Search Results - "Kang, In Ho"

A New Feature Selection Method for One-Class Classification Problems by JEONG, Young-Seon, KANG, In-Ho, JEONG, Myong-Kee, KONG, Dongjoon

“…Feature selection is a data processing method that is used to select a few important features among many input features and to remove any irrelevant one…”
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Role of the oxidizing agent in the etching of 4H-SiC substrates with molten KOH by Na, Moonkyong, Kang, In Ho, Moon, Jeong Hyun, Bahng, Wook

“…A novel etching solution using molten potassium hydroxide (KOH) for the identification of dislocation types in a silicon-carbide (SiC) epilayer is identified…”
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Field-plate engineering for high breakdown voltage β-Ga2O3 nanolayer field-effect transistors by Bae, Jinho, Hyoung Woo Kim, In Ho Kang, Kim, Jihyun

“…The narrow voltage swing of a nanoelectronic device limits its implementations in electronic circuits. Nanolayer β-Ga2O3 has a superior breakdown field of…”
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Fabrication of a 600-V/20-A 4H-SiC schottky barrier diode by Kang, In-Ho, Kim, Sang-Cheol, Moon, Jung-Hyeon, Bahng, Wook, Kim, Nam-Kyun

“…In this study, 600-V/20-A 4H-SiC Schottky barrier diodes (SBDs) were fabricated to investigate the effect of key processing steps, especially before and after…”
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Improved reverse current-voltage characteristics of a 4H-SiC PiN diode by bias-enhanced reduction of surface damage by Kang, In-Ho, Bahng, Wook, Moon, Jeong-Hyun, Yun, Seung-Bok

“…This paper introduces a phenomenon in which the leakage current of a 4H-SiC PiN diode was dramatically reduced without destruction during a bias stress. The…”
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Effects of wet-oxidized 4H-SiC annealed in HNO3/H2O vapour by Poobalan, Banu, Hyun Moon, Jeong, Kim, Sang-Cheol, Joo, Sung-Jae, Bahng, Wook, Ho Kang, In, Kim, Nam-Kyun, Yew Cheong, Kuan

“…Purpose – The high density of defects mainly attributed to the presence of silicon oxycarbides, residual C clusters, Si- and C-dangling bonds at or near the…”
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Effects of trench profile and self-aligned ion implantation on electrical characteristics of 1.2 kV 4H-SiC trench MOSFETs using bottom protection p-well by Seok, Ogyun, Ha, Min-Woo, Kang, In Ho, Kim, Hyoung Woo, Kim, Dong Young, Bahng, Wook

“…The effects of a trench profile and self-aligned ion implantation on the electrical characteristics of 1.2 kV 4H-SiC trench MOSFETs employing a bottom…”
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A comparative study on the initial stability of different implants placed above the bone level using resonance frequency analysis by Kang, In-Ho, Kim, Chang-Whe, Lim, Young-Jun, Kim, Myung-Joo

“…PURPOSE. This study evaluated the initial stability of different implants placed above the bone level in different types of bone. MATERIALS AND METHODS. As…”
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Effect of surface passivation on breakdown voltages of 4H-SiC Schottky barrier diodes by Kang, In Ho, Na, Moon Kyong, Seok, Ogyun, Moon, Jeong Hyun, Kim, H. W., Kim, Sang Cheol, Bahng, Wook, Kim, Nam Kyun, Park, Him-Chan, Yang, Chang Heon

“…In this paper, the effect of surface passivation on the breakdown voltage of 4H-SiC Schottky barrier diode (SBD) was investigated. The SBDs having various…”
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Enhanced field-emission capacity by density control of a CNT cathode using post-plasma treatment by Choi, Haeyoung, Ji Shin, Yun, Il Cha, Seung, Ho Kang, In, Bahng, Wook

“…The effects of hydrogen plasma treatment on surface morphologies and field emission performance of vertically aligned multi-walled carbon nanotubes were…”
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Fabrication of a 1.7-kV Schottky barrier diode with improved forward current-voltage characteristics by Kang, In Ho, Na, Moon Kyong, Seok, Ogyun, Moon, Jeong Hyun, Bahng, Wook, Park, Him-Chan, Yang, Chang Heon

“…This paper presents the effects of thermal annealing performed at different temperatures on the forward current-voltage (I-V) characteristics to fabricate a…”
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Correlation between reverse characteristics and structural defects in 4H-SiC PiN diode by Yun, Seung Bok, Bahng, Wook, Kang, In-Ho, Shin, Yun Ji, Han, Sang Bo

“…We fabricated 4H-SiC PiN diodes to analyze the correlation between the reverse characteristics, including current-voltage and failure characteristics, and…”
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Erratum to: Journal of the Korean Physical Society, Vol. 71, No. 10 by Shin, Dong Hee, Heo, Jin Hyuck, Im, Sang Hyuk, Lee, Rena, Kim, Kyubo, Cho, Samju, Lim, Sangwook, Lee, Suk, Shim, Jang Bo, Huh, Hyun Do, Lee, Sang Hoon, Ahn, Sohyun, Nobi, Ashadun, Lee, Jae Woo, Lim, Hyunwoo, Lee, Hunwoo, Cho, Hyosung, Seo, Changwoo, Je, Uikyu, Park, Chulkyu, Kim, Kyuseok, Kim, Guna, Park, Soyoung, Lee, Dongyeon, Kang, Seokyoon, Lee, Minsik, Cao, Jingtai, Zhao, Xiaohui, Li, Zhaokun, Liu, Wei, Gu, Haijun, Kang, In Ho, Na, Moon Kyong, Seok, Ogyun, Moon, Jeong Hyun, Kim, H. W., Kim, Sang Cheol, Bahng, Wook, Kim, Nam Kyun, Park, Him-Chan, Yang, Chang Heon, Kim, Kyungil, Kim, Youngman, Lee, Kang Seog, Hong, Yoo-Seung, Cho, Chun-Hyung, Sung, Hyuk-Kee, Hyun, June-Won, Kim, Gang Bae, Lee, Ju Ho, Kim, Yeon Jung, Hwang, Seungjin, Jeong, Jihoon, Cho, Seryeyohan, Lee, Jongmin, Yu, Tae Jun, Lee, Kang Il, Lee, Geon Joon, Park, Gyungsoon, Choi, Eun Ha, Kim, Dong-Hwan, Jeong, Jun-Seok, Eom, Su-Keun, Lee, Jae-Gil, Seo, Kwang-Seok, Cha, Ho-Young, Ko, Young Joon, Kim, Hyun Soo, Jung, Jong Hoon, Jeong, Inho, Song, Hyunwook, Lee, B. C., Jang, Hyunchul, Kim, Byongju, Koo, Sangmo, Park, Seran, Ko, Dae-Hong, Ahn, Kwang Jun, Cho, Sungwan, Kim, Sang Goon, Hong, Kimin, Shim, Seung-Bo, Jo, Myunglae, Cho, Sung Un, Park, Yun Daniel, Kim, Hee-Cheol, Kim, Seok

“…Regrettably, due to a technical error during the production process, there were discrepancies in DOI of the mentioned articles between HTML and PDF files. The…”
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A comparative study on the initial stability of different implants placed above the bone level using resonance frequency analysis by Kang, In-Ho, Kim, Chang-Whe, Lim, Young-Jun, Kim, Myung-Joo

“…This study evaluated the initial stability of different implants placed above the bone level in different types of bone. As described by Lekholm and Zarb,…”
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High breakdown voltage quasi-two-dimensional β-Ga2O3 field-effect transistors with a boron nitride field plate by Bae, Jinho, Kim, Hyoung Woo, Kang, In Ho, Yang, Gwangseok, Kim, Jihyun

“…We have demonstrated a β-Ga2O3 metal-semiconductor field-effect transistor (MESFET) with a high off-state breakdown voltage (344 V), based on a…”
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Integration of multiple evidences based on a query type for web search by Kang, In-Ho, Kim, Gil Chang

“…The massive and heterogeneous Web exacerbates IR problems and short user queries make them worse. The contents of web pages are not enough to find answer…”
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Fabrication characteristics of 1.2kV SiC JBS diode by Sang-Cheol Kim, Wook Bahng, In-Ho Kang, Sung-Jae Joo, Nam-Kyun Kim

“…The design, process, and the DC and switching characterization of 4H-SiC junction barrier Schottky (JBS) diode from room temperature up to 200degC have been…”
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Degeneration mechanism of 30 MeV and 100 MeV proton irradiation effects on 1.2 kV SiC MOSFETs by Seo, Jae Hwa, Kim, Young Jo, Kang, In Ho, Moon, Jeong Hyun, Kim, Yu-Mi, Yoon, Young Jun, Kim, Hyoung Woo

“…In this study, we evaluated and characterized the effects of various proton irradiation energies and fluences on the electrical characteristics of SiC MOSFETs…”
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Field-plate engineering for high breakdown voltage β-Ga 2 O 3 nanolayer field-effect transistors by Bae, Jinho, Kim, Hyoung Woo, Kang, In Ho, Kim, Jihyun

“…The narrow voltage swing of a nanoelectronic device limits its implementations in electronic circuits. Nanolayer β-Ga O has a superior breakdown field of…”
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Selectively hydrogen-pretreated AlGaAs/InGaAs p-HEMTs and their application to an enhancement/depletion-mode HEMT by Kang, In-Ho, Kim, Jung-Hoon, Kim, Won-Bae, Song, Jong-In

“…DC, RF, and low-frequency noise characteristics of selectively hydrogen-pretreated Al 0.24Ga 0.76As/In 0.2Ga 0.8As double heterostructure pseudomorphic high…”
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