Search Results - "Kang, Juncheol"

Laterally gated ferroelectric field effect transistor (LG-FeFET) using α-In2Se3 for stacked in-memory computing array by Park, Sangyong, Lee, Dongyoung, Kang, Juncheol, Choi, Hojin, Park, Jin-Hong

“…In-memory computing is an attractive alternative for handling data-intensive tasks as it employs parallel processing without the need for data transfer…”
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A Van Der Waals Reconfigurable Multi‐Valued Logic Device and Circuit Based on Tunable Negative‐Differential‐Resistance Phenomenon by Seo, Seunghwan, Cho, Jeong‐Ick, Jung, Kil‐Su, Andreev, Maksim, Lee, Ju‐Hee, Ahn, Hogeun, Jung, Sooyoung, Lee, Taeran, Kim, Byeongchan, Lee, Seojoo, Kang, Juncheol, Lee, Kyeong‐Bae, Lee, Ho‐Jun, Kim, Ki Seok, Yeom, Geun Young, Heo, Keun, Park, Jin‐Hong

“…Multi‐valued logic (MVL) technology that utilizes more than two logic states has recently been reconsidered because of the demand for greater power saving in…”
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Junctionless Negative‐Differential‐Resistance Device Using 2D Van‐Der‐Waals Layered Materials for Ternary Parallel Computing by Lee, Taeran, Jung, Kil‐Su, Seo, Seunghwan, Lee, Junseo, Park, Jihye, Kang, Sumin, Park, Jeongwon, Kang, Juncheol, Ahn, Hogeun, Kim, Suhyun, Lee, Hae Won, Lee, Doyoon, Kim, Ki Seok, Kim, Hyunseok, Heo, Keun, Kim, Sunmean, Bae, Sang‐Hoon, Kang, Seokhyeong, Kang, Kibum, Kim, Jeehwan, Park, Jin‐Hong

“…Negative‐differential‐resistance (NDR) devices offer a promising pathway for developing future computing technologies characterized by exceptionally low energy…”
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A Van Der Waals Reconfigurable Multi‐Valued Logic Device and Circuit Based on Tunable Negative‐Differential‐Resistance Phenomenon (Adv. Mater. 36/2022) by Seo, Seunghwan, Cho, Jeong‐Ick, Jung, Kil‐Su, Andreev, Maksim, Lee, Ju‐Hee, Ahn, Hogeun, Jung, Sooyoung, Lee, Taeran, Kim, Byeongchan, Lee, Seojoo, Kang, Juncheol, Lee, Kyeong‐Bae, Lee, Ho‐Jun, Kim, Ki Seok, Yeom, Geun Young, Heo, Keun, Park, Jin‐Hong

“…Negative Differential Resistance In article number 2202799, a reconfigurable, multiple negative differential resistance (m‐NDR) device, which features…”
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WSe2 Field-effect Transistor with Electron-beam-induced W-shaped IV Characteristic and its Application to a Ternary NAND Gate by Andreev, Maksim, Kang, Juncheol, Lee, Taeran, Park, Jin-Hong

“…We report WSe 2 homojunction-based field-effect transistors (FETs) with W-shaped transfer IV characteristics, enabled by area-selective tailoring of the WSe 2…”
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