STM Study on Initial Te Adsorption on Si(111) 7 × 7 Surface

The initial adsorption process of Te on Si(111) 7 × 7 surface at elevated temperatures was observed using STM. Te atoms form clusters. However the adsorption site changes with the substrate temperature. The oval clusters sits in between the faulted and unfaulted halves at around 300°C, and the prefe...

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Bibliographic Details
Published in:E-journal of surface science and nanotechnology Vol. 4; pp. 406 - 409
Main Authors: Kanai, Yukari, Yasue, Tsuneo, Koshikawa, Takanori
Format: Journal Article
Language:English
Published: The Japan Society of Vacuum and Surface Science 2006
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Summary:The initial adsorption process of Te on Si(111) 7 × 7 surface at elevated temperatures was observed using STM. Te atoms form clusters. However the adsorption site changes with the substrate temperature. The oval clusters sits in between the faulted and unfaulted halves at around 300°C, and the preferential adsorption at center adatoms is observed. The triangular clusters form on three adatoms in either the faulted or unfaulted halves without remarkable preference at around 500°C. [DOI:10.1380/ejssnt.2006.406]
ISSN:1348-0391
1348-0391
DOI:10.1380/ejssnt.2006.406