Search Results - "Kang, Sungchil"
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Etching characteristics and mechanisms of SiC thin films in inductively-coupled HBr-Ar, N2, O2 plasmas
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-11-2011)“…Etch characteristics and mechanisms of SiC thin films in HBr-Ar, HBr-N2, and HBr-O2 inductively-coupled plasmas were studied using a combination of…”
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2
Etching Behavior and Mechanism of In- and Ga-Doped ZnO Thin Films in Inductively Coupled BCl3/Cl2/Ar Plasmas
Published in Jpn J Appl Phys (01-07-2012)“…The etching characteristics and mechanism of In- and Ga-doped ZnO (IGZO) thin films in BCl 3 /Cl 2 /Ar inductively coupled plasma at a fixed gas pressure (6…”
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3
Etching Characteristics and Mechanisms of Mo and Al2O3 Thin Films in O2/Cl2/Ar Inductively Coupled Plasmas: Effect of Gas Mixing Ratios
Published in Plasma chemistry and plasma processing (01-04-2013)“…An investigation of etching behaviors for Mo and Al 2 O 3 thin films in O 2 /Cl 2 /Ar inductively coupled plasmas at constant gas pressure (6 mTorr), input…”
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4
Etching Characteristics and Mechanisms of TiO2 Thin Films in HBr/Cl2/Ar Inductively Coupled Plasma
Published in Jpn J Appl Phys (25-10-2012)“…The TiO 2 etching characteristics and mechanism in HBr/Cl 2 /Ar inductively coupled plasma (with a fixed bias power of 200 W) were investigated. It was found…”
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5
Etching characteristics and mechanisms of SiC thin films in inductively-coupled HBr-Ar, N 2 , O 2 plasmas
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-11-2011)“…Etch characteristics and mechanisms of SiC thin films in HBr-Ar, HBr-N 2 , and HBr-O 2 inductively-coupled plasmas were studied using a combination of…”
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6
Etching Behavior and Mechanism of In- and Ga-Doped ZnO Thin Films in Inductively Coupled BCl 3 /Cl 2 /Ar Plasmas
Published in Japanese Journal of Applied Physics (01-07-2012)“…The etching characteristics and mechanism of In- and Ga-doped ZnO (IGZO) thin films in BCl 3 /Cl 2 /Ar inductively coupled plasma at a fixed gas pressure (6…”
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7
Study on surface modification of silicon using CHF 3 /O 2 plasma for nano-imprint lithography
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-05-2012)“…In this article, we report the surface modification of silicon by an inductively coupled CHF 3 /O 2 plasma treatment for demolding process in nano-imprint…”
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8
Etching Characteristics and Mechanisms of TiO 2 Thin Films in HBr/Cl 2 /Ar Inductively Coupled Plasma
Published in Japanese Journal of Applied Physics (01-10-2012)Get full text
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9
Etching Behavior and Mechanism of In- and Ga-Doped ZnO Thin Films in Inductively Coupled BCl 3 /Cl 2 /Ar Plasmas
Published in Japanese Journal of Applied Physics (01-07-2012)Get full text
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10
Etching Characteristics and Mechanisms of TiO 2 Thin Films in HBr/Cl 2 /Ar Inductively Coupled Plasma
Published in Japanese Journal of Applied Physics (01-10-2012)“…The TiO 2 etching characteristics and mechanism in HBr/Cl 2 /Ar inductively coupled plasma (with a fixed bias power of 200 W) were investigated. It was found…”
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11
Etching Characteristics and Mechanisms of TiO2 Thin Films in HBr/Ar and Cl2/Ar Inductively-Coupled Plasmas
Published in Plasma chemistry and plasma processing (01-04-2012)“…The TiO 2 etching characteristics and mechanisms in HBr/Ar and Cl 2 /Ar inductively-coupled plasmas were investigated under fixed gas-mixing ratio and bias…”
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12
Study on surface modification of silicon using CHF3/O2 plasma for nano-imprint lithography
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-05-2012)“…In this article, we report the surface modification of silicon by an inductively coupled CHF3/O2 plasma treatment for demolding process in nano-imprint…”
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13
Study on surface modification of silicon using CHF3/O2 plasma for nano-imprint lithographya
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-05-2012)“…In this article, we report the surface modification of silicon by an inductively coupled CHF3/O2 plasma treatment for demolding process in nano-imprint…”
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