E, L’Esperance, Thomas, Moser, Daniel F, Peña, L. Fabián, Mattson, Eric C, Dezelah, Charles L, Kanjolia, Ravindra K, Chabal, Yves J

    Published in Chemistry of materials (13-02-2018)
    “…The need for the conformal deposition of TiO2 thin films in device fabrication has motivated a search for thermally robust titania precursors with noncorrosive…”
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  10. 10

    Nondispersive Infrared Gas Analyzer for Vapor Density Measurements of a Carbonyl-Containing Organometallic Cobalt Precursor by Maslar, James E., Kimes, William A., Sperling, Brent A., Kanjolia, Ravindra K.

    Published in Applied spectroscopy (01-12-2017)
    “…A nondispersive infrared (NDIR) gas analyzer was demonstrated for measuring the vapor-phase density of the carbonyl-containing organometallic cobalt precurso…”
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  11. 11

    MoS2 thin films from a (NtBu)2(NMe2)2Mo and 1-propanethiol atomic layer deposition process by Kalanyan, Berc, Beams, Ryan, Katz, Michael B., Davydov, Albert V., Maslar, James E., Kanjolia, Ravindra K.

    “…Potential commercial applications for transition metal dichalcogenide (TMD) semiconductors such as MoS2 rely on unique material properties that are only…”
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  12. 12

    Reaction Mechanisms of the Atomic Layer Deposition of Tin Oxide Thin Films Using Tributyltin Ethoxide and Ozone by Nanayakkara, Charith E, Liu, Guo, Vega, Abraham, Dezelah, Charles L, Kanjolia, Ravindra K, Chabal, Yves J

    Published in Langmuir (20-06-2017)
    “…Uniform and conformal deposition of tin oxide thin films is important for several applications in electronics, gas sensing, and transparent conducting…”
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  13. 13

    Rapid Wafer-Scale Growth of Polycrystalline 2H-MoS2 by Pulsed Metalorganic Chemical Vapor Deposition by Kalanyan, Berc, Kimes, William A, Beams, Ryan, Stranick, Stephan J, Garratt, Elias, Kalish, Irina, Davydov, Albert V, Kanjolia, Ravindra K, Maslar, James E

    Published in Chemistry of materials (08-08-2017)
    “…High volume manufacturing of devices based on transition metal dichalcogenide (TMD) ultra-thin films will require deposition techniques that are capable of…”
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    Journal Article
  14. 14

    Reductive Elimination of Hypersilyl Halides from Zinc(II) Complexes. Implications for Electropositive Metal Thin Film Growth by Sirimanne, Chatu T, Kerrigan, Marissa M, Martin, Philip D, Kanjolia, Ravindra K, Elliott, Simon D, Winter, Charles H

    Published in Inorganic chemistry (05-01-2015)
    “…Treatment of Zn(Si(SiMe3)3)2 with ZnX2 (X = Cl, Br, I) in tetrahydrofuran (THF) at 23 °C afforded [Zn(Si(SiMe3)3)X(THF)]2 in 83–99% yield. X-ray crystal…”
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  15. 15

    Comparison of saturator designs for delivery of low-volatility liquid precursors by Maslar, James E., Kimes, William A., Khromchenko, Vladimir B., Sperling, Brent A., Kanjolia, Ravindra K.

    Published in Journal of crystal growth (01-04-2023)
    “…•Saturator designs were compared for delivery of low-volatility precursors.•The performance of a bubbler and flow over vessel were characterized.•Mass…”
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  16. 16
  17. 17

    Synthesis of Micron-Sized WS2 Crystallites Using Atomic Layer Deposition and Sulfur Annealing by Mullapudi, Kamesh, Addou, Rafik, Dezelah, Charles. L., Moser, Daniel F., Kanjolia, Ravindra K., Woodruff, Jacob H., Conley, John. F.

    Published in Chemistry of materials (27-06-2023)
    “…The synthesis of micron-sized WS2 crystallites via atomic layer deposition (ALD) is reported for the first time using…”
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  18. 18

    Nondispersive Infrared Gas Analyzer for Partial Pressure Measurements of a Tantalum Alkylamide During Vapor Deposition Processes by Maslar, James E., Kimes, William A., Sperling, Brent A., Kanjolia, Ravindra K.

    Published in Applied spectroscopy (01-10-2020)
    “…A nondispersive infrared gas analyzer was demonstrated for investigating metal alkylamide precursor delivery for microelectronics vapor deposition processes…”
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  19. 19

    Characterization of vapor draw vessel performance for low-volatility solid precursor delivery by Maslar, James E., Kimes, William A., Sperling, Brent A., Kanjolia, Ravindra K.

    “…Low volatility precursors are widely utilized in chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes. Compared to gases and high…”
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  20. 20

    Plasma-enhanced atomic layer deposition of WO3-SiO2 films using a heteronuclear precursor by Mullapudi, Kamesh, Holden, Konner E. K., Peterson, Jessica L., Dezelah, Charles L., Moser, Daniel F., Kanjolia, Ravindra K., Tweet, Douglas J., Conley, John F.

    “…Tungsten oxide–silicon dioxide (WOx–SiOy) composite thin films were deposited for the first time via the remote oxygen plasma-enhanced atomic layer deposition…”
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