Search Results - "Kang, Sungchil"

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  1. 1

    Etching characteristics and mechanisms of SiC thin films in inductively-coupled HBr-Ar, N2, O2 plasmas by Efremov, Alexander, Kang, Sungchil, Kwon, Kwang-Ho, Seok Choi, Won

    “…Etch characteristics and mechanisms of SiC thin films in HBr-Ar, HBr-N2, and HBr-O2 inductively-coupled plasmas were studied using a combination of…”
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    Journal Article
  2. 2

    Etching Behavior and Mechanism of In- and Ga-Doped ZnO Thin Films in Inductively Coupled BCl3/Cl2/Ar Plasmas by Kwon, Kwang-Ho, Efremov, Alexander, Kang, Sungchil, Jang, Hanbyeol, Yang, Hyungjin, Kim, Kwangsoo

    Published in Jpn J Appl Phys (01-07-2012)
    “…The etching characteristics and mechanism of In- and Ga-doped ZnO (IGZO) thin films in BCl 3 /Cl 2 /Ar inductively coupled plasma at a fixed gas pressure (6…”
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    Journal Article
  3. 3

    Etching Characteristics and Mechanisms of Mo and Al2O3 Thin Films in O2/Cl2/Ar Inductively Coupled Plasmas: Effect of Gas Mixing Ratios by Kang, Sungchil, Efremov, Alexander, Yun, Sun Jin, Son, Jinyoung, Kwon, Kwang-Ho

    Published in Plasma chemistry and plasma processing (01-04-2013)
    “…An investigation of etching behaviors for Mo and Al 2 O 3 thin films in O 2 /Cl 2 /Ar inductively coupled plasmas at constant gas pressure (6 mTorr), input…”
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    Journal Article
  4. 4

    Etching Characteristics and Mechanisms of TiO2 Thin Films in HBr/Cl2/Ar Inductively Coupled Plasma by Kim, Daehee, Efremov, Alexander, Jang, Hanbyeol, Kang, Sungchil, Yun, Sun Jin, Kwon, Kwang-Ho

    Published in Jpn J Appl Phys (25-10-2012)
    “…The TiO 2 etching characteristics and mechanism in HBr/Cl 2 /Ar inductively coupled plasma (with a fixed bias power of 200 W) were investigated. It was found…”
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    Journal Article
  5. 5

    Etching characteristics and mechanisms of SiC thin films in inductively-coupled HBr-Ar, N 2 , O 2 plasmas by Efremov, Alexander, Kang, Sungchil, Kwon, Kwang-Ho, Seok Choi, Won

    “…Etch characteristics and mechanisms of SiC thin films in HBr-Ar, HBr-N 2 , and HBr-O 2 inductively-coupled plasmas were studied using a combination of…”
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    Journal Article
  6. 6

    Etching Behavior and Mechanism of In- and Ga-Doped ZnO Thin Films in Inductively Coupled BCl 3 /Cl 2 /Ar Plasmas by Kwon, Kwang-Ho, Efremov, Alexander, Kang, Sungchil, Jang, Hanbyeol, Yang, Hyungjin, Kim, Kwangsoo

    Published in Japanese Journal of Applied Physics (01-07-2012)
    “…The etching characteristics and mechanism of In- and Ga-doped ZnO (IGZO) thin films in BCl 3 /Cl 2 /Ar inductively coupled plasma at a fixed gas pressure (6…”
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    Journal Article
  7. 7

    Study on surface modification of silicon using CHF 3 /O 2 plasma for nano-imprint lithography by Kim, Youngkeun, Kang, Sungchil, Ham, Yong-Hyun, Kwon, Kwang-Ho, Alexandrovich Shutov, Dmitriy, Lee, Hyun-Woo, Jong Lee, Jae, Do, Lee-Mi, Baek, Kyu-Ha

    “…In this article, we report the surface modification of silicon by an inductively coupled CHF 3 /O 2 plasma treatment for demolding process in nano-imprint…”
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    Journal Article
  8. 8
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  10. 10

    Etching Characteristics and Mechanisms of TiO 2 Thin Films in HBr/Cl 2 /Ar Inductively Coupled Plasma by Kim, Daehee, Efremov, Alexander, Jang, Hanbyeol, Kang, Sungchil, Yun, Sun Jin, Kwon, Kwang-Ho

    Published in Japanese Journal of Applied Physics (01-10-2012)
    “…The TiO 2 etching characteristics and mechanism in HBr/Cl 2 /Ar inductively coupled plasma (with a fixed bias power of 200 W) were investigated. It was found…”
    Get full text
    Journal Article
  11. 11

    Etching Characteristics and Mechanisms of TiO2 Thin Films in HBr/Ar and Cl2/Ar Inductively-Coupled Plasmas by Jang, Hanbyeol, Efremov, Alexander, Kim, Daehee, Kang, Sungchil, Yun, Sun Jin, Kwon, Kwang-Ho

    Published in Plasma chemistry and plasma processing (01-04-2012)
    “…The TiO 2 etching characteristics and mechanisms in HBr/Ar and Cl 2 /Ar inductively-coupled plasmas were investigated under fixed gas-mixing ratio and bias…”
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    Journal Article
  12. 12

    Study on surface modification of silicon using CHF3/O2 plasma for nano-imprint lithography by Kim, Youngkeun, Kang, Sungchil, Ham, Yong-Hyun, Kwon, Kwang-Ho, Alexandrovich Shutov, Dmitriy, Lee, Hyun-Woo, Jong Lee, Jae, Do, Lee-Mi, Baek, Kyu-Ha

    “…In this article, we report the surface modification of silicon by an inductively coupled CHF3/O2 plasma treatment for demolding process in nano-imprint…”
    Get full text
    Journal Article
  13. 13

    Study on surface modification of silicon using CHF3/O2 plasma for nano-imprint lithographya by Kim, Youngkeun, Kang, Sungchil, Ham, Yong-Hyun, Kwon, Kwang-Ho, Alexandrovich Shutov, Dmitriy, Lee, Hyun-Woo, Jong Lee, Jae, Do, Lee-Mi, Baek, Kyu-Ha

    “…In this article, we report the surface modification of silicon by an inductively coupled CHF3/O2 plasma treatment for demolding process in nano-imprint…”
    Get full text
    Journal Article