Search Results - "Kanjolia, Ravindra K."
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Rapid Wafer-Scale Growth of Polycrystalline 2H-MoS2 by Pulsed Metal–Organic Chemical Vapor Deposition
Published in Chemistry of materials (08-08-2017)“…High-volume manufacturing of devices based on transition metal dichalcogenide (TMD) ultrathin films will require deposition techniques that are capable of…”
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Indium Oxide Thin Films by Atomic Layer Deposition Using Trimethylindium and Ozone
Published in Journal of physical chemistry. C (12-05-2016)“…We investigated the atomic layer deposition (ALD) of indium oxide (In2O3) thin films using alternating exposures of trimethylindium (TMIn) and a variety of…”
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Atomic Layer Deposition of Cobalt Silicide Thin Films Studied by in Situ Infrared Spectroscopy
Published in Chemistry of materials (28-07-2015)“…Atomic layer deposition of cobalt silicide (CoSi2) thin films on H-terminated Si(111) surfaces, using the cobalt-based precursor…”
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4
Semiconductor-to-metal transition in atomic layer deposition (ALD) of VO2 films using VCl4 and water
Published in Applied physics letters (28-06-2021)“…The semiconductor-to-metal transition of vanadium dioxide (VO2) films is studied using temperature-dependent Raman, optical, and electrical measurements. The…”
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Self-Catalyzed, Low-Temperature Atomic Layer Deposition of Ruthenium Metal Using Zero-Valent Ru(DMBD)(CO)3 and Water
Published in Chemistry of materials (26-02-2019)“…Ruthenium (Ru) films are deposited using atomic layer deposition (ALD), promoted by a self-catalytic reaction mechanism. Using zero-valent,…”
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Role of Initial Precursor Chemisorption on Incubation Delay for Molybdenum Oxide Atomic Layer Deposition
Published in Chemistry of materials (13-12-2016)“…In an effort to grow metal oxide films (e.g., MoO3) at low temperatures, a novel molybdenum precursor, Si(CH3)3CpMo(CO)2(η3-2-methylallyl) or MOTSMA, is used…”
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Substrate Selectivity of (tBu-Allyl)Co(CO)3 during Thermal Atomic Layer Deposition of Cobalt
Published in Chemistry of materials (27-03-2012)“…Tertbutylallylcobalttricarbonyl (tBu-AllylCo(CO)3) is shown to have strong substrate selectivity during atomic layer deposition of metallic cobalt. The…”
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8
Characterization of bubbler performance for low-volatility liquid precursor delivery
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-07-2019)“…The performance of a bubbler to deliver the low-volatility, liquid cobalt precursor μ2-η2-(tBu-acetylene) dicobalthexacarbonyl (CCTBA) for reduced-pressure…”
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9
Selective Atomic Layer Deposition Mechanism for Titanium Dioxide Films with (EtCp)Ti(NMe2)3: Ozone versus Water
Published in Chemistry of materials (13-02-2018)“…The need for the conformal deposition of TiO2 thin films in device fabrication has motivated a search for thermally robust titania precursors with noncorrosive…”
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Nondispersive Infrared Gas Analyzer for Vapor Density Measurements of a Carbonyl-Containing Organometallic Cobalt Precursor
Published in Applied spectroscopy (01-12-2017)“…A nondispersive infrared (NDIR) gas analyzer was demonstrated for measuring the vapor-phase density of the carbonyl-containing organometallic cobalt precurso…”
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11
MoS2 thin films from a (NtBu)2(NMe2)2Mo and 1-propanethiol atomic layer deposition process
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-01-2019)“…Potential commercial applications for transition metal dichalcogenide (TMD) semiconductors such as MoS2 rely on unique material properties that are only…”
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12
Reaction Mechanisms of the Atomic Layer Deposition of Tin Oxide Thin Films Using Tributyltin Ethoxide and Ozone
Published in Langmuir (20-06-2017)“…Uniform and conformal deposition of tin oxide thin films is important for several applications in electronics, gas sensing, and transparent conducting…”
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13
Rapid Wafer-Scale Growth of Polycrystalline 2H-MoS2 by Pulsed Metalorganic Chemical Vapor Deposition
Published in Chemistry of materials (08-08-2017)“…High volume manufacturing of devices based on transition metal dichalcogenide (TMD) ultra-thin films will require deposition techniques that are capable of…”
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14
Reductive Elimination of Hypersilyl Halides from Zinc(II) Complexes. Implications for Electropositive Metal Thin Film Growth
Published in Inorganic chemistry (05-01-2015)“…Treatment of Zn(Si(SiMe3)3)2 with ZnX2 (X = Cl, Br, I) in tetrahydrofuran (THF) at 23 °C afforded [Zn(Si(SiMe3)3)X(THF)]2 in 83–99% yield. X-ray crystal…”
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15
Comparison of saturator designs for delivery of low-volatility liquid precursors
Published in Journal of crystal growth (01-04-2023)“…•Saturator designs were compared for delivery of low-volatility precursors.•The performance of a bubbler and flow over vessel were characterized.•Mass…”
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Synthesis of Micron-Sized WS 2 Crystallites Using Atomic Layer Deposition and Sulfur Annealing
Published in Chemistry of materials (27-06-2023)Get full text
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Synthesis of Micron-Sized WS2 Crystallites Using Atomic Layer Deposition and Sulfur Annealing
Published in Chemistry of materials (27-06-2023)“…The synthesis of micron-sized WS2 crystallites via atomic layer deposition (ALD) is reported for the first time using…”
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Nondispersive Infrared Gas Analyzer for Partial Pressure Measurements of a Tantalum Alkylamide During Vapor Deposition Processes
Published in Applied spectroscopy (01-10-2020)“…A nondispersive infrared gas analyzer was demonstrated for investigating metal alkylamide precursor delivery for microelectronics vapor deposition processes…”
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Characterization of vapor draw vessel performance for low-volatility solid precursor delivery
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-01-2021)“…Low volatility precursors are widely utilized in chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes. Compared to gases and high…”
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20
Plasma-enhanced atomic layer deposition of WO3-SiO2 films using a heteronuclear precursor
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-01-2023)“…Tungsten oxide–silicon dioxide (WOx–SiOy) composite thin films were deposited for the first time via the remote oxygen plasma-enhanced atomic layer deposition…”
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