Search Results - "Kanechika, Masakazu"

Identification of type of threading dislocation causing reverse leakage in GaN p–n junctions after continuous forward current stress by Narita, Tetsuo, Kanechika, Masakazu, Kojima, Jun, Watanabe, Hiroki, Kondo, Takeshi, Uesugi, Tsutomu, Yamaguchi, Satoshi, Kimoto, Yasuji, Tomita, Kazuyoshi, Nagasato, Yoshitaka, Ikeda, Satoshi, Kosaki, Masayoshi, Oka, Tohru, Suda, Jun

“…Power devices are operated under harsh conditions, such as high currents and voltages, and so degradation of these devices is an important issue. Our group…”
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Improvement of AlSiO/GaN interface by a novel post deposition annealing using ultra high pressure by Kanechika, Masakazu, Hirata, Takumi, Tokozumi, Tomoya, Kachi, Tetsu, Suda, Jun

“…In this study, a novel post-deposition annealing (PDA) technique employing ultra-high pressure was demonstrated for the first time. A 40 nm thick AlSiO gate…”
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Franz-Keldysh effect in GaN p-n junction diode under high reverse bias voltage by Maeda, Takuya, Narita, Tetsuo, Kanechika, Masakazu, Uesugi, Tsutomu, Kachi, Tetsu, Kimoto, Tsunenobu, Horita, Masahiro, Suda, Jun

“…Photocurrent induced by sub-bandgap light absorption due to the Franz-Keldysh effect was observed in GaN p-n junction diodes under a high reverse bias voltage…”
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Effects of proton irradiation-induced point defects on Shockley–Read–Hall recombination lifetimes in homoepitaxial GaN p–n junctions by Narita, Tetsuo, Kanechika, Masakazu, Tomita, Kazuyoshi, Nagasato, Yoshitaka, Kondo, Takeshi, Uesugi, Tsutomu, Ikeda, Satoshi, Kosaki, Masayoshi, Oka, Tohru, Suda, Jun

“…This work examined the intentional generation of recombination centers in GaN p–n junctions on freestanding GaN substrates. Irradiation with a 4.2 MeV proton…”
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Measurement of avalanche multiplication utilizing Franz-Keldysh effect in GaN p-n junction diodes with double-side-depleted shallow bevel termination by Maeda, Takuya, Narita, Tetsuo, Ueda, Hiroyuki, Kanechika, Masakazu, Uesugi, Tsutomu, Kachi, Tetsu, Kimoto, Tsunenobu, Horita, Masahiro, Suda, Jun

“…Avalanche multiplication characteristics of GaN p-n junction diodes (PNDs) with double-side-depleted shallow bevel termination, which exhibit nearly ideal…”
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Increase of reverse leakage current at homoepitaxial GaN p-n junctions induced by continuous forward current stress by Narita, Tetsuo, Nagasato, Yoshitaka, Kanechika, Masakazu, Kondo, Takeshi, Uesugi, Tsutomu, Tomita, Kazuyoshi, Ikeda, Satoshi, Yamaguchi, Satoshi, Kimoto, Yasuji, Kosaki, Masayoshi, Oka, Tohru, Kojima, Jun, Suda, Jun

“…Reliability tests involving the application of high electrical stresses were employed to assess GaN-based vertical p-n junctions fabricated on freestanding GaN…”
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Evaluation of dislocations under the electrodes of GaN pn diodes by X-ray topography by Kanechika, Masakazu, Yamaguchi, Satoshi, Imanishi, Masayuki, Mori, Yusuke

“…We have successfully obtained the clear images of the dislocation mapping even under the electrodes of the GaN vertical pn diodes by reflection X-ray…”
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Shockley-Read-Hall lifetime in homoepitaxial p-GaN extracted from recombination current in GaN p-n+ junction diodes by Maeda, Takuya, Narita, Tetsuo, Ueda, Hiroyuki, Kanechika, Masakazu, Uesugi, Tsutomu, Kachi, Tetsu, Kimoto, Tsunenobu, Horita, Masahiro, Suda, Jun

“…The Shockley-Read-Hall (SRH) lifetime in homoepitaxial p-GaN (Na = 1 × 1017 cm−3) is investigated by analyzing forward current-voltage (I-V) characteristics in…”
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Positron annihilation and cathodoluminescence study on inductively coupled plasma etched GaN by Kataoka, Keita, Kanechika, Masakazu, Narita, Tetsuo, Kimoto, Yasuji, Uedono, Akira

“…Etching damage induced by inductively coupled plasma (ICP) with a mixture of Cl2 and BCl3 gases and the effect of subsequent annealing in N2were studied…”
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A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor by Kanechika, Masakazu, Sugimoto, Masahiro, Soejima, Narumasa, Ueda, Hiroyuki, Ishiguro, Osamu, Kodama, Masahito, Hayashi, Eiko, Itoh, Kenji, Uesugi, Tsutomu, Kachi, Tetsu

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Improvement of Current Collapse by Surface Treatment and Passivation Layer in p-GaN Gate GaN High-Electron-Mobility Transistors by Katsuno, Takashi, Kanechika, Masakazu, Itoh, Kenji, Nishikawa, Koichi, Uesugi, Tsutomu, Kachi, Tetsu

“…The improvement of current collapses of p-GaN gate GaN high-electron-mobility transistors (HEMTs) caused by the effects of surface treatment and the…”
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Estimation of Impact Ionization Coefficient in GaN by Photomulitiplication Measurement Utilizing Franz-Keldysh Effect by Maeda, Takuya, Narita, Tetsuo, Ueda, Hiroyuki, Kanechika, Masakazu, Uesugi, Tsutomu, Kachi, Tetsu, Kimoto, Tsunenobu, Horita, Masahiro, Suda, Jun

“…A valanche multiplication characteristics in GaN p-n junction diodes (PNDs) under high reverse bias conditions were investigated. The GaN-on-GaN PNDs with…”
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n -type AlN layer by Si ion implantation by Kanechika, Masakazu, Kachi, Tetsu

“…n -type AlN layer was obtained by Si ion implantation and the subsequent activation annealing. Si ions were implanted to an unintentionally doped AlN layer…”
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Characterization of Ar ion etching induced damage for GaN by Kataoka, Keita, Kimoto, Yasuji, Horibuchi, Kayo, Nonaka, Takamasa, Takahashi, Naoko, Narita, Tetsuo, Kanechika, Masakazu, Dohmae, Kazuhiko

“…We studied the overall picture of the etching‐induced damage for GaN films. By using Ar ion etching, we characterized the damage for GaN from various…”
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Design and Fabrication of GaN p-n Junction Diodes With Negative Beveled-Mesa Termination by Maeda, Takuya, Narita, Tetsuo, Ueda, Hiroyuki, Kanechika, Masakazu, Uesugi, Tsutomu, Kachi, Tetsu, Kimoto, Tsunenobu, Horita, Masahiro, Suda, Jun

“…We report on homoepitaxial GaN p-n junction diodes with a negative beveled-mesa termination. The electric field distribution in a beveled-mesa was investigated…”
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Dependence of Tip Depth of Silicon Needles on Fabrication Process Conditions by Kanechika, Masakazu, Mitsushima, Yasuichi

“…We previously developed a process for fabricating needle-shaped silicons (silicon needles) with a small tip radius and a high aspect ratio. They can be…”
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A High Channel Mobility and a Normally‐off Operation of a Vertical GaN Metal‐Oxide‐Semiconductor Field‐Effect Transistors using an AlSiO/AlN Gate Stack Structure on m‐plane Trench Sidewall by Kanechika, Masakazu, Ito, Kenji, Narita, Tetsuo, Tomita, Kazuyoshi, Iwasaki, Shiro, Kikuta, Daigo, Kachi, Tetsu

“…An AlSiO/AlN‐interlayer gate stack formed on c‐plane GaN metal‐oxide‐semiconductor (MOS) devices was previously developed to enhance the interface of the gate…”
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Engineered interface charges and traps in GaN metal-oxide-semiconductor field-effect transistors providing high channel mobility and E -mode operation by Narita, Tetsuo, Ito, Kenji, Iguchi, Hiroko, Kikuta, Daigo, Kanechika, Masakazu, Tomita, Kazuyoshi, Iwasaki, Shiro, Kataoka, Keita, Kano, Emi, Ikarashi, Nobuyuki, Horita, Masahiro, Suda, Jun, Kachi, Tetsu

“…This review focuses on controlling interface charges and traps to obtain minimal channel resistance and stable enhancement-mode operation in GaN…”
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A Gated Field Emission Triode Using Silicon Needles Fabricated by Highly Selective Anisotropic Dry Etching by Kanechika, Masakazu, Sugimoto, Noriaki, Mitsushima, Yasuichi

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Reliability issues of gate oxides and p-n junctions for vertical GaN metal-oxide-semiconductor field-effect transistors (Invited) by Narita, Tetsuo, Kikuta, Daigo, Ito, Kenji, Shoji, Tomoyuki, Mori, Tomohiko, Yamaguchi, Satoshi, Kimoto, Yasuji, Tomita, Kazuyoshi, Kanechika, Masakazu, Kondo, Takeshi, Uesugi, Tsutomu, Kojima, Jun, Suda, Jun, Nagasato, Yoshitaka, Ikeda, Satoshi, Watanabe, Hiroki, Kosaki, Masayoshi, Oka, Tohru

“…We focus on reliability issues of gate oxides and p-n junctions to realize vertical GaN metal-oxide-semiconductor field-effect transistors (MOSFETs). An…”
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